|
Details, datasheet, quote on part number:ZTX753DCSM
| |
| Part: | ZTX753DCSM |
| Category: | Discrete => Transistors => Bipolar |
| Description: | Screening Options Available = ;; Polarity = PNP ;; Package = LCC2 (MO-041BB) ;; Vceo = 120V ;; IC(cont) = 2A ;; HFE(min) = 100 ;; HFE(max) = 300 ;; @ Vce/ic = 2V / 500mA ;; FT = 140MHz ;; PD = 1.5W |
| Company: | Semelab Plc |
| Datasheet: | Download ZTX753DCSM datasheet File size : 18 kB |
| Request For quote: | Find where to buy ZTX753DCSM
|
| |
Datasheet text preview:
ZTX753DCSM
MECHANICAL DATA Dimensions in mm (inches)
PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
2 . 2 9 ± 0.20 ( 0 . 0 9 ± 0.008)
1 . 6 5 ± 0.13 ( 0 . 0 6 5 ± 0.005) 0 .6 4 ± 0.08 ( 0 . 0 2 5 ± 0.003)
1 . 4 0 ± 0.15 ( 0 . 0 5 5 ± 0.006)
FEATURES
· DUAL SILICON PLANAR PNP
4 . 3 2 ± 0.13 ( 0 .1 7 0 ± 0.005)
2 .5 4 ± 0.13 ( 0 .1 0 ± 0.005)
2 1
3 4 5
TRANSISTORS · HERMETIC SURFACE MOUNT PACKAGE · CECC SCREENING OPTIONS · SPACE QUALITY LEVEL OPTIONS
A
6
0.2 3 rad. (0.009) 1 . 2 7 ± 0.13 ( 0 . 0 5 ± 0.005)
6 . 2 2 ± 0.13 ( 0 . 2 4 5 ± 0.005)
A=
LCC2 PACKAGE Underside View
PAD 1 Collector 1 PAD 2 Base 1 PAD 3 Base 2 PAD 4 Collector 2 PAD 5 Emitter 2 PAD 6 Emitter 1
ABSOLUTE MAXIMUM RATINGS PER SIDE (TC = 25°C unless otherwise stated)
VCBO VCEO VEBO ICM IC PTOT TjTSTG R
q
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation @ Tamb = 25°C Derate above 25°C Operating And Storage Temperature Range Junction - Ambient Thermal Resistance
-120V -100V -5V -6A -2A 1W 8mW/°C 55 to 150°C 125°C/W
J-A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00 Issue 3
ZTX753DCSM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current
Test Conditions
IC = 100mA IE = -100mA VCB = -100V T = 100°C VEB = -4V IC = -500mA IB = -50mA* IB = -100mA* IB = -200mA* IB = -100mA* VCE = -2V* VCE = -2V* VCE = 2V* VCE = -2V* VCE = -2V*
Min.
-120 -100 -5
Typ.
Max. Unit
V -0.1 -10 -0.1
m
Collector Emitter Breakdown Voltage IC = 10mA
A
-0.2 -0.35 -0.8 -1.0 -0.95 70 100 55 25 200 200 110 55
-0.3 -0.5 -1.0 -1.3 -1.2 300 V
Collector Emitter Saturation Voltage IC = -1A IC = -2A Base Emitter Saturation Voltage Base Emitter Turn-On Voltage IC = -1A IC = -1A IC = -50mA IC = -500mA IC = -1A IC = -2A
HFE
DC Current Gain
--
* Pulse test tp = 300ms , d £ 2%
DYNAMIC CHARACTERISTICS
Parameter
fT Cobo Ton Toff Transition Frequency Output Capacitance Switching Times Switching Times
(TA = 25°C unless otherwise stated)
Test Conditions
IC = -100mA VCB = -10V VCE = -5V f = 1.0MHz f = 100MHz
Min.
100
Typ.
140
Max. Unit
MHz 30 pF ns
IC = -500mA VCC = 10V IB1=IB2=50mA
40 600
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00 Issue 3
|
|
