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Part: 1803GB122-3D
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
Description:
Company: Semikron
Datasheet: Download 1803GB122-3D datasheet File size : 56 kB
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Datasheet text preview:
SKiiP 1803GB122-3DW I. Power section Absolute maximum ratings
Symbol Conditions IGBT VCES VCC 1) Operating DC link voltage VGES IC Ts = 25 (70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms Tj , (Tstg) Visol rms, AC, 1min per AC terminal, rms, Ts = IAC-terminal 70°C, Tterminal <115°C
Ts = 25°C unless otherwise specified
Values 1200 900 ± 20 1800 (1350) 1800 (1350) 12960 840 -40...+150 (125) 3000 400
Units V V V A A A kA2s °C V A
SKiiP 3 SK integrated intelligent Power 2-pack SKiiP 1803GB122-3DW
Preliminary data
Case S33
Characteristics
Symbol IGBT VCEsat Conditions
Ts = 25°C unless otherwise specified
min.
typ.
max.
Units
IC = 900A, Tj = 25 (125)°C; 2,3 (2,5) 2,6 V - measured at terminal VCEO Tj = 25 (125) °C; at terminal 1,1 (1,0) 1,3 (1,2) V - rCE Tj = 25 (125) °C; at terminal 1,3 (1,7) 1,5 (1,9) - m ICES VGE=0,VCE=VCES,Tj=25(125) °C 3,6 (108) mA - - IC=900A, Vcc=600V 270 mJ - - Eon + Eoff Tj=125°C Vcc=900V 476 mJ - - L CE top, bottom 4 nH - - C CHC per phase , AC side 3,0 nF - - RCC´-EE´ terminal-chip, Tj=25 °C 0,17 - - m Inverse diode IF= 900A; Tj = 25(125) °C VF = VEC 1,8 (1,5) V - 2,3 measured at terminal VTO Tj = 25 (125) °C 1,0 (0,7) 1,2 (0,9) V - rT Tj = 25 (125) °C 0,9 (0,9) 1,2 (1,2) - m IC=900A Vcc=600V 72 mJ - - E RR Tj=125°C Vcc=900V 92 mJ - - Mechanical data Mdc DC terminals, SI Units 6 8 Nm - Mac AC terminals, SI Units 13 15 Nm - 2,4 kg w - - SKiiP 3 System w/o heat sink w heat sink 5,2 kg - - Thermal characteristics (NWK 40; 8l/min; 50%glyc.); "s" reference to heat sink; "r" reference to built-in temperature sensor (acc. IEC 60747-15) RthjsIGBT per IGBT 0,017 °C/W - - Rthjsdiode per diode 0,033 °C/W - - Zth Ri (mK/W) (max. values) taui(s) 1 2 3 4 1 2 3 4 IGBTjr 1,4 6,8 7,8 0,0 69,00 0,35 0,02 1,0 diodejr 2,6 4,0 17,7 17,7 50,0 5,0 0,25 0,04 heatsinkra 4,6 4,7 1,1 0,6 48 15 2,8 0,4
Features · SKiiP technology inside · low loss IGBTs · CAL diode technology · integrated current sensor · integrated temperature sensor · integrated heat sink · IEC 60721-3-3 (humidity) class 3K3/IE32 (SKiiP 3 System) · IEC 68T.1 (climate) 40/125/56 (SKiiP 3 power section) · UL recognized File no. E63532 (SKiiP 3 power section) 1) with assembly of suitable MKP capacitor per terminal (SEMIKRON type is recommended) 8) AC connection busbars must be connected by the user; copper busbars available on request
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee, expressed or implied is made regarding delivery, performance or suitability. by SEMIKRON 030214 B 7 - 17
SKiiP 1803GB122-3DW SKiiP 3 SK integrated intelligent Power II. Integrated gate driver Absolute maximum ratings
Symbol VS2 ViH dv/dt VisolIO VisolPD Visol12 f Top (Tstg) Gate driver features · CMOS compatible inputs · wide range power supply · integrated circuitry to sense phase current, heat sink temperature and DC-bus voltage (option) · short circuit protection · over current protection · over voltage protection (option) · power supply protected against under voltage · interlock of top/bottom switch · isolation by transformers · fibre optic interface (option for GB-types only) · IEC 68T.1 (climate) 40/85/56 (SKiiP 3 gate driver) Term unstabilized 24V power supply input signal voltage (high) secondary to primary side input / output (AC, rms, 2 s) partial discharge extinction voltage, rms, QPD 10 pC; output 1 / output 2 (AC, rms, 2s) switching frequency operating / storage temperature Value 35 15 + 0,3 75 3000 1170 1500 10 - 40 ... + 85 Unit V V kV/µs V V V kHz °C
SKiiP 1803GB122-3DW
Preliminary data
Electrical characteristics (Ta = 25 °C)
Symbol VS2 IS2 ViT+ ViTRin Cin td(on)IO td(off)IO tpERRRESET tTD IanalogOUT IS1out ITRIPSC Ttp UDCTRIP
Values Term min typ max. supply voltage non stabilized 13 24 30 VS2 = 24V 278 + 29*f / kHz + 0,00015 * (IAC/A)2 input threshold voltage (High) 11,2 input threshold voltage (Low) 5,4 input resistance 10 input capacitance 1 input-output turn-on propagation time 1,1 input-output turn-off propagation time 1,6 error memory reset time 9 top/bottom switch: interlock time 3,3 max. 5mA ; 8 V corresponds to 1500 15 V supply voltage for external 50 components; max load current over current trip level ( Ianalog OUT = 10V) 1875 over temperature protection 110 120 not UDC-protection ( Uanalog OUT = 9V) imple (option for GB types) mente d
Units V mA V V k nF µs µs µs µs A mA A °C V
For electrical and thermal design support please use SEMISEL. Access to SEMISEL is via SEMIKRON website http://www.semikron.com.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. B 7 - 18 030214 by SEMIKRON
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