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Part: 1N4933

Category:
 Discrete
   -> Diodes & Rectifiers
             -> Low Power Rectifier

Description:

Company: Semikron

Datasheet: Download 1N4933 datasheet     File size : 47 kB

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Datasheet text preview:
1N 4933 ... 1N 4937 Fast Silicon Rectifiers Schnelle Silizium Gleichrichter

Nominal current ­ Nennstrom
Ø 2.6
-0.1

1A 50...600 V DO-41 DO-204AL 0.4 g

Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx. ­ Gewicht ca.

62.5 ±0.5

5.1 -0.1

Type

Ø 0.8 ±0.05

Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack see page 17 siehe Seite 17

Dimensions / Maße in mm

Maximum ratings Type Typ 1N 4933 1N 4934 1N 4935 1N 4936 1N 4937 Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 50 100 200 400 600

Grenzwerte Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 50 100 200 400 600

Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Operating junction temperature ­ Sperrschichttemperatur Storage temperature ­ Lagerungstemperatur

TA = 75/C f > 15 Hz TA = 25/C TA = 25/C

IFAV IFRM IFSM i2t Tj TS

1 A 1) 10 A 1) 30 A 4.5 A2s ­ 50...+150/C ­ 50...+175/C

1

) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 020404

© by SEMIKRON

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1N 4933 ... 1N 4937 Characteristics Forward voltage ­ Durchlaßspannung Leakage current ­ Sperrstrom Reverse recovery time Sperrverzug Tj = 25/C Tj = 25/C Tj = 100/C IF = 1 A VR = VRRM VR = VRRM VF IR IR t rr RthA Kennwerte < 1.2 V < 5 :A < 100 :A < 200 ns < 45 K/W 1)

IF = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A

Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht ­ umgebende Luft

Rated repetitive peak forward current versus pulse duration Zulässige periodische Impulsbelastung in Abh. von der Impulsdauer

1

) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 020404 © by SEMIKRON

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