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Part: SKIIP20NAB06
Category:
Power Management
-> AC-DC Controllers/Converters
-> Bridge Rectifiers
Description: Miniskiip 2 Semikron Integrated Intelligent Power
Company: Semikron
Datasheet: Download SKIIP20NAB06 datasheet File size : 425 kB
Request For quote: Find where to buy SKIIP20NAB06
Datasheet text preview:
SKiiP 20 NAB 06 - SKiiP 20 NAB 06 I Absolute Maximum Ratings
Symbol Inverter VCES VGES IC ICM IF = IC IFM = ICM Conditions 1) Values 600 ± 20 22 / 15 44 / 30 36 / 24 72 / 48 800 25 370 680 40 . . . + 150 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V
Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C
MiniSKiiP 2 SEMIKRON integrated intelligent Power SKiiP 20 NAB 06 SKiiP 20 NAB 06 I 3) 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter
Case M2
Bridge Rectifier VRRM Theatsink = 80 °C ID IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C tp = 10 ms; sin. 180 °, Tj = 25 °C I2t Tj Tstg Visol AC, 1 min.
Characteristics
Symbol Conditions 1) IGBT - Inverter & Chopper IC = 15 A Tj = 25 (125) °C VCEsat VCC = 300 V; VGE = ± 15 V td(on) tr IC = 15 A; Tj = 125 °C td(off) Rgon = Rgoff = 68 tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz Rthjh per IGBT Diode 2) - Inverter VF = VEC IF = 25 A Tj = 25 (125) °C VTO Tj = 125 °C rT Tj = 125 °C IF = 25 A, VR = 300 V IRRM diF/dt = 500 A/µs Qrr Eoff VGE = 0 V, Tj = 125 °C per diode Rthjh Diode 2) - Chopper VF = VEC IF = 10 A Tj = 25 (125) °C VTO Tj = 125 °C Tj = 125 °C rT IRRM IF = 10 A, VR = 300 V diF/dt = 200 A/µs Qrr VGE = 0 V, Tj = 125 °C Eoff Rthjh per diode Diode - Rectifier VF IF = 25 A, Tj = 25 °C Rthjh per diode Temperature Sensor R TS T = 25 / 100 °C Mechanical Data M1 case to heatsink, SI Units Case mechanical outline see page B 16 8 2 min. typ. max. Units 2,1(2,2) 2,7(2,8) V 35 70 ns 50 100 ns 250 370 ns 500 750 ns 2,2 mJ 0,8 nF 2,0 K/W V 1,45(1,4) 1,7(1,7) V 0,9 0,85 m 32 22 A 25 µC 2,5 mJ 0,75 1,7 K/W V 1,45(1,4) 1,7(1,7) V 0,9 0,85 m 80 55 A 13 µC 1,5 mJ 0,45 K/W 2,7 1,2 1000 / 1670 M2 2,5 2,6 V K/W Nm
UL recognized file no. E63532
· ·
specification of shunts and temperature sensor see part A common characteristics see page B163
Options · also available with single phase rectifier (called 20 NEB 06 or 20 NEB 06 I3)) · also available with faster IGBTs (type ... 063), data sheet on request
1) 2)
3) 4)
Theatsink = 25 °C, unless otherwise specified CAL = Controlled Axial Lifetime Technology (soft and fast recovery) With integrated DC and/or AC shunts accuracy of pure shunt, please note that for DC shunt no separate sensing contact is used. 5 % 4) 1% 16,5 m 10 m B 16 23
Rcs(dc) Rcs(ac) 0 001 31
© by SEMIKRON
Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C Tj = 125 °C VCE = 300 V VGE = ± 15 V RG = 68
Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C Tj = 125 °C VCE = 300 V VGE = ± 15 V IC = 15 A
Fig. 3 Turn-on /-off energy = f (IC) ICpuls = 15 A
Fig. 4 Turn-on /-off energy = f (RG) VGE = 0 V f = 1 MHz
Fig. 5 Typ. gate charge characteristic B 16 24
Fig. 6 Typ. capacitances vs. VCE 000131 © by SEMIKRON
2. Common characteristics of MiniSKiiP
MiniSKiiP 600 V
ICop / IC 1.2
Min i0607
Tj = 150 °C VGE = 15 V
1.0
0.8
0.6
0.4
0.2
0 0 25 50 75 100 125 150 Th [°C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th) Tj = 150 °C VGE = ± 15 V Tj = 150 °C VGE = ± 15 V tsc = 10 µs Lext < 25 nH
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 11 Typ. freewheeling diode forward characteristic © by SEMIKRON
Fig. 12 Forward characteristic of the input bridge diode 0698 B 16 3
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