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Part: SKIIP20NAB12
Category:
Power Management
-> AC-DC Controllers/Converters
-> Bridge Rectifiers
Description: Miniskiip 2 Semikron Integrated Intelligent Power
Company: Semikron
Datasheet: Download SKIIP20NAB12 datasheet File size : 425 kB
Request For quote: Find where to buy SKIIP20NAB12
Datasheet text preview:
SKiiP 20 NAB 12 - SKiiP 20 NAB 12 I Absolute Maximum Ratings
Symbol Inverter VCES VGES IC ICM IF = IC IFM = ICM Conditions 1) (Chopper see SKiiP 22 NAB 12) 1200 ± 20 16 / 11 32 / 22 16 / 11 32 / 22 1500 25 370 680 40 . . . + 150 40 . . . + 125 2500 V V A A A A V A A A2s °C °C V Values Units
Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C
MiniSKiiP 2 SEMIKRON integrated intelligent Power SKiiP 20 NAB 12 SKiiP 20 NAB 12 I 3) 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter
Case M2
Bridge Rectifier VRRM Theatsink = 80 °C ID IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C tp = 10 ms; sin. 180 °, Tj = 25 °C I2t Tj Tstg Visol AC, 1 min.
Characteristics
Symbol Conditions 1) IGBT - Inverter IC = 10 A Tj = 25 (125) °C VCEsat VCC = 600 V; VGE = ± 15 V td(on) tr IC = 10 A; Tj = 125 °C td(off) Rgon = Rgoff = 150 tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz Rthjh per IGBT IGBT - Chopper * IC = 15 A Tj = 25 (125) °C VCEsat td(on) VCC = 600 V; VGE = ± 15 V tr IC = 15 A; Tj = 125 °C Rgon = Rgoff = 82 td(off) tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz Rthjh per IGBT min. typ. max. Units 2,7(3,3) 3,2(3,9) V 55 110 ns 50 100 ns 380 570 ns 80 120 ns 2,7 mJ 0,53 nF 1,8 K/W 2,5(3,1) 3,0(3,7) V 55 110 ns 45 90 ns 400 600 ns 70 100 ns 4,0 mJ 1,0 nF 1,4 K/W
UL recognized file no. E63532
· ·
specification of shunts and temperature sensor see part A common characteristics see page B 16 4
1)
Diode 2) - Inverter (Diode 2) - Chopper see SKiiP 22 NAB 12) V 2,0(1,8) 2,5(2,3) VF = VEC IF = 10 A Tj = 25 (125) °C V 1,2 1,0 Tj = 125 °C VTO m 110 80 rT Tj = 125 °C A 12 IF = 10 A, VR = 600 V IRRM µC 1,8 diF/dt = 300 A/µs Qrr mJ 0,4 Eoff VGE = 0 V, Tj = 125 °C K/W 2,4 per diode Rthjh Diode - Rectifier VF IF = 25 A, Tj = 25 °C per diode Rthjh Temperature Sensor R TS T = 25 / 100 °C Mechanical Data M1 case to heatsink, SI Units Case mechanical outline see page B 16 8 © by SEMIKRON 2 1,2 1000 / 1670 M2 2,5 2,6 V K/W Nm
Theatsink = 25 °C, unless otherwise specified 2) CAL = Controlled Axial Lifetime Technology (soft and fast recovery) 3) With integrated DC and/or AC shunts 4) accuracy of pure shunt, please note that for DC shunt no separate sensing contact is used. Rcs(dc) Rcs(ac) 5 % 4) 1% 16,5 m 10 m
* For diagrams of the Chopper IGBT please refer to SKiiP 22 NAB 12 0 001 31 B 16 49
Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C Tj = 125 °C VCE = 600 V VGE = ± 15 V RG = 150
Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C Tj = 125 °C VCE = 600 V VGE = ± 15 V IC = 10 A
Fig. 3 Turn-on /-off energy = f (IC) ICpuls = 10 A
Fig. 4 Turn-on /-off energy = f (RG) VGE = 0 V f = 1 MHz
Fig. 5 Typ. gate charge characteristic B 16 50
Fig. 6 Typ. capacitances vs. VCE 000131 © by SEMIKRON
MiniSKiiP 1200 V
ICop / IC 1.2
Min i1207
Tj = 150 °C VGE = 15 V
1.0
0.8
0.6
0.4
0.2
0 0 25 50 75 100 125 150 Th [°C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
ICpu ls/IC 2,5
Min i1209
Tj = 150 °C VGE = ± 15 V
ICsc/ICN 12
Min i1210
2
10
Tj = 150 °C VGE = ± 15 V tsc = 10 µs Lext < 25 nH
8
1,5
6
1
4
Not e: *Allow ed numbers of sh ort ci cuit :1s
0,5
2
0 0 50 0 10 00 15 00 VCE [V]
0 0 50 0 10 00 15 00
VCE [V]
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 11 Typ. freewheeling diode forward characteristic B 16 4
Fig. 12 Forward characteristic of the input bridge diode 0698 © by SEMIKRON
Others parts begin by sk
SK-1 SK-2 SK-3 SK-4 SK-5 SK-6 SK-7 SK-8 SK-9 SK-10
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