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Part: SKIIP22NAB12
Category:
Power Management
-> AC-DC Controllers/Converters
-> Bridge Rectifiers
Description: Miniskiip 2 Semikron Integrated Intelligent Power
Company: Semikron
Datasheet: Download SKIIP22NAB12 datasheet File size : 425 kB
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Datasheet text preview:
SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I Absolute Maximum Ratings
Symbol Conditions 1) Values 1200 ± 20 23 / 15 46 / 30 24 / 17 48 / 34 1500 25 700 2400 40 . . . + 150 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V Inverter & Chopper VCES VGES IC Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C ICM Theatsink = 25 / 80 °C IF = IC IFM = ICM tp < 1 ms; Theatsink = 25 / 80 °C Bridge Rectifier VRRM Theatsink = 80 °C ID IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C tp = 10 ms; sin. 180 °, Tj = 25 °C I2t Tj Tstg Visol AC, 1 min.
MiniSKiiP 2 SEMIKRON integrated intelligent Power SKiiP 22 NAB 12 SKiiP 22 NAB 12 I 3) 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter
Case M2
Characteristics
Symbol Conditions 1) IGBT - Inverter & Chopper IC = 15 A Tj = 25 (125) °C VCEsat VCC = 600 V; VGE = ± 15 V td(on) tr IC = 15 A; Tj = 125 °C td(off) Rgon = Rgoff = 82 tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz Rthjh per IGBT Diode 2) - Inverter & Chopper VF = VEC IF = 15 A Tj = 25 (125) °C VTO Tj = 125 °C rT Tj = 125 °C IF = 15 A, VR = 600 V IRRM diF/dt = 400 A/µs Qrr Eoff VGE = 0 V, Tj = 125 °C per diode Rthjh Diode - Rectifier VF IF = 35 A, Tj = 25 °C Rthjh per diode Temperature Sensor T = 25 / 100 °C R TS Shunts (SKiiP 22 NAB 12 I) Rcs(dc) 5 % 4) Rcs(ac) 1% Mechanical Data case to heatsink, SI Units M1 mechanical outline see page Case B 16 8 2 min. typ. max. Units 2,5(3,1) 3,0(3,7) V 55 110 ns 45 90 ns 400 600 ns 70 100 ns 4,0 mJ 1,0 nF 1,4 K/W V 2,0(1,8) 2,5(2,3) V 1,2 1,0 m 73 53 A 16 µC 2,7 mJ 0,6 1,7 K/W 1,2 1000 / 1670 16,5 10 M2 2,5 1,6 V K/W m m Nm
UL recognized file no. E63532
· ·
specification of shunts and temperature sensor see part A common characteristics see page B 16 4 Theatsink = 25 °C, unless otherwise specified CAL = Controlled Axial Lifetime Technology (soft and fast recovery) With integrated DC and/or AC shunts accuracy of pure shunt, please note that for DC shunt no separate sensing contact is used.
1) 2)
3) 4)
© by SEMIKRON
0 001 31
B 16 53
Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C
Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C
22NA1203.xls
22NA1204.xls
5 mWs
Eon
4
Tj = 125 °C VCE = 600 V VGE = ± 15 V RG = 52
5 mWs 4
Tj = 125 °C VCE = 600 V VGE = ± 15 V IC = 15 A
Eon
3
Eoff
3
2
2
Eoff
1 E 0 0 IC 10 20 A 30
1 E 0 0 RG 50 100 150
Fig. 3 Turn-on /-off energy = f (IC) ICpuls = 15 A
Fig. 4 Turn-on /-off energy = f (RG) VG E = 0 V f = 1 MHz
Fig. 5 Typ. gate charge characteristic B 16 54
Fig. 6 Typ. capacitances vs. VCE 000131 © by SEMIKRON
MiniSKiiP 1200 V
ICop / IC 1.2
Min i1207
Tj = 150 °C VGE = 15 V
1.0
0.8
0.6
0.4
0.2
0 0 25 50 75 100 125 150 Th [°C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
ICpu ls/IC 2,5
Min i1209
Tj = 150 °C VGE = ± 15 V
ICsc/ICN 12
Min i1210
2
10
Tj = 150 °C VGE = ± 15 V tsc = 10 µs Lext < 25 nH
8
1,5
6
1
4
Not e: *Allow ed numbers of sh ort ci cuit :1s
0,5
2
0 0 50 0 10 00 15 00 VCE [V]
0 0 50 0 10 00 15 00
VCE [V]
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 11 Typ. freewheeling diode forward characteristic B 16 4
Fig. 12 Forward characteristic of the input bridge diode 0698 © by SEMIKRON
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