|
Details, datasheet, quote on part number:PC8D52
| |
| Part: | PC8D52 |
| Category: | Optoelectronics => Optocouplers |
| Description: | High ISOlation Voltage, High Collector-emitter Voltage Photocoupler (2-ch) |
| Company: | Sharp Microelectronics of the Americas |
| Datasheet: | Download PC8D52 datasheet File size : 83 kB |
| Request For quote: | Find where to buy PC8D52
|
| |
Datasheet text preview:
PC8D52/PC8Q52
PC8D52/PC8Q52
Features
1. High collector-emitter voltage VCEO:350V 2. High current transfer ratio (CTR:MIN. 1 000% at IF=1mA, VCE=2V) 3. High isolation voltage between input and output (Viso (rms):5kV) 4. Compact dual-in-line package PC8D52 (2-channel type) PC8Q52 (4-channel type) 5. Recognized by UL (NO. E64380)
High Collector-emitter Voltage Type Photocouplers
Outline Dimensions
PC8D52
Anode mark
8 7
(Unit : mm)
Internal connection diagram
8 7 6 5
2.54±0.25
6 5
1
2
3
4 1 2 3 4
1.2±0.3 0.5TYP. 3.5±0.5
0.9±0.2 9.66±0.5 3.0±0.5
6.5±0.5
PC8D52
7.62±0.3
Applications
1. Telephones 2. Facsimiles 3. Modems 4. Set-top Boxes
3.3
±0.5
0.26±0.1 =0 to 13°
0.5±0.1
13 24
Anode Cathode
57 68
Emitter Collector
Absolute Maximum Ratings
Parameter Symbol IF Forward current *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation *2 Isolation voltage Viso (rms) Operating temperature Topr Tstg Storage temperature *3 Soldering temperature Tsol Rating 50 1 6 70 350 0.1 150 150 200 5 -30 to +100 -55 to +125 260
0.5TYP. 3.5±0.5
(Ta=25°C) Unit mA A V mW V V mA mW mW kV °C °C °C
PC8Q52
Internal connectiondiagram
16 15 14 13 12 11 10 9
Input
1
2
3
4
5
6
7
8
Output
Anode mark
2.54±0.25
16 15 14 13 12 11 10 9
PC8Q52
1
2
3
4
5
6
7
8
1.2
±0.3
0.9±0.2 7.62±0.3
*1 Pulse width100µs, Duty ratio:0.001 *2 40 to 60%RH, AC for 1 minute *3 For 10s
19.82±0.5
6.5±0.5
0.26±0.1 3.0±0.5 0.5±0.1 =0 to 13°
3.3±0.5
1357 2468
Anode Cathode
9 11 13 15 10 12 14 16
Emitter Collector
(Note) : The diode of output side is not a protection diode of reverse voltage.
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Internet Internet address for Electronic Components Group http://sharp-world.com/ecg/
PC8D52/PC8Q52 Electro-optical Characteristics
Symbol Parameter VF Forward voltage Reverse current IR Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf Cut-off frequency fc Rise time tr Response time tf Fall time
Conditions IF=10mA VR=4V V=0, f=1kHz VCE=200V, IF=0 IC=0.1mA, IF=0 IF=1mA, VCE=2V IF=20mA, IC=100mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=20mA, RL=100, -3dB
Input
Output
Transfer characteristics
VCE=2V, IC=20mA, RL=100
MIN. - - - - 350 10 - 5×1010 - 1 - -
TYP. 1.2 - 30 - - 40 - 1011 0.6 7 100 20
MAX. 1.4 10 250 200 - 150 1.2 - 1.0 - 300 100
(Ta=25°C) Unit V µA pF nA V mA V pF kHz µs µs
Fig.1 Forward Current vs. Ambient Temperature
60 50 Forward current IF (mA) 40 30 20 10 0 -30
Fig.2 Collector Power Dissipation vs. Ambient Temperature
200 Collector power dissipation PC (mW)
150
100
50
0
25
50
75
100
125
0 -30
0
25
50
75
100
125
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Fig.3 Peak Forward Current vs. Duty Ratio
10 000 5 000 Peak forward current IFM (mA) 2 000 1 000 500 200 100 50 20 10 5 5 10-3 2 5 10-2 2 5 10-1 2 5 1 Pulse width100µs Ta=25°C
Fig.4 Forward Current vs. Forward Voltage
500 200 Forward current IF (mA) 100 50 20 10 5 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Ta=75°C 50°C 25°C 0°C -25°C
Duty ratio
Forward voltage VF (V)
PC8D52/PC8Q52 Fig.5 Current Transfer Ratio vs. Forward Current
5 000 VCE=2V Ta=25°C Current transfer ratio CTR (%) 4 000 Collector current IC (mA) I F =10mA 5mA 3mA 2.5mA 2mA 1.5mA 1mA PC (MAX.)
Fig.6 Collector Current vs. Collector-emitter Voltage
200 Ta=25°C
3 000
100
2 000
1 000
0 0.1
0 0.2 0.5 1 2 5 10 0 1 2 3 Forward current IF (mA)
0.5mA 4 5
Collector-emitter voltage VCE (V)
Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature
150 IF=1mA VCE=2V
Fig.8 Collector - emitter Saturation Voltage vs. Ambient Temperature
1.2 Collector-emitter saturation voltage VCE (sat) (V) 1.0 0.8 0.6 0.4 0.2 0 -30
Relative current transfer ratio (%)
100
50
0 -30
IF=20mA IC=100mA 0 20 40 60 80 100
0
20
40
60
80
100
Ambient Temperature Ta (°C)
Ambient temperature Ta (°C)
Fig.9 Collector Dark Current vs. Ambient Temperature
10-5 10 Collector dark current ICEO (A)
-6
Fig.10 Response Time vs. Load Resistance
1 000 500 200 Response time (µs) VCE=2V IC=20mA Ta=25°C
VCE=200V
tr
10-7 10-8 10
-9
100 50 20 10 5
tf
td ts
10-10 10-11 -30 2 1 0.01
0
20
40
60
80
100
0.1
1
10
Ambient temperature Ta (°C)
Load resistance RL (k)
|
|
