Digchip : Database on electronics components
 
Member, Distributor  
Log In
Email:
Password:


Part: 2SK2196

Category:
 Discrete
   -> Transistors
     -> FETs (Field Effect Transistors)
       -> MOSFETs
         -> Power MOSFETs

Description: Power MOSFETs / Vx-ii Series (Three Terminal Type)

Company: Shindengen America, Inc.

Datasheet: Download 2SK2196 datasheet     File size : 292 kB

Request For quote: Find where to buy 2SK2196



Datasheet text preview:
SHINDENGEN
VX-2 Series Power MOSFET
N-Channel Enhancement type

(F20W50VX2)
500V 20A
FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage power supply Inverter

2SK2196

OUTLINE DIMENSIONS
Case : MTO-3P (Unit : mm)

RATINGS
Absolute Maximum Ratings iTc = 25j Item Symbol Conditions T stg Storage Temperature T ch C hannel Temperature VDSS Drain-Source Voltage Gate-Source Voltage VGSS ID C ontinuous Drain CurrentiDCj I DP C ontinuous Drain CurrentiPeak) IS C ontinuous Source CurrentiDCj T otal Power Dissipation PT I AS Si ngle Pulse Avalanche Current T ch = 25 snq i Recommended torque F 0.5 N¥m j M ounti ng Torque Ratings -55`150 150 500 }30 20 60 20 125 20 0.8 Uni t V A W A NEm

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

VX-2 Series Power MOSFET
Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drai n-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current I GSS Gate-Source Leakage Current Forward Tran]conductance gfs Static Drain-Source On-]tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drai n Diode Forwade Voltage Æjc T he\mal Resistance Qg T otal Gate Charge Ciss I nput Capacitance Reverse Transfer Capacitance Crss Output Capacitance C oss T urn-On Time ton toff T urn-Off Time Conditions

2SK2196( F20W50VX2 )
Min. 500 6 2. 5 Typ. Max. 250 }0. 1 Unit V ÊA

I D = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = }30V, VDS = 0V I D = 10A, VDS = 10V I D = 10A, VGS = 10V I D = 1mA, VDS = 10V I S = 10A, VGS = 0V juncti on to case VDD = 400V, VGS = 10V, ID = 20A VDS = 10V, VGS = 0V, f = 1MHZ I D = 10A, VGS = 10V, RL = 15¶

15 0. 27 3. 0 85 2400 170 500 135 340

S 0. 35 ¶ 3. 5 V 1. 5 1 . 0 /L nC pF 225 565 ns

2SK2196
40 Tc = -55°C 35 30

Transfer Characteristics
2 5 °C

1 0 0 °C

Drain Current ID [A]

25 20 15 10 5 0

1 5 0 °C

VDS = 25V pulse test TYP 0 5 10 15 20

Gate-Source Voltage VGS [V]

2SK2196

Static Drain-Source On-state Resistance

Static Drain-Source On-state Resistance RDS(ON) []

1

ID = 10A

0.1 VG S = 10V pulse test TYP -50 0 50 100 150

Case Temperature Tc [°C]

2SK2196
5

Gate Threshold Voltage

Gate Threshold Voltage VTH [V]

4

3

2

1 VDS = 10V ID = 1mA TYP -50 0 50 100 150

0

Case Temperature Tc [°C]




Others parts begin by 2s
2S-1   2S-2   2S-3   2S-4   2S-5   2S-6   2S-7   2S-8   2S-9   2S-10   2S-11   2S-12   2S-13   2S-14   2S-15   2S-16   2S-17   2S-18   2S-19   2S-20   2S-21   2S-22   2S-23   2S-24   2S-25   2S-26   2S-27   2S-28   2S-29   2S-30   2S-31   2S-32   2S-33   2S-34   2S-35   2S-36   2S-37   2S-38   2S-39   2S-40   2S-41   2S-42   2S-43   2S-44   2S-45   2S-46   2S-47   2S-48   2S-49