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Part: 2SK2663

Category:
 Discrete
   -> Transistors
     -> FETs (Field Effect Transistors)
       -> MOSFETs
         -> Power MOSFETs

Description:

Company: Shindengen America, Inc.

Datasheet: Download 2SK2663 datasheet     File size : 316 kB

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Datasheet text preview:
SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type

( F1E90HVX2 )
900V 1A
FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 240V input High voltage power supply Inverter

2SK2663

OUTLINE DIMENSIONS
Case : E-pack (Unit : mm)

RATINGS
Absolute Maximum Ratings iTc = 25j Item Symbol Storage Temperature T stg T ch C hannel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID C ontinuous Drain CurrentiDCj I DP C ontinuous Drain CurrentiPeak) C ontinuous Source CurrentiDCj IS T otal Power Dissipation PT I AR Repeti ti ve Avalanche Current EA S Si ngle Avalanche Energy EAR Repeti ti ve Avalanche Energy Conditions Ratings -55`150 150 900 }30 1 2 1 10 1 10 1 Uni t V A W A mJ

Pulse width10Ês, Duty cycle1/100

T ch = 150 T ch = 25 T ch = 25

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

HVX-2 Series Power MOSFET
Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drai n-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current I GSS Gate-Source Leakage Current gfs Forward Tran]conductance Static Drain-Source On-]tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drai n Diode Forward Voltage Æjc T hermal Resistance T otal Gate Charge Qg I nput Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance C oss T urn-On Time ton T urn-Off Time toff Conditions

2SK2663 ( F1E90HVX2 )
Min. 900 0. 6 2. 5 Typ. Max. 250 }0. 1 Unit V ÊA S ¶ V

I D = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = }30V, VDS = 0V I D = 0. 5A, VDS = 10V I D = 0.5A, VGS = 10V I D = 0. 2mA, VDS = 10V I S = 0.5A, VGS = 0V juncti on to case VDD = 400V, VGS = 10V, ID = 1A VDS = 25V, VGS = 0V, f = 1MHZ I D = 0. 5A, VDD = 150V, RL = 300¶

1. 0 10. 5 3. 0 10. 5 230 5 23 10 50

14 3. 5 1. 5 1 2 . 5 /L nC pF 18 85 ns

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

2SK2663
2 Tc = -55°C

Transfer Characteristics

1.5

2 5 °C

Drain Current ID [A]

1 0 0 °C 1 1 5 0 °C

0.5

VDS = 25V TYP 0 0 5 10 15 20

Gate-Source Voltage VGS [V]

2SK2663
100

Static Drain-Source On-state Resistance

Static Drain-Source On-state Resistance RDS(ON) []

ID = 0.5A

10

1

VG S = 10V pulse test TYP -50 0 50 100 150

Case Temperature Tc [°C]

2SK2663
6

Gate Threshold Voltage

5

Gate Threshold Voltage VTH [V]

4

3

2

1 VDS = 10V ID = 1mA TYP -50 0 50 100 150

0

Case Temperature Tc [°C]




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