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Part: 2SK2666
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: Power MOSFETs / Hvx-ii Series (Three Terminal Type)
Company: Shindengen America, Inc.
Datasheet: Download 2SK2666 datasheet File size : 316 kB
Request For quote: Find where to buy 2SK2666
Datasheet text preview:
SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
( F3F90HVX2 )
900V 3A
FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 240V input High voltage power supply Inverter
2SK2666
OUTLINE DIMENSIONS
Case : FTO-220 (Unit : mm)
RATINGS
Absolute Maximum Ratings iTc = 25j Item Symbol T stg Storage Temperature T ch C hannel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage C ontinuous Drain CurrentiDCj ID I DP C ontinuous Drain CurrentiPeak) IS C ontinuous Source CurrentiDCj PT T otal Power Dissipation I AR Repeti ti ve Avalanche Current Si ngle Avalanche Energy EA S Repeti ti ve Avalanche Energy EAR Vd i s Di electric Strength T OR M ounti ng Torque Conditions Ratings -55`150 150 900 }30 3 6 3 30 3 48 4.8 2 0.5 Uni t V A W A mJ kV N¥m
Pulse width10Ês, Duty cycle1/100
T ch = 150 T ch = 25 T ch = 25 T erminal s to case,@AC 1 minute i Recommended torque F0.3 N¥m j
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
HVX-2 Series Power MOSFET
Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drai n-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current I GSS Gate-Source Leakage Current gfs Forward Tran]conductance Static Drain-Source On-]tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drai n Diode Forward Voltage Æjc T hermal Resistance T otal Gate Charge Qg I nput Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance C oss T urn-On Time ton T urn-Off Time toff Conditions
2SK2666 ( F3F90HVX2 )
Min. 900 1. 5 2. 5 Typ. Max. 250 }0. 1 Unit V ÊA S ¶ V
I D = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = }30V, VDS = 0V I D = 1. 5A, VDS = 10V I D = 1.5A, VGS = 10V I D = 1mA, VDS = 10V I S = 1.5A, VGS = 0V juncti on to case VDD = 400V, VGS = 10V, ID = 3A VDS = 25V, VGS = 0V, f = 1MHZ I D = 1. 5A, RL = 100¶, VGS = 10V
2. 5 3. 5 3. 0 30 630 16 67 40 140
4. 7 3. 5 1. 5 4 . 1 6 /L nC pF 70 230 ns
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2666
6 Tc = -55°C 5
Transfer Characteristics
2 5 °C
Drain Current ID [A]
4 1 0 0 °C 3 1 5 0 °C 2
1 VDS = 25V TYP 0 0 5 10 15 20
Gate-Source Voltage VGS [V]
2SK2666
100
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) []
10 ID = 1.5A
1
0.1
VG S = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [°C]
2SK2666
6
Gate Threshold Voltage
5
Gate Threshold Voltage VTH [V]
4
3
2
1 VDS = 10V ID = 1mA TYP -50 0 50 100 150
0
Case Temperature Tc [°C]
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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