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Part: 2SK2669
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: Power MOSFETs / Hvx-ii Series (Three Terminal Type)
Company: Shindengen America, Inc.
Datasheet: Download 2SK2669 datasheet File size : 316 kB
Request For quote: Find where to buy 2SK2669
Datasheet text preview:
SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
( F5V90HVX2 )
900V 5A
FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 240V input High voltage power supply Inverter
(Unit : mm)
2SK2669
OUTLINE DIMENSIONS
Case : TO-220
RATINGS
Absolute Maximum Ratings iTc = 25j Item Symbol T stg Storage Temperature T ch C hannel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID C ontinuous Drain CurrentiDCj I DP C ontinuous Drain CurrentiPeak) IS C ontinuous Source CurrentiDCj PT T otal Power Dissipation I AR Repeti ti ve Avalanche Current EA S Si ngle Avalanche Energy EAR Repeti ti ve Avalanche Energy T OR M ounti ng Torque Conditions Ratings -55`150 150 900 }30 5 10 5 60 5 100 10 0.5 Uni t V A W A mJ N¥m
Pulse width10Ês, Duty cycle1/100
T ch = 150 T ch = 25 T ch = 25 i Recommended torque F 0.3 N¥m j
Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd.
HVX-2 Series Power MOSFET
Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drai n-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current I GSS Gate-Source Leakage Current gfs Forward Tran]conductance Static Drain-Source On-]tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drai n Diode Forward Voltage Æjc T hermal Resistance T otal Gate Charge Qg I nput Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance C oss T urn-On Time ton T urn-Off Time toff Conditions
2SK2669 ( F5V90HVX2 )
Min. 900 2. 4 2. 5 Typ. Max. 250 }0. 1 Unit V ÊA S ¶ V
I D = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = }30V, VDS = 0V I D = 2. 5A, VDS = 10V I D =2.5A, VGS = 10V I D = 1mA, VDS = 10V I S = 2.5A, VGS = 0V juncti on to case VGS = 10V, ID = 5A, VDD = 400V VDS = 25V, VGS = 0V, f = 1MHZ I D = 2. 5A, VGS = 10V, RL = 60¶
4. 0 2. 1 3. 0 45 1140 23 105 55 210
2. 8 3. 5 1. 5 2 . 0 8 /L nC pF 100 350 ns
Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd.
2SK2669
10 Tc = -55°C
Transfer Characteristics
2 5 °C 8
Drain Current ID [A]
6
1 0 0 °C 1 5 0 °C
4
2 VDS = 25V TYP 0 0 5 10 15 20
Gate-Source Voltage VGS [V]
2SK2669
100
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) []
10
ID = 2.5A
1
0.1
VG S = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [°C]
2SK2669
6
Gate Threshold Voltage
5
Gate Threshold Voltage VTH [V]
4
3
2
1 VDS = 10V ID = 1mA TYP -50 0 50 100 150
0
Case Temperature Tc [°C]
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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