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Part: D1F20

Category:
 Discrete
   -> Diodes & Rectifiers
     -> General Purpose Rectifiers

Description: General Purpose Rectifiers/ Single (Surface Mount)

Company: Shindengen America, Inc.

Datasheet: Download D1F20 datasheet     File size : 222 kB

Request For quote: Find where to buy D1F20



Datasheet text preview:
SHINDENGEN
General Purpose Rectifiers
Single

D1F20
200V 1A
FEATURES High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source(Power Supply) Home Appliances, Office Equipment Telecommunication, Factory Automation

OUTLINE DIMENSIONS
Case : 1F Unit : mm

RATINGS
Absolute Maximum Ratings (If not specified Tl=25) Item Symbol Conditions T stg Storage Temperature Tj Operati ng Junction Temperature VRM M axi mum Reverse Voltage IO A verage Rectified Forward Current 50Hz sine wave, R-load, Ta=25 On alumina substrate
50Hz sine wave, R-load, Ta=25 Peak Surge Forward Current On glass-epoxy substrate

I FSM

50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25

Ratings -55`150 150 200 1 0.75 25

Un i t V A A

Electrical Characteristics (If not specified Tl=25) Item Symbol Conditions VF Forward Voltage I F=1A, Pulse measurement IR Reverse Current VR=VRM , Pulse measurement
T hermal Resistance

Ratings M ax.1.1 M ax.10 M ax.23 M ax.108 M ax.157

Un i t V ÊA /W

Æjl Æja

juncti on to lead juncti on to ambient juncti on to ambient On alumina substrate On glass-epoxy substrate

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

D1F x
10

Forward Voltage

5

2

IF [A]

1 Tl=150°C [TYP] Tl= 25°C [TYP]

Forward Current

0.5

0.2

0.1

0.05

0.02

0.01

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

Forward Voltage

VF

[V]

D1Fx
2

Forward Power Dissipation
SIN

Forward Power Dissipation PF [W]

1.5

1

0.5

0

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

Average Rectified Forward Current IO [A]

Tj = 150°C Sine wave

D1Fx
1.6

Derating Curve

Average Rectified Forward Current IO [A]

1.4 1.2 SIN 1 0.8 0.6 0.4 0.2 0

Alumina substrate Soldering land 2mm ×2mm Conductor layer 20µm Substrate thickness 0.64mm

0

20

40

60

80

100

120

140

160

Ambient Temperature Ta [°C]

VR = VRM 0 0

IO

VR tp D=tp/T T

D1Fx
1.4

Derating Curve

Average Rectified Forward Current IO [A]

1.2

1 SIN

Glass-epoxy substrate Soldering land 2mm × 2mm Conductor layer 35µm

0.8

0.6

0.4

0.2

0

0

20

40

60

80

100

120

140

160

Ambient Temperature Ta [°C]
VR = VRM Sine wave R-load Free in air

IO 0 0 VR tp D=tp/T T




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