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Details, datasheet, quote on part number:D1F60
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| Part: | D1F60 |
| Category: | Discrete => Diodes & Rectifiers => General Purpose Rectifiers |
| Description: | General Purpose Rectifiers/ Single (Surface Mount) |
| Company: | Shindengen America, Inc. |
| Datasheet: | Download D1F60 datasheet File size : 182 kB |
| Request For quote: | Find where to buy D1F60
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Datasheet text preview:
SHINDENGEN
General Purpose Rectifiers
Single
D1F60
600V 1A
FEATURES High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source(Power Supply) Home Appliances, Office Equipment Telecommunication, Factory Automation
OUTLINE DIMENSIONS
Case : 1F Unit : mm
RATINGS
Absolute Maximum Ratings (If not specified Tl=25) Item Symbol Conditions T stg Storage Temperature Tj Operati ng Junction Temperature VRM M axi mum Reverse Voltage IO A verage Rectified Forward Current 50Hz sine wave, R-load, On alumina substrate Ta=25
50Hz sine wave, R-load, On glass-epoxy substrate Ta=25 Peak Surge Forward Current
I FSM
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25
Ratings -55`150 150 600 1 0 .75 25
Un i t V A A
Electrical Characteristics (If not specified Tl=25) Item Symbol Conditions VF Forward Voltage I F=1A, Pulse measurement IR Reverse Current VR=VRM , Pulse measurement
T hermal Resistance
Ratings M ax.1.1 M ax.10 M ax.23 M ax.108 M ax.157
Un i t V ÊA /W
Æjl Æja
juncti on to lead juncti on to ambient, On alumina substrate juncti on to ambient, On glass-epoxy substrate
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
D1F x
10
Forward Voltage
5
2
IF [A]
1 Tl=150°C [TYP] Tl= 25°C [TYP]
Forward Current
0.5
0.2
0.1
0.05
0.02
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage
VF
[V]
D1Fx
2
Forward Power Dissipation
SIN
Forward Power Dissipation PF [W]
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Average Rectified Forward Current IO [A]
Tj = 150°C Sine wave
D1Fx
1.6
Derating Curve
Average Rectified Forward Current IO [A]
1.4 1.2 SIN 1 0.8 0.6 0.4 0.2 0
Alumina substrate Soldering land 2mm ×2mm Conductor layer 20µm Substrate thickness 0.64mm
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
VR = VRM 0 0
IO
VR tp D=tp/T T
D1Fx
1.4
Derating Curve
Average Rectified Forward Current IO [A]
1.2
1 SIN
Glass-epoxy substrate Soldering land 2mm × 2mm Conductor layer 35µm
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
VR = VRM Sine wave R-load Free in air
IO 0 0 VR tp D=tp/T T
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