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Part: D1FL40

Category:
 Discrete
   -> Diodes & Rectifiers
     -> Super Fast Recovery Rectifiers

Description:

Company: Shindengen America, Inc.

Datasheet: Download D1FL40 datasheet     File size : 222 kB

Request For quote: Find where to buy D1FL40



Datasheet text preview:
SHINDENGEN
Super Fast Recovery Rectifiers
Single

D1FL40
400V 0.8A
FEATURES Small SMT Low noise trr50ns APPLICATION Switching power supply DC/DC converter Free Wheel Home Appliances, Office Equipment Telecommunication, Factory Automation

OUTLINE DIMENSIONS
Case : 1F Unit : mm

RATINGS
Absolute Maximum Ratings (If not specified Tl=25) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Ta=25 On alumina substrate
Peak Surge Forward Current

IFSM

50Hz sine wave, R-load, Ta=28 On glass-epoxy substrate 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25

Ratings -55 to 150 150 400 0.8 0.6 25 Ratings Max 1.3 Max 10 Max 50 Max 23 Max 108 Max 157

Unit V A A Unit V ÊA ns /W

Electrical Characteristics (If not specified Tl=25) Item Symbol Conditions VF Forward Voltage IF=0.8A, Pulse measurement IR Reverse Current VR=VRM, Pulse measurement trr Reverse Recovery Time IF=0.5A, IR=1A Æjl junction to lead Æja junction to ambient, On alumina substrate Thermal Resistance
junction to ambient, On glass-epoxy substrate

Copyright & Copy;2003 Shindengen Electric Mfg.Co.,Ltd.

D1FL40
10

Forward Voltage

1

Forward Current IF [A]

Tl=150°C [MAX] Tl=150°C [TYP] Tl=25 °C [MAX] Tl=25 °C [TYP] 0.1

Pulse measurement per diode

0.01

0

0.4

0.8

1.2

1.6

2

2.4

2.8

3.2

Forward Voltage VF [V]

D1FL40
1.6 1.4

Forward Power Dissipation
DC D=0.8 0.5

Forward Power Dissipation PF [W]

1.2 0.3 1 0.8 0.6 0.4 0.2 0 0.1 0.05 0.2

SIN

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

Average Rectified Forward Current IO [A]

Tj = Tjmax IO 0 tp D=tp /T T

D1FL40
1.6

Derating Curve

Average Rectified Forward Current IO [A]

1.4 1.2 1 0.5 0.8 0.6 0.4 0.2 0 SIN 0.3 0.2 0.1 0.05 DC

D=0.8

Alumina substrate Soldering land 2mm×2mm Conductor layer 20µm Substrate thickness 0.64mm

0

20

40

60

80

100

120

140

160

Ambient Temperature Ta [°C]

VR = VRM IO 0 0 VR tp D=tp/T T

D1FL40
1

Derating Curve

Average Rectified Forward Current IO [A]

DC 0.8 0.5 0.6 SIN 0.3 0.2 0.4 0.1 0.05 0.2

D=0.8

Glass-epoxy substrate Soldering land 2mm×2mm Conductor layer 35µm

0

0

20

40

60

80

100

120

140

160

Ambient Temperature Ta [°C]

VR = VRM IO 0 0 VR tp D=tp/T T




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