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Part: D1UB80
Category: Discrete -> Diodes & Rectifiers
Description: General Purpose Rectifiers ( 800v 1a )
Company: Shindengen America, Inc.
Datasheet: Download D1UB80 datasheet File size : 222 kB
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Datasheet text preview:
SHINDENGEN
General Purpose Rectifiers
SMT Bridges
D1UB80
800V 1A
OUTLINE DIMENSIONS
Case : SOP-4
Unit : m
RATINGS
·oeAbsolute Maximum Ratings (If not specified Tc=25·Z) Item Symbol Conditions Ratings U n i t Storage Temperature Tstg -55·`150 ·Z Operating Junction Temperature Tj 150 ·Z Maximum Reverse Voltage VRM 800 V IO Average Rectified Forward Current50Hz sine wave, R-load, Ta=25·Z 1 A Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25A 30 ·Z 2 Current Squared Time I2t 1ms·...t·10ms Tj=25 ·Z As 3 ·oeElectrical Characteristics (If not specified Tc=25·Z) Item Symbol Conditions Ratings U n i t Forward Voltage VF I =0.4A, Pulse measurement, Rating of per diodex.0.95 V Ma F Pulse measurement, Rating of per diode ax.10 ÊA Reverse Current I R M R V =800v, Thermal Resistance Æjl junction to lead ·@ Without heatsink Max.25 ·Z/W Æ j a junction to ambient Without heatsink Max.62.5
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
D1UB80
Forward Voltage
10
Forward Current IF [A]
Tl=150°C [TYP] Tl=25 °C [TYP] 1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
D1UB80
2.5
Forward Power Dissipation
Forward Power Dissipation PF [W]
SIN 2
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
Average Rectified Forward Current IO [A]
Tj = 150°C Sine wave
D1UB80
1.6
Derating Curve
Average Rectified Forward Current IO [A]
1.4 1.2 SIN 1 0.8 0.6 0.4 0.2 0 Alumina substrate 50.8mm2 Soldering land 1mm Conductor layer 20µm Substrate thickness 0.64mm
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
VR = VRM 0 0
IO
VR tp D=tp /T T
D1UB80
1.6
Derating Curve
Average Rectified Forward Current IO [A]
1.4 1.2 SIN 1 0.8 0.6 0.4 0.2 0
0
20
40
60
80
100
120
140
160
Lead Temperature Tl [°C]
VR = VRM 0 0
IO
VR tp D=tp /T T
Others parts begin by d1
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