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Details, datasheet, quote on part number:D2F20
 
 
Part:D2F20
Category:Discrete => Diodes & Rectifiers => General Purpose Rectifiers
Description:General Purpose Rectifiers/ Single (Surface Mount)
Company:Shindengen America, Inc.
Datasheet:Download D2F20 datasheet   File size : 167 kB
Request For quote:  Find where to buy D2F20
 



Datasheet text preview:
SHINDENGEN
General Purpose Rectifiers
Single

D2F20
FEATURES High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source(Power Supply) Home Appliances, Office Equipment Telecommunication, Factory Automation

OUTLINE DIMENSIONS
Case : 2F (Unit : mm)

RATINGS
Absolute Maximum Ratings (If not specified Tl=25) Item Symbol Conditions T stg Storage Temperature Tj Operati ng Junction Temperature VRM M axi mum Reverse Voltage IO A verage Rectified Forward Current 50Hz sine wave, R-load, Ta=25 On alumina substrate
50Hz sine wave, R-load, Ta=25 Peak Surge Forward Current On glass-epoxy substrate

I FSM

50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25

Ratings -55`150 150 200 1.4 1.1 60

Un i t V A A

Electrical Characteristics (If not specified Tl=25) Item Symbol Conditions VF Forward Voltage I F=1.4A, Pulse measurement IR Reverse Current VR=VRM , Pulse measurement Æjl
T hermal Resistance juncti on to lead juncti on to ambient, On alumina substrate On glass-epoxy substrate juncti on to ambient,

Ratings M ax.1.05 M ax.10 M ax.24 M ax.90 M ax.120

Un i t V ÊA /W

Æja

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

D2Fx

Forward Voltage

10

Forward Current IF [A]

Tl=150°C [TYP] 1

Tl=25 °C [TYP]

Pulse measurement per diode

0.1

0

0.2

0.4

0.6

0.8

1

1.2

1.4

Forward Voltage VF [V]

D2Fx
2.5

Forward Power Dissipation

SIN

Forward Power Dissipation PF [W]

2

1.5

1

0.5

0

0

0.5

1

1.5

2

2.5

Average Rectified Forward Current IO [A]

Tj = 150°C Sine wave

D2Fx
2.8

Derating Curve

Average Rectified Forward Current IO [A]

2.4

2

Alumina substrate Soldering land 2mm×2mm Conductor layer 20µm Substrate thickness 0.64mm

Glass-epoxy substrate Soldering land 2mm×2mm Conductor layer 35µm

1.6

1.2

0.8

Alumina substrate

0.4

Glass-epoxy substrate

0

0

20

40

60

80

100

120

140

160

Ambient Temperature Ta [°C]

Sine wave R-load Free in air

D2Fx
100

Peak Surge Forward Capability
IFSM
10ms 10ms

1 cycle

80

Peak Surge Forward Current IFSM [A]

non-repetitive, sine wave, Tj=25 °C before surge current is applied

60

40

20

0

1

2

5

10

20

50

100

Number of Cycles [cycles]