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Details, datasheet, quote on part number:D2F60
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| Part: | D2F60 |
| Category: | Discrete => Diodes & Rectifiers => General Purpose Rectifiers |
| Description: | General Purpose Rectifiers/ Single (Surface Mount) |
| Company: | Shindengen America, Inc. |
| Datasheet: | Download D2F60 datasheet File size : 166 kB |
| Request For quote: | Find where to buy D2F60
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Datasheet text preview:
SHINDENGEN
General Purpose Rectifiers
Single
D2F60
600V 1.4A
FEATURES High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source(Power Supply) Home Appliances, Office Equipment Telecommunication, Factory Automation
OUTLINE DIMENSIONS
Case : 2F (Unit : mm)
RATINGS
Absolute Maximum Ratings (If not specified Tl=25) Item Symbol Conditions Storage Temperature T stg Operati ng Junction Temperature Tj M axi mum Reverse Voltage VRM Average Rectified Forward Current 50Hz sine wave, R-load, Ta=25 On alumina substrate IO
50Hz sine wave, R-load, Ta=25 Peak Surge Forward Current On glass-epoxy substrate
I FSM
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25
Ratings -55`150 150 600 1.4 1.1 60
Unit V A A
Electrical Characteristics (If not specified Tl=25) Item Symbol Conditions Forward Voltage I F=1.4A, Pulse measurement VF Reverse Current IR VR=VRM , Pulse measurement
T hermal Resistance
Ratings M ax.1.05 M ax.10 M ax.24 M ax.90 M ax.120
Unit V ÊA /W
Æjl Æja Æja
juncti on to lead juncti on to ambient, juncti on to ambient, On alumina substrate On glass-epoxy substrate
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
D2Fx
Forward Voltage
10
Forward Current IF [A]
Tl=150°C [TYP] 1
Tl=25 °C [TYP]
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Forward Voltage VF [V]
D2Fx
2.5
Forward Power Dissipation
SIN
Forward Power Dissipation PF [W]
2
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
Average Rectified Forward Current IO [A]
Tj = 150°C Sine wave
D2Fx
2.8
Derating Curve
Average Rectified Forward Current IO [A]
2.4
2
Alumina substrate Soldering land 2mm×2mm Conductor layer 20µm Substrate thickness 0.64mm
Glass-epoxy substrate Soldering land 2mm×2mm Conductor layer 35µm
1.6
1.2
0.8
Alumina substrate
0.4
Glass-epoxy substrate
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
Sine wave R-load Free in air
D2Fx
100
Peak Surge Forward Capability
IFSM
10ms 10ms
1 cycle
80
Peak Surge Forward Current IFSM [A]
non-repetitive, sine wave, Tj=25 °C before surge current is applied
60
40
20
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
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