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Part: S1NB80
Category:
Discrete
-> Diodes & Rectifiers
-> General Purpose Rectifiers
Description: General Purpose Rectifiers/ Dip Bridges
Company: Shindengen America, Inc.
Datasheet: Download S1NB80 datasheet File size : 59 kB
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Datasheet text preview:
SHINDENGEN
General Purpose Rectifiers
SMT Bridges
S1NB80
800V 1A
FEATURES Small Dual In-Line(:DIL) Package 5 mm pitch between terminals Applicable to Automatic Insertion APPLICATION Switching power supply Home Appliances, Office Equipment Telecommuication, Factory Automation
OUTLINE DIMENSIONS
Case : 1N Unit : mm
RATINGS
Absolute Maximum Ratings (If not specified Tl=25) It em Symbol Conditions T stg Storage Temperature Tj Operati ng Junction Temperature VRM M aximum Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, On glass-epoxy substrate, Ta=25 I FSM Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 I 2t C urrent Squared Time 1mst10ms@T j=25 Electrical Characteristics (If not specified Tl=25) It em Symbol Conditions VF I F=0.5A , Pulse measurement, Rating of per diode Forward Voltage VR=VRM , Pulse measurement, Rating of per diode IR Reverse Current Æjl T hermal Resistance junction to lead Æja junction to ambient Ratin gs -40`150 150 800 1 30 4.5 Ratin gs M ax.1.05 M ax.10 M ax.15 Max.68 Unit V A A A 2s Unit V ÊA /W
Copyright & Copy;2002 Shindengen Electric Mfg.Co.Ltd
S1NBx
10
Forward Voltage
1
Forward Current IF [A]
Tl=150°C [TYP] Tl=25 °C [TYP]
0.1
Pulse measurement per diode
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
S1NBx
3
Forward Power Dissipation
Forward Power Dissipation PF [W]
2.5
SIN
2
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Average Rectified Forward Current IO [A]
Tj = 150°C Sine wave
Others parts begin by s1
S1-1 S1-2 S1-3 S1-4 S1-5 S1-6
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