Details, datasheet, quote on part number: AA028N1-00
CategoryRF & Microwaves => Amplifiers => LNA (Low Noise Amplifiers)
Description24 30 GHZ GAAS Mmic Low Noise Amplifier
CompanySkyworks Solutions, Inc.
DatasheetDownload AA028N1-00 datasheet
Find where to buy


Features, Applications

Single Bias Supply Operation 3.0 dB Typical Noise Figure at 28 GHz 17 dB Typical Small Signal Gain 0.25 m Ti/Pd/Au Gates 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection MT 2010


Skyworks' three-stage reactively-matched 2430 GHz MMIC low noise amplifier has typical small signal gain 17 dB with a typical noise figure at 28 GHz. The chip uses Skyworks' proven 0.25 m low noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.

Dimensions indicated in mm. All DC (V) pads are 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.

Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value +150C 6 VDC 10 dBm 175C

Parameter Drain Current Small Signal Gain Noise Figure Input Return Loss Output Return Loss Output Power 1 dB Gain Compression1 Two-Tone Output Third-Order Intercept1 Thermal Resistance2

1. Not measured a 100% basis. 2. Calculated value based on measurement of discrete FET. 3. Typical represents the median parameter value across the specified frequency range for the median chip.

Skyworks Solutions, Inc. [781] 376-3000 Fax [781] 376-3100 Email

Typical Gain and Noise Figure Performance vs. Drain Bias = VD2)
Typical Gain and Noise Figure Performance for Three Bias Conditions
Output Power and Relative Third-Order Intermodulation Products = 28 GHz, 4.5 V

For biasing on, adjust VDS from zero to the desired value (4.5 V recommended). For biasing off, reverse the biasing on procedure.


Some Part number from the same manufacture Skyworks Solutions, Inc.
AA028N1-A2 24 30 GHZ Surface Mount Low Noise...
AA028N2-00 25 32 GHZ GAAS Mmic Low Noise Pre-amplifier
AA028P1-00 27 29 GHZ GAAS Mmic Power Amplifier
AA028P2-00 27 31 GHZ GAAS Mmic Driver Amplifier
AA028P2-A2 25 31 GHZ Surface Mount Amplifier
AA028P3-00 27 31 GHZ GAAS Mmic Driver Amplifier
AA031P1-00 28 32 GHZ GAAS Mmic Driver Amplifier
AA031P1-A2 28 32 GHZ Surface Mount Driver Amp...
AA032P1-00 30 36 GHZ GAAS Mmic Power Amplifier
AA032P1-A4 29 32 GHZ Surface Mount Medium Power...
AA035N1_N2-00 28 36 GHZ GAAS Mmic Low Noise Amp...
AA035P3-00 31 35 GHZ GAAS Mmic Driver Amplifier...
AA038N1_N2-00 28 40 GHZ GAAS Mmic Low Noise Amp...
AA038N3-00 37 40 GHZ GAAS Mmic Low Noise Amplifier
AA038P1-00 36 39 GHZ GAAS Mmic Driver Amplifier
AA038P2-00 37 40 GHZ GAAS Mmic Driver Amplifier
AA038P5-00 37 39 GHZ GAAS Mmic Power Amplifier
AA100-59 GAAS ic 3 Bit Digital Attenuator 4 DB...
AA101-80 GAAS ic 5 Bit Digital Attenuator 1 DB...
AA102-80 GAAS ic 5 Bit Digital Attenuator 0.5...
AA103-72 GAAS ic 1 Bit Digital Attenuator 10 DB...
Same catergory

2SC4839 : Bipolar Transistors. Vceo (V) = 12 ;; Ic (mA) = 80 ;; PC (mW) = 100 ;; Cob (pF) = 0.85 ;; Cre (pF) = 0.6 ;; .fT(Typ.) (GHz) = 7 ;; Package = SSM ;; Application = UHF Lna.

AT-113 : Frequency 0.5-2 Ghz, 40dB,3V Voltage Variable Absorptive Attenuator. Single Positive Voltage Control to +3 Volts 40 dB Attenuation Range at 0.9 GHz 2 dB Linearity from BSL Low DC Power Consumption Low Cost SOIC-8 Plastic Package Tape and Reel Packaging Available M/A-COM's is a GaAs MMIC voltage variable absorptive attenuator in a low cost SOIC 8-lead surface mount plastic package. The AT-113 is ideally suited for use where.

CHA5293a-99F : Operational Frequency = 17-24GHz ;; Noise Figure = - ;; Gain = 18dB ;; Gain Control Range = - ;; Gain Flatness = 1dB ;; Sat. Output Power = 33dBm ;; P-1dB = 31dBm ;; Bias = 800mA@6V ;; Case = Die.

IP1527A : Regulating Pulse Width Modulators. INV. INPUT N. I. INPUT 2 SYNC 3 OSC. OUTPUT RT 6 DISCHARGE 7 SOFT START 8 to 35V operation 5.1V reference trimmed to 500kHz oscillator range Separate oscillator sync terminal Adjustable deadtime control Internal soft start Input undervoltage lockout Latching PWM to prevent multiple pulses Dual source/sink output drivers J Package 16 Pin Ceramic DIP N Package.

MF1173V-1 : Filter For GSM Mobile Telephone. 1. SMD package insures small size, lightweight. 2. Adjustment free. 3. Low insertion loss and high stop band attenuation. 4. Wide and sharp passband characteristics. 5. High stability and reliability. 6. Designed for reflow solderings. This SAW filter for the transmitting RF circuit of GSM mobile communication equipment operating at 890 MHz ~ 915 MHz.

PHM010 : Power RF Amplifiers. The is a two stage amplifier specifically designed military and commercial bandwidths. This amplifier can be used as a final stage for portable radio applications with output of 20Watts. Parameter DC supply Voltage 1 DC supply Voltage 2 Input Power Output Power Operating Case Temp. Storage Temp. Symbol Value Unit VDD2 0.04 Pin W 27 Pout +70 C Tstg o C Parameter.

RF2942 : UHF Quadrature Modulator And Transmitter. Typical Applications 915MHz ISM Band Products Digital Communications Quadrature Modulation Portable Battery-Powered Equipment The is an integrated power amplifier and quadrature modulator IC. The quadrature modulator is driven with a single-ended local oscillator (LO) source. The quadrature phase generation of the LO is accomplished using an internal.

SD1135-03 : VHF Transistors. VHF Portable/mobile Applications RF & Microwave Transistors.

TGA2902-SCC-SG : = 2 Watt Packaged Amplifier ;; Freq(GHz) = 13 to 17 ;; Power(dBm) = 34 ;; Gain(dB) = 26 ;; Nf/pae = - ;; +V = 7.5 ;; IQ(mA) = 650 ;; Status = Standard.

MRF21045 : RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used i n Class AB for PCN - PCS/cel lular radi o and WLL applications. Typical 2-carrier W-CDMA Performance for VDD = 28 Volts,.

PD55015-E : General ■ Excellent thermal stability ■ Common source configuration ■ POUT = 15W with 14dB gain @ 500MHz / 12.5V ■ New RF plastic package The PD55015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates.

HMC591LP5 : The HMC591LP5 is a high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifi er which operates from 6 to 10 GHz. This amplifi er die provides 24 dB of gain, +31.5 dBm of saturated power at 25% PAE from a +7.0V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip.

MRF24J40MB : MRF24J40MB Data Sheet MRF24J40MB is a 2.4 GHz IEEE 802.15.4 power radio transceiver module intended for longer range applications. The MRF24J40MB has an integrated PCB antenna, matching circuitry, and supports the ZigBee, MiWi and MiWi P2P protocols. The MRF24J40MB Module connects to hundreds of PIC microcontrollers via a 4-wire SPI interface and is an ideal.

SKY65404-31 : 5 GHz Low Noise Amplifier The SKY65404-31 is an ultra Low-Noise Amplifier (LNA) intended for 5 GHz wireless receiver applications. Its industry-leading Noise Figure (NF), together with high linearity, makes it ideal as a firststage LNA in 802.11a Wireless Local Area Network (WLAN) radios. Operating with a single supply voltage, the SKY65404-31 consumes.

0-C     D-L     M-R     S-Z