Single Bias Supply Operation 3.0 dB Typical Noise Figure at 28 GHz 17 dB Typical Small Signal Gain 0.25 µm Ti/Pd/Au Gates 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection MT 2010
Skyworks' three-stage reactively-matched 2430 GHz MMIC low noise amplifier has typical small signal gain 17 dB with a typical noise figure at 28 GHz. The chip uses Skyworks' proven 0.25 µm low noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.
Dimensions indicated in mm. All DC (V) pads are 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.
Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value +150°C 6 VDC 10 dBm 175°C
Parameter Drain Current Small Signal Gain Noise Figure Input Return Loss Output Return Loss Output Power 1 dB Gain Compression1 Two-Tone Output Third-Order Intercept1 Thermal Resistance2
1. Not measured a 100% basis. 2. Calculated value based on measurement of discrete FET. 3. Typical represents the median parameter value across the specified frequency range for the median chip.
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Typical Gain and Noise Figure Performance vs. Drain Bias = VD2)
Typical Gain and Noise Figure Performance for Three Bias Conditions
Output Power and Relative Third-Order Intermodulation Products = 28 GHz, 4.5 V
For biasing on, adjust VDS from zero to the desired value (4.5 V recommended). For biasing off, reverse the biasing on procedure.