Details, datasheet, quote on part number: AA028N2-00
PartAA028N2-00
CategoryRF & Microwaves => Amplifiers
Description25 32 GHZ GAAS Mmic Low Noise Pre-amplifier
CompanySkyworks Solutions, Inc.
DatasheetDownload AA028N2-00 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Single Bias Supply Operation 2.5 dB Typical Noise Figure at 26 GHz 28 dB Typical Small Signal Gain 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection MT 2010 Ideal for Ka Band SatCom and Point to Multi-Point Applications

Description

Skyworks' four-stage, reactively-matched GaAs MMIC amplifier has a typical small signal gain 28 dB with a typical noise figure 2.5 dB with > 14 dBm at 26 GHz. The device is ideal for Ka band SatCom and point to multi-point applications. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy or solder die attach process. The RF interface has been designed for high volume automatic bonding assembly, allowing for (2) 1.0 mil Au wire. All chips are screened for S-parameters, output power and noise figure prior to shipment for guaranteed performance.

Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value +150°C 6 VDC 10 dBm 175°C

Parameter Drain Current Small Signal Gain Noise Figure Input Return Loss Output Return Loss Output Power 1 dB Gain Thermal Resistance2

1. Not measured a 100% basis. 2. Calculated value based on measurement of discrete FET. 3. Typical represents the median parameter value across the specified frequency range for the median chip. V is applied to VD1 pad, V is applied to VD2 pad.

Skyworks Solutions, Inc. [978] 241-7000 Fax [978] 241-7906 Email sales@skyworksinc.com www.skyworksinc.com

Output Power and Relative Third-Order Intermodulation Products = 28 GHz, 5 V

For biasing on, adjust VDS from zero to the desired value VD2 is recommended). For biasing off, reverse the biasing on procedure.

Input: Two 1 mil wires 10 mils long. Output: Two 1 mil wires ± 5 mils long.

 

Some Part number from the same manufacture Skyworks Solutions, Inc.
AA028P1-00 27 29 GHZ GAAS Mmic Power Amplifier
AA028P2-00 27 31 GHZ GAAS Mmic Driver Amplifier
AA028P2-A2 25 31 GHZ Surface Mount Amplifier
AA028P3-00 27 31 GHZ GAAS Mmic Driver Amplifier
AA031P1-00 28 32 GHZ GAAS Mmic Driver Amplifier
AA031P1-A2 28 32 GHZ Surface Mount Driver Amp...
AA032P1-00 30 36 GHZ GAAS Mmic Power Amplifier
AA032P1-A4 29 32 GHZ Surface Mount Medium Power...
AA035N1_N2-00 28 36 GHZ GAAS Mmic Low Noise Amp...
AA035P3-00 31 35 GHZ GAAS Mmic Driver Amplifier...
AA038N1_N2-00 28 40 GHZ GAAS Mmic Low Noise Amp...
AA038N3-00 37 40 GHZ GAAS Mmic Low Noise Amplifier
AA038P1-00 36 39 GHZ GAAS Mmic Driver Amplifier
AA038P2-00 37 40 GHZ GAAS Mmic Driver Amplifier
AA038P5-00 37 39 GHZ GAAS Mmic Power Amplifier
AA100-59 GAAS ic 3 Bit Digital Attenuator 4 DB...
AA101-80 GAAS ic 5 Bit Digital Attenuator 1 DB...
AA102-80 GAAS ic 5 Bit Digital Attenuator 0.5...
AA103-72 GAAS ic 1 Bit Digital Attenuator 10 DB...
AA104-73 GAAS ic 1 Bit Digital Attenuator 32 DB...
AA105-86 GAAS ic 4 Bit Digital Attenuator 1 DB...
Same catergory

AA113-310 : Digital Attenuator. GAAS ic 6 Bit Digital Attenuator With. GaAs IC 6 Bit Digital Attenuator with Driver 0.5 dB LSB Positive Control DC­1 GHz Attenuation 0.5 dB Steps 31.5 dB With High Accuracy Single Positive Control (+5 V) for Each Bit Low DC Power Consumption CMOS Integrated Silicon Driver Designed for Use at IF Frequencies The a 6 bit, single positive control GaAs IC FET digital attenuator with driver. It is particularly.

AT006N3-00 : GAAS 30 DB ic Voltage Variable Dual. GaAs dB IC Voltage Variable Dual Control Attenuator DC­6 GHz 30 dB Range s Low DC Drain s Fast Switching s Capable of Meeting MIL-STD Requirements5 The AT006N3-00 chip is a GaAs FET MMIC non-reflective bridged "T" attenuator that provides over dB of "matched" attenuation. The input and output VSWR is less than 1.5:1 maximum under all attenuation values.

BX5304 : Frequency (MHz) = 5 - 200 ;; Gain (Typ/Min) (dB) = 19.5 / 18.5 ;; Noise Figure (Typ/Max) (dB) = 2.5 / 3 ;; P1dB Comp Point (Typ/Min) (dBm) = +10.5 / +9.5 ;; 3rd Order Intercept (Typ) (dBm) = +25 ;; 2nd Order Intercept (Typ) (dBm) = +33 ;; DC Power (Typ) (V/mA) = +15 / +24 ;; Package = Package = Package = 4 Pin TO-8 Package = Surface Mount Package = Flatpack.

DS-409-4 :  Four-Way Power Splitter/Combiner, 10 - 2000MHz. Dimensions ( ) are in mm. Unless Otherwise Noted:.xxx ± 0.015 (.x ± 0.4) Weight (Approx): 10.58 ounces 300 grams MIL-STD-202 screening available. * All s apply with 50 ohm source and load impedance. AMP and Connecting at a Higher Level are trademarks. s subject to change without notice. .

HMC422MS8 : Low LO, Dbl-bal. Integrated LO Amplifier w/ Pdiss <100 mW Conversion Loss / Noise Figure: 8.0 dB Low LO Drive: 0 dBm Input IP3: +15 dBm Single Positive Supply: 30 mA Typical Applications MMDS & ISM Wireless Local Loop WirelessLAN Cellular Infrastructure The is a double balanced mixer IC with an integrated LO amplifier. This mixer can operate as an upconverter or downconverter.

MAALGM0002-DIE :  8.0 - 12.0 GHZ Low Noise Amplifier. 2.3 dB Noise Figure 8.0-12.0 GHz Operation Self-Aligned MSAG® MESFET Process Variable Voltage Operation (Vd = 3-5V) The MAALGM0002-DIE is single-ended, 2-stage, X-band low noise amplifier. This product is fully matched to 50 ohms on both the input and output. Each device 100% RF tested on wafer to ensure performance compliance. The part is fabricated.

MDS-222 :  Surface Mount Double-balanced Mixer, 200 KHZ - 200 MHZ. n Fully Hermetic Package n Three Decade Coverage n Impedance: 50 Ohms Nominal n Maximum Input Power: 400 mW Max @ 25°C, Derated n linearly @ 3.2 mW/°C X-Port Current: 50 mA Max. MIL-STD-883 Screening Available Transformers convert the LO and RF paths to balanced lines connecting to a low barrier, Schottky diode ring quad. These transformers help provide.

MGFC5217 : Ka-band 3-stage Self Bias Noise Amplifier. Notice : This is not a final Some parametric limits are subject to change. The is a GaAs MMIC chip especially designed for ~ 19.0 GHz band Middle Power Amplifier (MPA). Limits Symbol Vp2 P3dB Gain Input Return Loss Output Return Loss Parameter Drain Saturation Current Drain Saturation Current Pinch Off Voltage Pinch Off Voltage Output Power 3 dB Compression.

PD10-0040-S :  Two-Way Power Divider. Space Qualified version of DS-109 Designed to meet the Stringent Reliability Standards of Space Hardware 50 Ohms Nominal Impedance 35 dB Midband Isolation 1.1:1 Midband VSWR M/A-COM's is a Two-Way Power Divider designed to operate between 10 and 500 MHz Parameter Max. Input Power Operating Temperature Storage Temperature Absolute Maximum 1 Watt Max.

RFP-20N50TPR : = Terminations ;; Size LXWXH = 0.25 X 0.515 X 0.15" ;; Packaging = Flanged ;; Frequency MHZ = 0-4000 ;; Power Handling Watts = 20.

S-AU50L : Power Modules. Package Dimensions = 5-23E ;; Output Power po (W) = 7 ;; Input Power pi (W) = 0.05 ;; Frequency Range .f (MHz) = 400 to 430 ;; VCC (V) = 4/9.6 ;; Applications = Business.

TGA2904-EPU-FL : = Packaged Ku-band Hpa ;; Freq(GHz) = 13 to 17 ;; Power(dBm) = 33 ;; Gain(dB) = 33 ;; Nf/pae = - ;; +V = 7 ;; IQ(mA) = 680 ;; Status = Standard.

TIM5964-35SLA : C-Band Power GaAs IMFETs. Frequency Band (GHz) = 5.9-6.4 ;; P1dB (dBm) = 45.5 ;; G1dB (dB) = 9.0 ;; P.A.E. (%) Typ. = 39 ;; VDS (V) = 10 ;; Ids (A) Typ. = 8.0 ;; IM3 (dBc) Typ. = -45 ;; RTH ( C/W) Typ. = 1.0 ;; Additional Information =  .

UPC3215TB : 5V, Super Minimold si Mmic Wideband Amplifier(518). NOISE FIGURE: 2.3 dB TYP = 1.5 GHz POWER GAIN: 20.5 dB TYP = 1.5 GHz SUPPLY VOLTAGE: VCC 5.5 V HIGH DENSITY SURFACE MOUNTING: 6-pin super mini-mold package The is a Silicon Monolithic IC designed as a wideband amplifier. The UPC3215TB is suitable for systems requiring wideband operation from to L band. This IC is manufactured using NEC's 30 GHz fmax.

ZA4PD-2 : Power Splitter. Power Splitter. Denotes 75 Ohm model, for coax connector models 75 Ohm BNC connectors are standard. When for only M range given, applies to entire frequency range. Available only with SMA connectors. At low range frequency band (fL to 10fL), linearly derate maximum power by 13 dB. Maximum VSWR: input 1.5:1, output 1.3:1 General Quality Control Procedures, Environmental.

BGY288 : Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 and PCS1900 The BGY288 is a power amplifier module in a SOT775 surface mounted package with a plastic cap. In the module, a mix of state of the art technologies as InGaP, Si-Bicmos and Si passive integration are used to combine high performance with a small size. The module comprises.

CM1400-03 : The CM1400-03 is a six channel low-pass filter array that reduces EMI/RFI emissions while at the same time providing ESD protection. It is used on data ports on mobile devices. To reduce EMI/RFI emissions, the CM1400-03 integrates a pi-style filter (C-R-C) for each of the 6 channels. Each high quality filter provides greater than 30dB attenuation in the 800-2700.

RI-TRP-R9QL-20 : Texas Instruments’ 30 mm disk transponder provides superior performance and operates at a resonance frequency of 134.2 kHz. Specific products are compliant to ISO/IEC 11784/11785 global open standards. Texas Instruments LF transponders are manufactured with TI’'s patented tuning process to provide consistent read and write performance. Prior to delivery,.

RLM-33+ : Limiter 30 To 3000 MHz Limiter 30 to 3000 MHz. Wide Frequency range to 3000 MHzExcellent limiting beyond +12 dBm input powerVery quick recovery time, 10 nsec Low insertion loss, 0.23 dB The RLM-33+ is packaged in a miniature size X 0.3 in.) and protects against ESD and input power surges over a frequency range to 3000 MHz. Construction on a micro strip low loss dielectric material and cased into.

 
0-C     D-L     M-R     S-Z