Single Bias Supply Operation 2.5 dB Typical Noise Figure at 26 GHz 28 dB Typical Small Signal Gain 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection MT 2010 Ideal for Ka Band SatCom and Point to Multi-Point Applications
Skyworks' four-stage, reactively-matched GaAs MMIC amplifier has a typical small signal gain 28 dB with a typical noise figure 2.5 dB with > 14 dBm at 26 GHz. The device is ideal for Ka band SatCom and point to multi-point applications. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy or solder die attach process. The RF interface has been designed for high volume automatic bonding assembly, allowing for (2) 1.0 mil Au wire. All chips are screened for S-parameters, output power and noise figure prior to shipment for guaranteed performance.
Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value +150°C 6 VDC 10 dBm 175°C
Parameter Drain Current Small Signal Gain Noise Figure Input Return Loss Output Return Loss Output Power 1 dB Gain Thermal Resistance2
1. Not measured a 100% basis. 2. Calculated value based on measurement of discrete FET. 3. Typical represents the median parameter value across the specified frequency range for the median chip. V is applied to VD1 pad, V is applied to VD2 pad.
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Output Power and Relative Third-Order Intermodulation Products = 28 GHz, 5 V
For biasing on, adjust VDS from zero to the desired value VD2 is recommended). For biasing off, reverse the biasing on procedure.
Input: Two 1 mil wires 10 mils long. Output: Two 1 mil wires ± 5 mils long.