Single Bias Supply Operation 19 dB Typical Small Signal Gain 16 dBm Typical P1 dB Output Power at 28 GHz 0.25 µm Ti/Pd/Au Gates 100% On-Wafer RF and DC Testing 100% Visual Inspection MT 2010
Skyworks' three-stage reactively-matched 2832 GHz GaAs MMIC driver amplifier has typical small signal gain 19 dB with a typical of 16 dBm at 28 GHz. The chip uses Skyworks' proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for gain, output power and S-parameters prior to shipment for guaranteed performance. Designed for 2832 GHz LMDS and digital radio bands.
Dimensions indicated in mm. All DC (V) pads are 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.
Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value +150°C 7 VDC 16 dBm 175°C
Parameter Drain Current Small Signal Gain Input Return Loss Output Return Loss Output Power 1 dB Gain Compression Saturated Output Power Two-Tone Output Third-Order Intercept1 Thermal = 2832 GHz = 2832 GHz = 2832 GHz = 28 GHz = 28 GHz = 28 GHz Condition Symbol IDS G RLI RLO P1 dB PSAT 15 17 Min. Typ.3 Max. 200 Unit mA dB dBm °C/W
1. Not measured a 100% basis. 2. Calculated value based on measurement of discrete FET. 3. Typical represents the median parameter value across the specified frequency range for the median chip.
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Typical Small Signal Performance S-Parameters (VDS 5 V)
Output Power and Relative Third-Order Intermodulation Products = 28 GHz, VDS 5 V
For biasing on, adjust VDS from zero to the desired value (5 V recommended). For biasing off, reverse the biasing on procedure.