Details, datasheet, quote on part number: AA038P2-00
CategoryRF & Microwaves => Amplifiers => Driver Amplifiers
Description37 40 GHZ GAAS Mmic Driver Amplifier
CompanySkyworks Solutions, Inc.
DatasheetDownload AA038P2-00 datasheet
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Features, Applications

Single Bias Supply Operation 13 dB Typical Small Signal Gain 14 dBm Typical P1 dB Output Power at 38 GHz 0.25 m Ti/Pd/Au Gates 100% On-Wafer RF and DC Testing


Skyworks' two-stage reactively-matched 3740 GHz GaAs MMIC driver amplifier has typical small signal gain 13 dB with a typical of 14 dBm at 38 GHz. The chip uses Skyworks' proven 0.25 m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for gain, output power and S-parameters prior to shipment for guaranteed performance.

Dimensions indicated in mm. All DC (V) pads are 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.

Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value +150C 7 VDC 16 dBm 175C

Parameter Drain Current Small Signal Gain Input Return Loss Output Return Loss Output Power 1 dB Gain Compression Saturated Output Power Two-Tone Output Third-Order Thermal Resistance2

1. Not measured a 100% basis. 2. Calculated value based on measurement of discrete FET. 3. Typical represents the median parameter value across the specified frequency range for the median chip.

Skyworks Solutions, Inc. [978] 241-7000 Fax [978] 241-7906 Email

Typical Small Signal Performance S-Parameters (VDS 5 V)
Output Power and Relative Third-Order Intermodulation Products = 38 GHz, VDS 5 V

For biasing on, adjust VDS from zero to the desired value (5 V recommended). For biasing off, reverse the biasing on procedure.


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