|Category||RF & Microwaves => Attenuators => Digital Attenuator|
|Description||GAAS ic 5 Bit Digital Attenuator With...|
|Company||Skyworks Solutions, Inc.|
|Datasheet||Download AA117-85 datasheet
|GaAs IC 5 Bit Digital Attenuator with Driver 1 dB LSB Positive Control DC2 GHz
Attenuation 1 dB Steps 31 dB With High Accuracy Single Positive Control +5 V) for Each Bit Low DC Power Consumption CMOS Integrated Silicon Driver, Positive and Negative Supplies Required Designed for Use at IF Frequencies High Noise Linearity @ PIN < -10 dBmDescription
The a 5 bit, single positive control GaAs IC FET digital attenuator with driver. It is particularly suited at IF frequencies where high attenuation accuracy, low insertion loss and low intermodulation products are required. Typical applications include base station, wireless data, broadband and wireless local loop gain control circuits. For single supply design and higher input signal levels, see AA110-85.
Skyworks Solutions, Inc.  376-3000 Fax  376-3100 Email email@example.com www.skyworksinc.com
Parameter1 Insertion Loss2 Condition Frequency DC0.5 GHz DC1.0 GHz DC2.0 GHz DC0.5 GHz DC1.0 GHz DC2.0 GHz VSWR (I/O)4 Switching Characteristics5 Rise, Fall or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru VCC +5 V, VSS -3 V For Two-tone Input Power +5 dBm VCC +5 V VCC VSS VCC 5 V, VSS -3 V VCC 3 V, VSS -3 V VCC 5 V, VSS CTL16 = Logic CTL16 = Logic GHz 0.05 GHz 0.52.0 GHz 0.05 GHz DC2.0 GHz Min. Typ. of Attenuation Setting in dB) of Attenuation Setting in dB) of Attenuation Setting in dB) ns mV dBm mA V Max. 2.1 2.6 Unit dB
Input Power for 1 dB Compression Intermodulation Intercept Point (IP3) Supply Voltages6 Supply Currents Control Voltages7
1. All measurements made a 50 system, unless otherwise specified. 2. Insertion loss changes by 0.003 dB/°C. 3. Attenuation referenced to insertion loss. 4. Input/output.
5. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth. 6. VCC must be supplied prior to VSS. 7. Control voltage must not exceed VCC.
|Some Part number from the same manufacture Skyworks Solutions, Inc.|
|AA210-25 GAAS ic 4 Bit Digital Attenuator 1 DB...|
|AA220-25 GAAS ic 4 Bit Digital Attenuator 2 DB...|
|AA226-87 GAAS ic 4 Bit Digital Attenuator 1 DB...|
|AA230-24 GAAS ic 3 Bit Digital Attenuator 4 DB...|
|AA260-85 GAAS ic 5 Bit Digital Attenuator 1 DB...|
|AA264-87 GAAS ic 4 Bit Digital Attenuator 2 DB...|
|AA280-25 GAAS ic 5 Bit Dig Attenuator 0.5 DB...|
|AA310-25 GAAS ic 4 Bit Digital Attenuator 1 DB...|
|AA320-25 GAAS ic 4 Bit Digital Attenuator 2 DB...|
|AB006M2-11 GAAS ic SPDT Non-reflective Switch...|
|AB026P2-14 25 28 GHZ Amplifier|
|AB028H1-14 23 30 GHZ High Gain Amplifier|
|AB028V1-14 23 30 GHZ Variable Gain Amplifier|
|AB038H1-14 36 41 GHZ High Gain Amplifier|
|AE002M2-29_53 GAAS ic Sp2t Non-reflective...|
|AE002M4-05 GAAS ic SP4T Non-Reflective...|
|AE002M6-77 GAAS ic SP6T Non-reflective Switch...|
|AF002C1-39 GAAS ic Control Fet Series...|
|AF002N2-32 GAAS ic 15 DB Voltage Variable Attenu...|
|AFM04P2-000 ka Band Power GAAS MesFET Chip|
1SV102 : VR (v) = 30 ;; Ir (nA) = 50 ;; CT(1) (pF) = 360 to 460 ;; CT(2) (pF) = 15 to 21 ;; CT(1)/CT(2) = - ;; .rs(Typ.) Ohms = - ;; Package = Mini ;; Application = am Tuning.
4E3305 : Power Dividers. = Xinger In-phase Power Dividers ;; Size LXWXH = 0.65 X 0.48 X 0.09" ;; Packaging = Surface Mount ;; Frequency MHZ = 1100-1300 ;; Power Handling Watts =.
CC1010 : The Industry's First Integrated 300-1000 MHZ RF Transceiver And Microcontroller.
D332LS : Power Dividers. = Power Dividers, 2 Way ;; Freq. Range = Dc-18 GHZ. This 2 Way Power Divider has a Male Type N connector for the input and two Female Type N connectors for the output. This makes it ideal for drop in power dividing applications. Designed to robust military this divider operates from 750 MHz to 1200 MHZ which is perfect for Cellular Telecommunication frequencies. Frequency Divider Loss Isolation VSWR.
H-9 : Hybrid Junction Coupler. - 180° Hybrid with 10 Octave Bandwidth 30 dB Minimum Isolation Low VSWR Impedance: 50 Ohms Nom. Input Power: 2-20 MHz: 5 W. Max. 20-2000 MHz: 25 W. Max. MIL-STD-883 Screening Available Frequency Range Insertion Loss (Less Coupling) * All s apply with 50 ohm source and load impedance. This product contains elements protected by United States Patent Number.
LG30 : Drivers. TO-8 Thin-film Linearizer For The G30. TO-8 THIN-FILM LINEARIZER FOR THE G30 WIDE TEMPERATURE OPERATION YIELDS LINEAR ATTENUATION (dB) FOR LINEAR CONTROL VOLTAGE -V +V Vcon Combination of LG30 and -V +V Vcon Control Voltage 0 V (Max. Attenuation) 6 mA Control Voltage 15 V (Min. Attenuation) 12 mA Storage Temperature Max. Case Temperature Max. DC Voltage "S" Series Burn-in Temperature (Case).
LP7512P70 : Packaged Ultra Low Noise Phemt. PACKAGED ULTRA LOW NOISE PHEMT 0.7 dB Noise Figure at 12 GHz 12 dB Associated Gain at 12 GHz 0.4 dB Noise Figure at 2 GHz 18 dB Associated Gain at 2 GHz Low DC Power Consumption: 30mW AND APPLICATIONS The is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing.
PS-3-500F : Power Dividers. 3 Way Power Divider/combiner.
RF2196 : LNAs. 3V, PCS Linear Power Amplifier. Typical Applications 3V CDMA PCS Handsets 3V CDMA KPCS Handsets 3V TDMA/GAIT PCS Handsets 3 V CDMA 2000 PCS Handsets Spread-Spectrum Systems Portable Battery-Powered Equipment The is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide process, and has been designed.
SD1731 : HF Transistors. HF SSB Applications RF& Microwave Transistors. OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT 220 W PEP WITH 13 dB GAIN The 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 °C) Collector-Base Voltage.
TO-222 : Z RATIO: 50 Ohm Unbal/200 Ohm Unbal.
MRF1570NT1 : RF Power Field Effect Transistors N-Channel Enhancement -Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen- cies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applica- tions in 12.5 volt mobile FM equipment..
HMC734LP5 : VCO With Divide-by-4, 8.6 - 10.2 GHz The HMC734LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC734LP5(E) integrates a resonator, negative resistance device, varactor diode and a divide-by-4 frequency output. The VCO\'s phase noise performance is excellent over temperature, shock, and process due to the oscillator\'s monolithic.
ADG5234 : High Voltage Latch-Up Proof, Quad SPDT Switches The ADG5233 and ADG5234 are monolithic industrial CMOS analog switches comprising three independently selectable single-pole, double throw (SPDT) switches and four independently selectable SPDT switches, respectively..