Details, datasheet, quote on part number: AK002M2-12
CategoryRF & Microwaves => Switches
DescriptionGAAS ic SPDT Switch With Integral...
CompanySkyworks Solutions, Inc.
DatasheetDownload AK002M2-12 datasheet
Find where to buy


Features, Applications
GaAs IC SPDT Switch With Integral Driver Non-Reflective DC2.5 GHz

Low DC Current 4 mA Total Non-Reflective Integral Driver 5 V Supply Voltages Low Cost SOIC-8 Plastic Package


The GaAs FET IC SPDT non-reflective switch with integral driver is offered in the SOIC-8 package. These devices are useful as modulators as well as switches in instrumentation and telecommunications applications. The integral driver simplifies the external drive circuit, thus saving PC board space and reducing component count.

Parameter Switching Characteristics5 Condition Rise, Fall or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru 0.52.0 GHz 0.05 GHz For Two-tone Input Power +13 dBm VLow (0) VHigh 1 mA Typ. 4 mA Typ. 0.52.0 GHz 0.05 GHz Frequency Min. Typ. Max. Unit ns mV dBm

Input Power for 1 dB Compression Intermodulation Intercept Point (IP3) Logic Drives Supply Voltages6,7

1. All measurements made a 50 system, unless otherwise specified. = 300 kHz. 3. Insertion loss changes by 0.003 dB/C. 4. Insertion loss state. 5. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.

6. Supply voltage must be connected before control voltage is applied. Use of toggle switches or other similar components may produce voltage spikes which can cause irreversible damage to the device. 7. Current increases from at +85C.

Skyworks Solutions, Inc. [978] 241-7000 Fax [978] 241-7906 Email

0 J1J2 Insertion Loss Isolation J1J3 Isolation 3 Insertion Loss
DC blocking capacitors (CBL) must be supplied externally. CBL 100 pF for operation >500 MHz.


Some Part number from the same manufacture Skyworks Solutions, Inc.
AK002M4-47 GAAS ic SP4T Non-ref Switch With...
AK100-25 GAAS ic 4 Bit Dig Atten With Driver...
AK115-61 GAAS ic SP4T Non-ref Switch With...
AK802D4-24 GAAS ic 4 Bit Dig Atten With Driver...
AL106-84 GAAS ic 900 MHZ High Dynamic Range Amp...
AL107-84 GAAS ic 1800 Mhzhigh Dynamic Range Amp...
AL108-338 GAAS Phemt Switchable Gain Lna
AM026H1-00 24.5 32 GHZ GAAS Mmic Sub-Harmonic...
AM026S1-00 23 33 GHZ GAAS Mmic Fundamental...
AM028D1-00 26 33 GHZ GAAS Mmic Double Balanced...
AM028D1-A2 26 33 GHZ Surface Mount Double...
AM028S1-00 26 33 GHZ GAAS Mmic Single Balanced...
AM028S1-A2 26 33 GHZ Surface Mount Single...
AM038D1-00 33 43 GHZ GAAS Mmic Double Balanced...
AM038S1-00 33 43 GHZ GAAS Mmic Single Balanced...
AM100-73 DC/DC Converter
AM107 Dual-band GAAS ic Antenna Switch Module
AM108-603 Triple-band GAAS ic Antenna Switch...
AM109-502 Cdma Split Band Switch Module Adv...
Same catergory

856079 : = Filter - DCS (Rx) ;; Frequency (MHz) = 1842.5 ;; Bandwidth (MHz) = 75.0 ;; Insertion Loss (dB) = 3.5 Max ;; Modes of Operation = Se/bal 200 Ohm ;; Package (mm) = 2.5 X 2.0.

AA230-24 : Digital Attenuator. GAAS ic 3 Bit Digital Attenuator 4 DB. Attenuation 4 dB steps 28 dB with High Accuracy Low Cost SOIC-14 Plastic Package Low DC Power Consumption The an IC FET digital attenuator consisting of three monolithic attenuators with LSB 4 dB and a total attenuation 28 dB with all attenuators connected. Attenuators are switched with -5 and 0 V. The AA230-24 is particularly suited where high attenuation.

AM1214-325 : L-Band Radar Transistors. L-band Radar Applications RF & Microwave Transistors.

HMC408LP3 : Power Amp. GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, - 5.9 GHz Gain: 20 dB Saturated Power: +32.5 dBm @ 27% PAE Single Supply Voltage: +5.0 V Power Down Capability 3x3 mm Leadless SMT Package Typical Applications The HMC408LP3 is ideal for: 802.11a & HiperLAN WLAN UNII & Pt-Pt / Multi-Pt. Radios Access Point Radios The - 5.9 GHz high efficiency GaAs InGaP Heterojunction.

MHL9318 : Base Station Module Pre-drivers. MHL9318 860-900 Mhz, 3 W, 17.5 DB RF Linear Ldmos Amplifier.

MHW1345 : Modules. MHW1345 10-200 Mhz, 34.5 DB, 800 MW General Purpose Linear Amplifier Module.

RFP-40N50TPC : = Terminations ;; Size LXWXH = 0.25" X 0.515" X 0.148" ;; Packaging = Flanged ;; Frequency MHZ = 0-4000 ;; Power Handling Watts = 40.

S-AV23A : RF Power Amplifier Module.

TML9002 : Frequency Range (MHz) Min = 50 ;; Frequency Range (MHz) Max = 500 ;; Gain (dB) TYP = 12.6 ;; Gain (dB) Min = 11.0 ;; Input Power Limiting Range (dBm) = 0 to +20 ;; Output Level Saturated (dBm) TYP = +12 ;; Output Level Saturated (dBm) Min = +7 ;; Output Power Flatness (dB) Max = 0.7 ;; Noise Figure (dB) Max = 9.0 ;; VSWR In/out Max = 2.0:1 ;; Power.

TQ8004 : Digital Cross Point Switch. = 4x4 Digital Cross Point Switch ;; Data Rate = 2.7 Gb/s ;; I/o = Lvpecl ;; Power Supply = +3.3V ;; Status = Standard.

ZHL-03-5WF : Amplifier. * +28.5 dBm maximum at 1000-1200 MHz +27 dBm at 10-700 MHz Below 100 MHz NF increases at 10 MHz Q Below 100 MHz NF increases at 10 MHz N Measured +25C, +30 dBm typ. at 54C amb. H WHILE SUPPLIES LAST 1.5 dB over temperature range to +65 deg. C. +37 dBm typical High IP3, very high IP2, 68-83 dBm typ. Hermetically sealed with field replaceable connectors.

AWT6307 : CDMA Power Amplifiers The AWT6307 meets the increasing demands for higher efficiency and smaller footprint CDMA 1X handsets. The package pinout was chosen to enable handset manufacturers to switch from a 4 mm x 4 mm PA module with few layout changes while reducing board area requirements by 44 %. The AWT6307 uses ANADIGICS\' exclusive InGaP-Plus technology,.

MW7IC2725NR1 : RF Power Field Effect Transistors N-Channel Enhancement -Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications..

HMC679LC3C : 26 GHz, T Flip-Flop W/RESET & Programmable Output Voltage The HMC679LC3C is a T Flip-Flop w/Reset designed to support clock frequencies as high as 26 GHz. During normal operation, with the reset pin not asserted, the output toggles from its prior state on the positive edge of the clock. This results in a divide-by-two function of the clock input. Asserting.

PMFPB6532UP : 20 V, 3.5 A / 320 MV VF P-channel MOSFET-Schottky Combination Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package..

0-C     D-L     M-R     S-Z