Details, datasheet, quote on part number: 269XC009
Part269XC009
CategoryDiscrete => Transistors => Bipolar => Power => General Purpose
DescriptionVceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 102
CompanySolitron Devices, Inc.
DatasheetDownload 269XC009 datasheet
  
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269XC010
269XC011
269XC012
269XC013
Some Part number from the same manufacture Solitron Devices, Inc.
269XC010 Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 102
271XC001 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 104
288XC001 Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = 90 ;; @ ic Amps = 10.00 ;; Page No. = 106
289XC001 Vceomin. Volts = 100 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 90.00 ;; Page No. = 108
290XC001 Vceomin. Volts = 80 ;; Hfemin. = 10 ;; Hfemax. = - ;; @ ic Amps = 100.00 ;; Page No. = 108
2M2880 Description = Space Flight Power Transistors Esc/scc ;; Control Drawing = 5203/025-02B ;; Vcbo Bolts = 150 ;; Vceo Bolts = 100 ;; Es/bmillijoule = 1.00 ;; Ic (CONT.) Max. = 5.0 ;; Power @ 100 C. Watts
2M3575 Description = Low Power Field Effect Transistor ;; Case Style = TO-72 ;; Geometry = FP22.2 ;; Bvdgoor BFGSS Min (V) = 25 ;; Cissmax (pF) = 6 ;; Vgs(off) Min (V) = 1.0 ;; Vgs(off) Max (V) = 4.0 ;; Lgssmax
2N1616 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 72
2N1618 Vceomin. Volts = 80 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 66
2N1718 Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 78
2N1724 Vceomin. Volts = 80 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 66
2N2150 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 70
2N2386 Description = Low Power Field Effect Transistor ;; Case Style = TO-5 ;; Geometry = FP5.3 ;; Page Number = E52+E53
2N2606 Description = Low Power Field Effect Transistor ;; Case Style = TO-72 ;; Geometry = FP22.2 ;; Bvdgoor BFGSS Min (V) = 25 ;; Cissmax (pF) = 6 ;; Vgs(off) Min (V) = 1.0 ;; Vgs(off) Max (V) = 4.0 ;; Lgssmax
2N2607 Description = Low Power Field Effect Transistor ;; Case Style = TO-5 ;; Geometry = FP5.3 ;; Page Number = E52+E53
2N2632 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 70
2N2655 Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 78
2N2657 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 70
2N2811 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 72
2N2823 Description = Low Power Field Effect Transistor ;; Case Style = TO-72 ;; Geometry = FP22.2 ;; Bvdgoor BFGSS Min (V) = 25 ;; Cissmax (pF) = 6 ;; Vgs(off) Min (V) = 1.0 ;; Vgs(off) Max (V) = 4.0 ;; Lgssmax
2N2842 Description = Low Power Field Effect Transistor ;; Case Style = TO-5 ;; Geometry = FP5.3 ;; Page Number = E52+E53

144XC003 : Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 10.00 ;; Page No. = 62

184XC005 : Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 70

MPF112 : Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 8.0 ;; Crssmax (pF) = 4.0 ;; Vgs(off)min (V) = - ;; Vgs(off)max (V) = 8.0 ;; Lgssmax (nA) = 2.00 ;; Ylsmin (uMhos) = 1600.0 ;; "@Freq (MhZ) = 100 ;; Idssmi

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SDF9N100GAFVHD1B : 9 A, 1000 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1000 volts ; rDS(on): 1.4 ohms ; Number of units in IC: 1

SDS10100JDAEND1 : 10 A, 100 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 10000 mA ; VRRM: 100 volts

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SDS30045JEDZKU1 : 30 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 30000 mA ; Pin Count: 3 ; Number of Diodes: 2

 
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