Details, datasheet, quote on part number: 2N3749JANTXTXV
Part2N3749JANTXTXV
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionMil-s- 19500/ = 315 ;; Vcbo Volts = 110 ;; Vceo Volts = 80 ;; Ic (CONT.) Amps = 5.0 ;; Power (@TC =25 C) Watts = 30 ;; = ;; Case Type = TO-111/I ;; Chip Type = 184
CompanySolitron Devices, Inc.
 
  
Some Part number from the same manufacture Solitron Devices, Inc.
2N3750 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 70
2N3766 Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 78
2N3774
2N3788 Vceomin. Volts = 200 ;; Hfemin. = 10 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 60
2N3789 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 2.50 ;; Page No. = 98
2N3819 Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 8.0 ;; Crssmax (pF) = 4.0 ;; Vgs(off)min (V) = - ;; Vgs(off)max
2N3820 Description = Low Power Field Effect Transistor ;; Case Style = TO-5 ;; Geometry = FP5.3 ;; Page Number = E52+E53
2N3821 Description = Low Power Field Effect Transistor ;; Case Style = TO18 ;; Geometry = FN3.6 ;; Page Number = E32+E33
2N3823 Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 8.0 ;; Crssmax (pF) = 4.0 ;; Vgs(off)min (V) = - ;; Vgs(off)max
2N3824 Description = Low Power Field Effect Transistor ;; Case Style = TO18 ;; Geometry = FN3.6 ;; Page Number = E32+E33
2N3846 Vceomin. Volts = 80 ;; Hfemin. = 10 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 46
2N3846JANTX Mil-s- 19500/ = 412 ;; Vcbo Volts = 300 ;; Vceo Volts = 200 ;; Ic (CONT.) Amps = 20.0 ;; Power (@TC =25 C) Watts = 150 ;; = ;; Case Type = TO-63 ;; Chip Type = 114
2N3847 Vceomin. Volts = 80 ;; Hfemin. = 10 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 46
2N3847JANTX Mil-s- 19500/ = 412 ;; Vcbo Volts = 400 ;; Vceo Volts = 300 ;; Ic (CONT.) Amps = 20.0 ;; Power (@TC =25 C) Watts = 150 ;; = ;; Case Type = TO-63 ;; Chip Type = 114
2N3848 Vceomin. Volts = 80 ;; Hfemin. = 10 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 46
2N3850 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 70
2N3902 Vceomin. Volts = 200 ;; Hfemin. = 10 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 60
2N3902JANTX Mil-s- 19500/ = 371 ;; Vcbo Volts = 700 ;; Vceo Volts = 400 ;; Ic (CONT.) Amps = 3.5 ;; Power (@TC =25 C) Watts = 100 ;; = ;; Case Type = TO-3 ;; Chip Type = 142
2N3909 Description = Low Power Field Effect Transistor ;; Case Style = TO-5 ;; Geometry = FP5.3 ;; Page Number = E52+E53
2N3917 Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 78
2N3918 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 70

KS4224 : Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 8.0 ;; Crssmax (pF) = 4.0 ;; Vgs(off)min (V) = - ;; Vgs(off)max (V) = 8.0 ;; Lgssmax (nA) = 2.00 ;; Ylsmin (uMhos) = 1600.0 ;; "@Freq (MhZ) = 100 ;; Idssmi

SDF11N90GAFXHU1Z : 11 A, 900 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 900 volts ; rDS(on): 0.9500 ohms ; Number of units in IC: 1

SDF21N60GAFVGD1B : 21 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 0.3000 ohms ; Number of units in IC: 1

SDF3N90JABXHSN : 3 A, 900 V, 4.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 900 volts ; rDS(on): 4.6 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF9140JAAXGU1Z : 19 A, 100 V, 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.2100 ohms ; Number of units in IC: 1

SDFC40JAAVHU1Z : 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 1.2 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDS10045JAAVJU1 : 10 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 10000 mA ; VRRM: 45 volts

SDS10100JFBVMU : 10 A, 100 V, SILICON, RECTIFIER DIODE Specifications: Arrangement: Common Anode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 10000 mA ; Pin Count: 3 ; Number of Diodes: 2

SDS20045JAAVJD : 20 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 20000 mA ; VRRM: 45 volts

SDS20045JEAEKD : 20 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 20000 mA ; VRRM: 45 volts

SDS30045JABWJD1 : 30 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 30000 mA ; VRRM: 45 volts

SDS30045JEDWLU : 30 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 30000 mA ; Pin Count: 3 ; Number of Diodes: 2

 
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