Details, datasheet, quote on part number: 2N3780
Part2N3780
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionVceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 102
CompanySolitron Devices, Inc.
DatasheetDownload 2N3780 datasheet
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Some Part number from the same manufacture Solitron Devices, Inc.
2N3781 Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 102
2N3788 Vceomin. Volts = 200 ;; Hfemin. = 10 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 60
2N3789 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 2.50 ;; Page No. = 98
2N3819 Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 8.0 ;; Crssmax (pF) = 4.0 ;; Vgs(off)min (V) = - ;; Vgs(off)max
2N3820 Description = Low Power Field Effect Transistor ;; Case Style = TO-5 ;; Geometry = FP5.3 ;; Page Number = E52+E53
2N3821 Description = Low Power Field Effect Transistor ;; Case Style = TO18 ;; Geometry = FN3.6 ;; Page Number = E32+E33
2N3823 Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 8.0 ;; Crssmax (pF) = 4.0 ;; Vgs(off)min (V) = - ;; Vgs(off)max
2N3824 Description = Low Power Field Effect Transistor ;; Case Style = TO18 ;; Geometry = FN3.6 ;; Page Number = E32+E33
2N3846 Vceomin. Volts = 80 ;; Hfemin. = 10 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 46
2N3846JANTX Mil-s- 19500/ = 412 ;; Vcbo Volts = 300 ;; Vceo Volts = 200 ;; Ic (CONT.) Amps = 20.0 ;; Power (@TC =25 C) Watts = 150 ;; = ;; Case Type = TO-63 ;; Chip Type = 114
2N3847 Vceomin. Volts = 80 ;; Hfemin. = 10 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 46
2N3847JANTX Mil-s- 19500/ = 412 ;; Vcbo Volts = 400 ;; Vceo Volts = 300 ;; Ic (CONT.) Amps = 20.0 ;; Power (@TC =25 C) Watts = 150 ;; = ;; Case Type = TO-63 ;; Chip Type = 114
2N3848 Vceomin. Volts = 80 ;; Hfemin. = 10 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 46
2N3850 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 70
2N3902 Vceomin. Volts = 200 ;; Hfemin. = 10 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 60
2N3902JANTX Mil-s- 19500/ = 371 ;; Vcbo Volts = 700 ;; Vceo Volts = 400 ;; Ic (CONT.) Amps = 3.5 ;; Power (@TC =25 C) Watts = 100 ;; = ;; Case Type = TO-3 ;; Chip Type = 142
2N3909 Description = Low Power Field Effect Transistor ;; Case Style = TO-5 ;; Geometry = FP5.3 ;; Page Number = E52+E53
2N3917 Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 78
2N3918 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 70
2N3920A Description = Low Power Field Effect Transistor ;; Case Style = TO72 ;; Geometry = DMN113.3 ;; Page Number = E14+E15
2N3921 Description = Low Power Field Effect Transistor ;; Case Style = TO71 ;; Geometry = FN5.5 ;; Page Number = E34+E35

2N5912 : Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 72 ;; Geometry = FN36.1 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 5.0 ;; Crssmax (pF) = 1.2 ;; Vgs(off)min (V) = 1.0 ;; Vgs(off)max (V) = 6.0 ;; Lgssmax (nA) = 0.10 ;; Ylsmin (uMhos) = 5.5 ;; "@Freq (MhZ) = 450 ;; Idssmi

SDT3826 : Description = Planar Power Transistors 10 Amp PNP ;; Vceo (V) = 80 ;; Hfe Min/max = 20/80 ;; @ IC(A) = 5.0 ;; Vce (sat) Max(V) = 0.75 ;; @ ic (A) = 5.0 ;; FT Min (MHz) = 10.0 ;; = ;; PT Max (W) = 78.0 ;; = ;; Case Type = TO-3 ;; Chip Type = 267

SDT7015 : Description = Planar Power Transistors 10 Amp NPN ;; Vceo (V) = 60 ;; Hfe Min/max = 40/120 ;; @ IC(A) = 5.0 ;; Vce (sat) Max(V) = 0.50 ;; @ IC(A) = 5.0 ;; FT Min (MHz) = 15.0 ;; PT Max (W) = 87.0 ;; = ;; Case Type = TO-61 ;; Chip Type = 185

SDF054JABEGU1B : 30 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.0220 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF240JAASGD1Z : 18 A, 200 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.2000 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF360JECXGSB : 25 A, 400 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 400 volts ; rDS(on): 0.2100 ohms ; Package Type: TO-258AA, 3 PIN ; Number of units in IC: 1

SDF5N100JAAEGSB : 5 A, 1000 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1000 volts ; rDS(on): 2.4 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF9N100JEDXGD1Z : 9 A, 1000 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-259AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1000 volts ; rDS(on): 1.4 ohms ; Number of units in IC: 1

SDS60045JEBVLD : 60 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 60000 mA ; VRRM: 45 volts

SDS75045JAAXND1 : 75 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 75000 mA ; VRRM: 45 volts

 
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