Details, datasheet, quote on part number: 2N5074
Part2N5074
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionVceomin. Volts = 200 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 56
CompanySolitron Devices, Inc.
DatasheetDownload 2N5074 datasheet
Quote
Find where to buy
 
  
Related products with the same datasheet
140XC002
140XC003
140XC004
140XC005
140XC006
140XC007
140XC008
140XC009
140XC010
140XC011
140XC012
140XC013
Some Part number from the same manufacture Solitron Devices, Inc.
2N5075 Vceomin. Volts = 200 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 56
2N5078 Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 8.0 ;; Crssmax (pF) = 4.0 ;; Vgs(off)min (V) = - ;; Vgs(off)max
2N5114 Description = Low Power Field Effect Transistor ;; Case Style = TO72 ;; Geometry = FP7.3 ;; Page Number = E54+E55
2N5147 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 104
2N5148
2N5149
2N5150 Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 78
2N5151 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 2.50 ;; Page No. = 98
2N5152 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 72
2N5153 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 2.50 ;; Page No. = 98
2N5154 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 72
2N5157 Vceomin. Volts = 200 ;; Hfemin. = 10 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 60
2N5157JANTX Mil-s- 19500/ = 371 ;; Vcbo Volts = 700 ;; Vceo Volts = 500 ;; Ic (CONT.) Amps = 3.5 ;; Power (@TC =25 C) Watts = 100 ;; = ;; Case Type = TO-3 ;; Chip Type = 142
2N5163 Description = Low Power Field Effect Transistor ;; Case Style = TO18 ;; Geometry = FN3.6 ;; Page Number = E32+E33
2N5196 Description = Low Power Field Effect Transistor ;; Case Style = TO-18 ;; Geometry = FN22.2 ;; Bvdgoor BVGSS Min (V) = 50 ;; Cissmax (pF) = 10.0 ;; Crssmax (pF) = - ;; Vgs(off) Min (V) = - ;; Vgs(off) Max (V) = 9.5 ;; Lgssmax
2N5202 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 70
2N5218 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 72
2N5239 Vceomin. Volts = 200 ;; Hfemin. = 10 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 60
2N5245 Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 8.0 ;; Crssmax (pF) = 4.0 ;; Vgs(off)min (V) = - ;; Vgs(off)max
2N5250 Vceomin. Volts = 60 ;; Hfemin. = 5 ;; Hfemax. = - ;; @ ic Amps = 90.00 ;; Page No. = 80
2N5250JANTXTXV Mil-s- 19500/ = 380 ;; Vcbo Volts = 125 ;; Vceo Volts = 100 ;; Ic (CONT.) Amps = 50.0 ;; Power (@TC =25 C) Watts = 350 ;; = ;; Case Type = TO-114 ;; Chip Type = 196

SDT1625 : Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 50

SDT7734 : Description = Planar Power Transistors 10 Amp NPN ;; Vceo (V) = 100 ;; Hfe Min/max = 20/80 ;; @ IC(A) = 5.0 ;; Vce (sat) Max(V) = 0.50 ;; @ IC(A) = 5.0 ;; FT Min (MHz) = 5.0 ;; PT Max (W) = 125.0 ;; = ;; Case Type = TO-3 ;; Chip Type = 177

SDT7A04 : Description = Planar Power Transistors 10 Amp NPN ;; Vceo (V) = 120 ;; Hfe Min/max = 40/120 ;; @ IC(A) = 5.0 ;; Vce (sat) Max(V) = 0.50 ;; @ IC(A) = 5.0 ;; FT Min (MHz) = 30.0 ;; PT Max (W) = 70.0 ;; = ;; Case Type = TO-66 ;; Chip Type = 185

SDF13N90GAFXGSB : 13 A, 900 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 900 volts ; rDS(on): 0.8500 ohms ; Number of units in IC: 1

SDF17N60GAFVGD1N : 17 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 0.4000 ohms ; Number of units in IC: 1

SDF26N50GAFEHSN : 26 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 0.2200 ohms ; Number of units in IC: 1

SDF360JEAXHD1B : 25 A, 400 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 400 volts ; rDS(on): 0.2100 ohms ; Package Type: TO-258AA, 3 PIN ; Number of units in IC: 1

SDF360JEBVHD1Z : 25 A, 400 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 400 volts ; rDS(on): 0.2100 ohms ; Package Type: TO-258AA, 3 PIN ; Number of units in IC: 1

SDR08400JABWNU : 8 A, 400 V, SILICON, RECTIFIER DIODE Specifications: Number of Diodes: 1 ; VRRM: 400 volts ; IF: 8000 mA ; trr: 0.0350 ns

SDR70700JEDVNS : 70 A, 700 V, SILICON, RECTIFIER DIODE Specifications: Number of Diodes: 1 ; VRRM: 700 volts ; IF: 70000 mA ; trr: 0.0750 ns

SDS10100JDAXJD : 10 A, 100 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 10000 mA ; VRRM: 100 volts

 
0-C     D-L     M-R     S-Z