Details, datasheet, quote on part number: 2N5149
Part2N5149
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionVceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 104
CompanySolitron Devices, Inc.
DatasheetDownload 2N5149 datasheet
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Some Part number from the same manufacture Solitron Devices, Inc.
2N5150 Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 78
2N5151 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 2.50 ;; Page No. = 98
2N5152 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 72
2N5153 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 2.50 ;; Page No. = 98
2N5154 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 72
2N5157 Vceomin. Volts = 200 ;; Hfemin. = 10 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 60
2N5157JANTX Mil-s- 19500/ = 371 ;; Vcbo Volts = 700 ;; Vceo Volts = 500 ;; Ic (CONT.) Amps = 3.5 ;; Power (@TC =25 C) Watts = 100 ;; = ;; Case Type = TO-3 ;; Chip Type = 142
2N5163 Description = Low Power Field Effect Transistor ;; Case Style = TO18 ;; Geometry = FN3.6 ;; Page Number = E32+E33
2N5196 Description = Low Power Field Effect Transistor ;; Case Style = TO-18 ;; Geometry = FN22.2 ;; Bvdgoor BVGSS Min (V) = 50 ;; Cissmax (pF) = 10.0 ;; Crssmax (pF) = - ;; Vgs(off) Min (V) = - ;; Vgs(off) Max (V) = 9.5 ;; Lgssmax
2N5202 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 70
2N5218 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 72
2N5239 Vceomin. Volts = 200 ;; Hfemin. = 10 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 60
2N5245 Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 8.0 ;; Crssmax (pF) = 4.0 ;; Vgs(off)min (V) = - ;; Vgs(off)max
2N5250 Vceomin. Volts = 60 ;; Hfemin. = 5 ;; Hfemax. = - ;; @ ic Amps = 90.00 ;; Page No. = 80
2N5250JANTXTXV Mil-s- 19500/ = 380 ;; Vcbo Volts = 125 ;; Vceo Volts = 100 ;; Ic (CONT.) Amps = 50.0 ;; Power (@TC =25 C) Watts = 350 ;; = ;; Case Type = TO-114 ;; Chip Type = 196
2N5251 Vceomin. Volts = 60 ;; Hfemin. = 5 ;; Hfemax. = - ;; @ ic Amps = 90.00 ;; Page No. = 80
2N5251JANTXTXV Mil-s- 19500/ = 380 ;; Vcbo Volts = 180 ;; Vceo Volts = 150 ;; Ic (CONT.) Amps = 50.0 ;; Power (@TC =25 C) Watts = 350 ;; = ;; Case Type = TO-114 ;; Chip Type = 196
2N5253 Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 78
2N5265 Description = Low Power Field Effect Transistor ;; Case Style = TO-5 ;; Geometry = FP5.3 ;; Page Number = E52+E53
2N5284 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 72
2N5286 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 2.50 ;; Page No. = 98

KK4304 : Description = Low Power Field Effect Transistor ;; Case Style = TO-18 ;; Geometry = FN22.2 ;; Bvdgoor BVGSS Min (V) = 50 ;; Cissmax (pF) = 10.0 ;; Crssmax (pF) = - ;; Vgs(off) Min (V) = - ;; Vgs(off) Max (V) = 9.5 ;; Lgssmax (nA) = 1.00 ;; Ylsmin (µMhos) = 400 ;; Ylsmax (µMhos) = 1000 ;; Idssmin (mA

KS3687A : Description = Low Power Field Effect Transistor ;; Case Style = TO-18 ;; Geometry = FN22.2 ;; Bvdgoor BVGSS Min (V) = 50 ;; Cissmax (pF) = 10.0 ;; Crssmax (pF) = - ;; Vgs(off) Min (V) = - ;; Vgs(off) Max (V) = 9.5 ;; Lgssmax (nA) = 1.00 ;; Ylsmin (µMhos) = 400 ;; Ylsmax (µMhos) = 1000 ;; Idssmin (mA

SDF140 : VDS (V) = ;; Id Continuous Tc=25C (A) = 25 ;; Idm Pulsed (A) = 100 ;; RDS (On) (Ohms) = 0.1 ;; PD Max = 100 ;; Page No. = A6 ;; Package Options = ;; Outline Number Section Z =

SDT14415 : Description = Planar Power Transistors 15 Amp NPN ;; Vceo (V) = 300 ;; Hfe Min/max = 15/60 ;; @ IC(A) = 10.0 ;; Vce (sat) Max(V) = 0.50 ;; @ ic (A) = 10.0 ;; FT Min (MHz) = 10.0 ;; PT Max (W) = 220 ;; Case Type = TO-63 ;; Chip Type = 114

SDF15N60GAFVGD1N : 15 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 0.5000 ohms ; Number of units in IC: 1

SDF3N90JAAXGSZ : 3 A, 900 V, 4.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 900 volts ; rDS(on): 4.6 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF4NA100JABEGD1N : 4.4 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1000 volts ; rDS(on): 4 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDFC30JABSHD1N : 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 2.2 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDS60045JAASJS : 60 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 60000 mA ; VRRM: 45 volts

531XCG001 : 7.5 A, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Package: DIE-1 ; Pin Count: 1 ; Number of Diodes: 1 ; IF: 7500 mA ; trr: 0.0650 ns

 
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