Details, datasheet, quote on part number: 2N5250
Part2N5250
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionVceomin. Volts = 60 ;; Hfemin. = 5 ;; Hfemax. = - ;; @ ic Amps = 90.00 ;; Page No. = 80
CompanySolitron Devices, Inc.
DatasheetDownload 2N5250 datasheet
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Some Part number from the same manufacture Solitron Devices, Inc.
2N5250JANTXTXV Mil-s- 19500/ = 380 ;; Vcbo Volts = 125 ;; Vceo Volts = 100 ;; Ic (CONT.) Amps = 50.0 ;; Power (@TC =25 C) Watts = 350 ;; = ;; Case Type = TO-114 ;; Chip Type = 196
2N5251 Vceomin. Volts = 60 ;; Hfemin. = 5 ;; Hfemax. = - ;; @ ic Amps = 90.00 ;; Page No. = 80
2N5251JANTXTXV Mil-s- 19500/ = 380 ;; Vcbo Volts = 180 ;; Vceo Volts = 150 ;; Ic (CONT.) Amps = 50.0 ;; Power (@TC =25 C) Watts = 350 ;; = ;; Case Type = TO-114 ;; Chip Type = 196
2N5253 Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 78
2N5265 Description = Low Power Field Effect Transistor ;; Case Style = TO-5 ;; Geometry = FP5.3 ;; Page Number = E52+E53
2N5284 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 72
2N5286 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 2.50 ;; Page No. = 98
2N5288 Description = Planar Power Transistors 10 Amp NPN ;; Vceo (V) = 100 ;; Hfe Min/max = 30/90 ;; @ IC(A) = 5.0 ;; Vce (sat) Max(V) = 0.90 ;; @ IC(A) = 5.0 ;; FT Min (MHz) = 30.0 ;; PT Max (W) = 116.0 ;; = ;; Case
2N5289
2N5290 Description = Planar Power Transistors 10 Amp PNP ;; Vceo (V) = 100 ;; Hfe Min/max = 30/90 ;; @ IC(A) = 5.0 ;; Vce (sat) Max(V) = 0.90 ;; @ ic (A) = 5.0 ;; FT Min (MHz) = 30.0 ;; = ;; PT Max (W) = 116.0
2N5291
2N5312 Description = Planar Power Transistors 10 Amp PNP ;; Vceo (V) = 80 ;; Hfe Min/max = 30/90 ;; @ IC(A) = 10.0 ;; Vce (sat) Max(V) = 1.50 ;; @ ic (A) = 10.0 ;; FT Min (MHz) = 30.0 ;; = ;; PT Max (W) = 50.0
2N5313 Description = Planar Power Transistors 10 Amp NPN ;; Vceo (V) = 80 ;; Hfe Min/max = 30/90 ;; @ IC(A) = 10.0 ;; Vce (sat) Max(V) = 1.50 ;; @ IC(A) = 10.0 ;; FT Min (MHz) = 30.0 ;; PT Max (W) = 50.0 ;; = ;; Case
2N5314 Description = Planar Power Transistors 10 Amp PNP ;; Vceo (V) = 100 ;; Hfe Min/max = 30/90 ;; @ IC(A) = 10.0 ;; Vce (sat) Max(V) = 1.50 ;; @ ic (A) = 10.0 ;; FT Min (MHz) = 30.0 ;; = ;; PT Max (W) = 50.0
2N5315 Description = Planar Power Transistors 10 Amp NPN ;; Vceo (V) = 100 ;; Hfe Min/max = 30/90 ;; @ IC(A) = 10.0 ;; Vce (sat) Max(V) = 1.50 ;; @ IC(A) = 10.0 ;; FT Min (MHz) = 30.0 ;; PT Max (W) = 50.0 ;; = ;; Case
2N5316 Description = Planar Power Transistors 10 Amp PNP ;; Vceo (V) = 80 ;; Hfe Min/max = 30/90 ;; @ IC(A) = 5.0 ;; Vce (sat) Max(V) = 0.60 ;; @ ic (A) = 5.0 ;; FT Min (MHz) = 30.0 ;; = ;; PT Max (W) = 50.0
2N5317 Description = Planar Power Transistors 10 Amp NPN ;; Vceo (V) = 80 ;; Hfe Min/max = 30/90 ;; @ IC(A) = 5.0 ;; Vce (sat) Max(V) = 0.60 ;; @ IC(A) = 5.0 ;; FT Min (MHz) = 30.0 ;; PT Max (W) = 50.0 ;; = ;; Case
2N5318 Description = Planar Power Transistors 10 Amp PNP ;; Vceo (V) = 100 ;; Hfe Min/max = 30/90 ;; @ IC(A) = 5.0 ;; Vce (sat) Max(V) = 0.60 ;; @ ic (A) = 5.0 ;; FT Min (MHz) = 30.0 ;; = ;; PT Max (W) = 50.0
2N5319 Description = Planar Power Transistors 10 Amp NPN ;; Vceo (V) = 100 ;; Hfe Min/max = 30/90 ;; @ IC(A) = 5.0 ;; Vce (sat) Max(V) = 0.60 ;; @ IC(A) = 5.0 ;; FT Min (MHz) = 30.0 ;; PT Max (W) = 50.0 ;; = ;; Case
2N5327 Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 5.00 ;; Page No. = 72
2N5327JANTXTXV Mil-s- 19500/ = 394 ;; Vcbo Volts = 150 ;; Vceo Volts = 120 ;; Ic (CONT.) Amps = 10.0 ;; Power (@TC =25 C) Watts = 5 ;; = ;; Case Type = TO-5 ;; Chip Type = 185

269XC006 : Vceomin. Volts = 60 ;; Hfemin. = 30 ;; Hfemax. = - ;; @ ic Amps = 0.50 ;; Page No. = 102

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SDF11N100GAFEHD1Z : 11 A, 1000 V, 1.15 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1000 volts ; rDS(on): 1.15 ohms ; Number of units in IC: 1

SDF12N90GAFSHD1N : 12 A, 900 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 900 volts ; rDS(on): 0.9000 ohms ; Number of units in IC: 1

SDF1NA60JDAVHD1Z : 1.5 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 6 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF240JABSHU1B : 18 A, 200 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.2000 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF450JAAEGU1N : 13 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 0.4000 ohms ; Number of units in IC: 1

SDF50N40JAMWU1B : 50 A, 400 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 400 volts ; rDS(on): 0.1200 ohms ; Number of units in IC: 2

SDIM14C60AF : 14 A, 600 V, N-CHANNEL IGBT Specifications: Polarity: N-Channel ; Number of units in IC: 6

SDS10045JDAEND1 : 10 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Package: TO-257AA, 3 PIN ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 10000 mA ; VRRM: 45 volts

SDS10100JFAXMU1 : 10 A, 100 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 10000 mA ; VRRM: 100 volts

SDS10100JFBWND1 : 10 A, 100 V, SILICON, RECTIFIER DIODE Specifications: Arrangement: Common Anode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 10000 mA ; Pin Count: 3 ; Number of Diodes: 2

 
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