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Part: 1T363
Category:
Description: Silicon Variable Capacitance Diode
Company: Sony Electronics
Datasheet: Download 1T363 datasheet File size : 110 kB
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1T363
Silicon Variable Capacitance Diode For the availability of this product, please contact the sales office.
Description T h e 1T363 is a variable capacitance diode designed for electronic tuning of CATV tuner,and s u p e r miniature package allows the tuner miniaturization. Features · Super miniature package · Low series resistance 0.80 Max. (f=470 MHz) · Large capacitance ratio 15 Typ. (C1/C28) · Small leakage current 10 nA Max. (VR=28 V) · Maximum capacitance deviation 3% Max. Applications Electronic tuning for TV, CATV Structure Silicon epitaxial planar type diode M-235
Absolute Maximum Ratings (Ta=25 °C) · Reverse voltage VR 30 V · Peak reverse voltage VRM 35 V (RL10 k) · Operating temperature Topr 85 °C · Storage temperature Tstg 55 to +150 °C
Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Series resistance Maximum-capacitance deviation in the same ranking Symbol IR C1 C28 C1/C28 rs C Conditions VR=28 V VR=1 V, f=1 MHz VR=28 V, f=1 MHz f=1 MHz CD=14 pF, f=470 MHz VR=1 to 28 V, f=1 MHz Min. 34.65 2.361 13.5 Typ. 38.00 2.515 15.0 0.75 Max. 10 42.35 2.754 0.80 3
(Ta=25 °C) Unit nA pF pF %
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E89145B83-TE
1T363
Diode capacitance vs. Reverse voltage 100 Ta=25°C f=1MHz CD-Diode capacitance (pF)
10
1 1 10 VR-Reverse voltage (V) 50
Reverse voltage vs. Ambient temperature IR=10µA VR-Reverse voltage (V) 50
40
30
20
0
20
40
60
80
Ta-Ambient temperature (°C)
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1T363
Diode capacitance vs. Ambient temperature 1.03 f=1MHz VR=1V
Reverse current vs. Ambient temperature 1000 VR=28V
1.02 C (Ta) Diode capacitance C (25°C)
VR=2V VR=10V IR-Reverse current (pA)
100
1.01 VR=25V 1.00
10
1
0.99
0.98 20
0
20
40
60
80
100
20
0
20
40
60
80
Ta-Ambient temperature (°C)
Ta-Ambient temperature (°C)
Thermal coefficient of diode capacitance 1000 VR=28V 100
Reverse current vs. Reverse voltage Ta=60°C
Thermal coefficient (ppm/°C)
IR-Reverse current (pA)
Ta=25°C 10
100
10 1 10 VR-Reverse voltage (V) 30
1 1 10 VR-Reverse voltage (V) 100
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1T363
Package Outline
Unit : mm
M
+ 0.2 1.25 0.1 2
-235
0.9 ± 0.1 + 0.1 0.3 0.05 0.2
1.7 ± 0.1
1 + 0.1 0.3 0.05
2.5 ± 0.2
0 ± 0.05 + 0.1 0.11 0.06
0° to 10°
NOTE: Dimension "" does not include mold protrusion.
SONY CODE EIAJ CODE JEDEC CODE
M-235
PACKAGE WEIGHT
0.1g
Marking
CATHODE MARK
2
63 B
Notes 1) B:Lot No.(Year and Month of manufacture) Year;Last one digit Month;A,B,C(for Oct. to Dec.) 1 to 9(for Jan.to Sept.)
1
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Others parts begin by 1t
1T-1
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