|
|
Part: 1T365
Category:
Description: Silicon Variable Capacitance Diode
Company: Sony Electronics
Datasheet: Download 1T365 datasheet File size : 110 kB
Request For quote: Find where to buy 1T365
Datasheet text preview:
1T365
Silicon Variable Capacitance Diode For the availability of this product, please contact the sales office.
Description T h e 1T365 is a variable capacitance diode contained in super miniature package, and used for electronic-tuning of BS tuner. Features · Super miniature package · Small capacitance 0.7 pF Typ. (VR=25 V) · Low leakage current 10 nA Max. (VR=28 V) · Small serial resistance 1.1 Typ. (VR=1 V, f=470 MHz) Structure Silicon epitaxial planar type diode M-235
Absolute Maximum Ratings (Ta=25 °C) · Reverse voltage VR 30 V · Maximum reverse voltage VRM 35 V (RL10 k) · Operating temperature Topr 20 to +75 °C · Storage temperature Tstg 65 to +150 °C
Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Serial resistance Capacitance deviation in a matching group Symbol IR C2 C25 C2/C25 rs C Conditions VR=28 V VR=2 V, f=1 MHz VR=25 V, f=1 MHz VR=1 V, f=470 MHz VR=2 to 25 V, f=1 MHz Min. 3.31 0.61 5.0 Typ. Max. 10 4.55 0.77 1.8 5.0
(Ta=25 °C) Unit nA pF pF %
0.70 5.7 1.1
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
--1--
E91539A82-TE
1T365
Example of Representative Characteristics
Diode capacitance vs. Reverse voltage 10 Ta=25°C f=1MHz Reverse voltage vs. Operating ambient temperature 45 VR-Reverse voltage (V) IR=10µA
C-Diode capacitance (pF)
40
1
35
30 20
0
20
40
60
80
100
Ta-Operating ambient temperature (°C)
0.1 1 10 VR-Reverse voltage (V) 100
Reverse current vs. Operating ambient temperature 100 VR=28V 10
Reverse current vs. Reverse voltage
Ta=60°C IR-Reverse current (pA) IR-Reverse current (pA) 10
1.0 Ta=25°C
1.0
0.1
0.1
0.01 20
0
20
40
60
80
0.01 1
10 VR-Reverse voltage (V)
100
Ta-Operating ambient temperature (°C)
--2--
1T365
Serial resistance vs. Reverse voltage 1.6 1.4 rs-Serial resistance () 1.2 1.0 0.8 0.6 0.4 0.2 0 1 rs-Serial resistance () f=470MHz Ta=25°C 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 100
Serial resistance vs. Frequency VR=1V Ta=25°C
2
3
5
10
20
30
VR-Reverse voltage (V)
200
500 f-Frequency (MHz)
1000
Diode capacitance vs. Operating ambient temperature 1.03 f=1MHz 1000
Temperature coefficient of diode capacitance f=1MHz
C (Ta) Diode capacitance C (25°C)
VR=2V VR=25V VR=10V
1.01
Temperature coefficient (ppm/°C) 80
1.02
100
1.00
0.99
0.98 20
0
20
40
60
10 1 10 VR-Reverse voltage (V) 100
Ta-Operating ambient temperature (°C)
--3--
1T365
Package Outline
Unit : mm
M
+ 0.2 1.25 0.1 2
-235
0.9 ± 0.1 + 0.1 0.3 0.05 0.2
1.7 ± 0.1
1 + 0.1 0.3 0.05
2.5 ± 0.2
0 ± 0.05 + 0.1 0.11 0.06
0° to 10°
NOTE: Dimension "" does not include mold protrusion.
SONY CODE EIAJ CODE JEDEC CODE
M-235
PACKAGE WEIGHT
0.1g
Marking
CATHODE MARK
2
65 B
Notes 1) B:Lot No.(Year and Month of manufacture) Year;Last one digit Month;A,B,C(for Oct. to Dec.) 1 to 9(for Jan.to Sept.)
1
--4--
Others parts begin by 1t
1T-1
|
|
|
