|
|
Part: 1T369
Category:
Description: Silicon Variable Capacitance Diode
Company: Sony Electronics
Datasheet: Download 1T369 datasheet File size : 110 kB
Request For quote: Find where to buy 1T369
Datasheet text preview:
1T369
Silicon Variable Capacitance Diode For the availability of this product, please contact the sales office.
Description The 1T369 is a super miniature package variable capacitance diode for a wide-band CATV. Features · Super miniature package · Small series resistance rs=1.0 (Max.) · Large capacitance ratio C2/C25=15.5 (Typ.) · Capacitance deviation in a matching group 2.0 % (Max.) Applications Electronic tuning of wide-band CATV Structure Silicon epitaxial planar type diode M-235
Absolute Maximum Ratings (Ta=25 °C) · Reverse voltage VR 34 · Operating temperature Topr 20 to +75 · Storage temperature Tstg 65 to +150
V °C °C
Electrical Characteristics Item Reverse current Reverse voltage Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol IR VR C2 C25 C2/C25 rs C Conditions VR=28 V IR=1 µA VR=2 V, f=1 MHz VR=25 V, f=1 MHz CD=14 pF, f=470 MHz C2 to C25 Min. 34 39.5 2.60 14.5 Typ. Max. 10 47.4 3.03 17.0 1.0 2.0
(Ta=25 °C) Unit nA V pF pF %
43.4 2.80 15.5
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
--1--
E92903A82-TE
1T369
Example of Representative Characteristics
Diode capacitance vs. Reverse voltage 100 Ta=25°C f=1MHz C (Ta) Diode capacitance C (25°C) 1.03 Diode capacitance vs. Ambient temperature f=1MHz VR=2V
1.02
C-Diode capacitance (pF)
VR=7V 1.01 VR=15V 1.00 VR=25V
10
0.99
1
1
10 VR-Reverse voltage (V)
100
0.98 20
0
20
40
60
80
Ta-Ambient temperature (°C)
Temperature coefficient of diode capacitance Temperature coefficient (ppm/°C) 1000 f=1MHz 500 45 VR-Reverse voltage (V) 50
Reverse breakdown voltage vs. Ambient temperature IR=10µA
200 100
40
35
50
1
10 VR-Reverse voltage (V)
50
100
30
25 20
0
20
40
60
80
Ta-Ambient temperature (°C)
--2--
1T369
Reverse current vs. Reverse voltage 100 Ta=60°C 1000
Reverse current vs. Ambient temperature
Ta=25°C IR-Reverse current (pA) IR-Reverse current (pA) 10 100
VR=28V
1
10
0.1
1
10 VR-Reverse voltage (V)
100
1 20
0
20
40
60
80
Ta-Ambient temperature (°C)
--3--
1T369
Package Outline
Unit : mm
M
+ 0.2 1.25 0.1 2
-235
0.9 ± 0.1 + 0.1 0.3 0.05 0.2
1.7 ± 0.1
1 + 0.1 0.3 0.05
2.5 ± 0.2
0 ± 0.05 + 0.1 0.11 0.06
0° to 10°
NOTE: Dimension "" does not include mold protrusion.
SONY CODE EIAJ CODE JEDEC CODE
M-235
PACKAGE WEIGHT
0.1g
Marking
CATHODE MARK
2
69 B
Notes 1) B:Lot No.(Year and Month of manufacture) Year;Last one digit Month;A,B,C(for Oct. to Dec.) 1 to 9(for Jan.to Sept.)
1
--4--
Others parts begin by 1t
1T-1
|
|
|