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Part: 1T369

Category:

Description: Silicon Variable Capacitance Diode

Company: Sony Electronics

Datasheet: Download 1T369 datasheet     File size : 110 kB

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Datasheet text preview:
1T369
Silicon Variable Capacitance Diode For the availability of this product, please contact the sales office.
Description The 1T369 is a super miniature package variable capacitance diode for a wide-band CATV. Features · Super miniature package · Small series resistance rs=1.0 (Max.) · Large capacitance ratio C2/C25=15.5 (Typ.) · Capacitance deviation in a matching group 2.0 % (Max.) Applications Electronic tuning of wide-band CATV Structure Silicon epitaxial planar type diode M-235

Absolute Maximum Ratings (Ta=25 °C) · Reverse voltage VR 34 · Operating temperature Topr ­20 to +75 · Storage temperature Tstg ­65 to +150

V °C °C

Electrical Characteristics Item Reverse current Reverse voltage Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol IR VR C2 C25 C2/C25 rs C Conditions VR=28 V IR=1 µA VR=2 V, f=1 MHz VR=25 V, f=1 MHz CD=14 pF, f=470 MHz C2 to C25 Min. 34 39.5 2.60 14.5 Typ. Max. 10 47.4 3.03 17.0 1.0 2.0

(Ta=25 °C) Unit nA V pF pF %

43.4 2.80 15.5

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

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E92903A82-TE

1T369

Example of Representative Characteristics
Diode capacitance vs. Reverse voltage 100 Ta=25°C f=1MHz C (Ta) Diode capacitance C (25°C) 1.03 Diode capacitance vs. Ambient temperature f=1MHz VR=2V

1.02

C-Diode capacitance (pF)

VR=7V 1.01 VR=15V 1.00 VR=25V

10

0.99

1

1

10 VR-Reverse voltage (V)

100

0.98 ­20

0

20

40

60

80

Ta-Ambient temperature (°C)

Temperature coefficient of diode capacitance Temperature coefficient (ppm/°C) 1000 f=1MHz 500 45 VR-Reverse voltage (V) 50

Reverse breakdown voltage vs. Ambient temperature IR=10µA

200 100

40

35

50

1

10 VR-Reverse voltage (V)

50

100

30

25 ­20

0

20

40

60

80

Ta-Ambient temperature (°C)

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1T369

Reverse current vs. Reverse voltage 100 Ta=60°C 1000

Reverse current vs. Ambient temperature

Ta=25°C IR-Reverse current (pA) IR-Reverse current (pA) 10 100

VR=28V

1

10

0.1

1

10 VR-Reverse voltage (V)

100

1 ­20

0

20

40

60

80

Ta-Ambient temperature (°C)

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1T369

Package Outline

Unit : mm

M
+ 0.2 1.25 ­ 0.1 2

-235

0.9 ± 0.1 + 0.1 0.3 ­ 0.05 0.2

1.7 ± 0.1
1 + 0.1 0.3 ­ 0.05

2.5 ± 0.2

0 ± 0.05 + 0.1 0.11 ­ 0.06

0° to 10°

NOTE: Dimension "" does not include mold protrusion.

SONY CODE EIAJ CODE JEDEC CODE

M-235

PACKAGE WEIGHT

0.1g

Marking

CATHODE MARK

2

69 B

Notes 1) B:Lot No.(Year and Month of manufacture) Year;Last one digit Month;A,B,C(for Oct. to Dec.) 1 to 9(for Jan.to Sept.)

1

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