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Part: 1T378A

Category:

Description: Variable Capacitance Diode

Company: Sony Electronics

Datasheet: Download 1T378A datasheet     File size : 110 kB

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Datasheet text preview:
1T378A
Variable Capacitance Diode For the availability of this product, please contact the sales office.
Description T h e 1T378A is a variable capacitance diode designed for electronic tuning of wide-band CATV tuners, and the super miniature package allows the tuner miniaturization. High capacitance ratio (C25/C28) is improved to support guard band. Features · Super miniature package · Low series resistance 0.85 Max. · Large capacitance ratio 12.5 Typ. 1.03 Min. · Small leakage current 10 nA Max. · Capacitance deviation within 2 % M-235

(f=470 MHz) (C2/C25) (C25/C28) (VR=28 V)

Absolute Maximum Ratings (Ta=25 °C) · Reverse voltage VR 34 · Operating temperature Topr ­20 to +75 · Storage temperature Tstg ­65 to +150

V °C °C

Applications E l e c t r o n i c tuning of VHF band and wide-band CATV tuners Structure Silicon epitaxial planar type diode

Electrical Characteristics Item Reverse current Reverse voltage Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol IR VR C2 C25 C2/C25 C25/C28 rs C Conditions VR=28 V IR=1 µA VR=2 V, f=1 MHz VR=25 V, f=1 MHz Min. 34 33.0 2.57 12.0 1.03 Typ. Max. 10 39.0 3.00 12.5 0.85 2

(Ta=25 °C) Unit nA V pF pF

CD=14 pF, f=470 MHz VR=2 to 25 V, f=1 MHz

%

The continuous 20 pieces of C are guaranteed.

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

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E97108A82-TE

1T378A

Diode capacitance vs. Reverse voltage 100 Ta=25°C, f=1MHz 50 1000

Reverse current vs. Ambient temperature VR=28V

C-Diode capacitance (pF)

20

5

2 1

IR-Reverse current (pA)
1 2 5 10 20 VR-Reverse voltage (V) 50 100

10

100

10

1 ­20 Reverse current vs. Reverse voltage 1000.00

0 20 40 60 Ta-Ambient temperature (°C)

80

100.00

IR-Reverse current (pA)

10.00

T T T
1

a=80°C

a=60°C

1.00

a=25°C

0.10

10 VR-Reverse voltage (V)

100

--2--

1T378A

Forward voltage vs. Ambient temperature 0.80 IF=1mA 45

Reverse voltage vs. Ambient temperature IR=10µA

0.70

VR-Reverse voltage (V)
0 20 40 60 Ta-Ambient temperature (°C) 80

VF-Forward voltage (V)

40

0.60

35

0.50 ­20

30 ­20

0 20 40 60 Ta-Ambient temperature (°C)

80

Diode capacitance vs. Ambient temperature 1.04 1000 f=1MHz 1.03 1.02 1.01 1.00 0.99 0.98 0.97 ­20 10 1 VR=2V VR=7V VR=15V VR=25V

Thermal coefficient of diode capacitance f=1MHz

C (Ta) / C (25°C)-Diode capacitance

Thermal coefficient (ppm/°C)

VR=1V

100

0 20 40 60 Ta-Ambient temperature (°C)

80

10 VR-Reverse voltage (V)

100

--3--

1T378A

Package Outline

Unit : mm

M
+ 0.2 1.25 ­ 0.1 2

-235

0.9 ± 0.1 + 0.1 0.3 ­ 0.05 0.2

1.7 ± 0.1
1 + 0.1 0.3 ­ 0.05

2.5 ± 0.2

0 ± 0.05 + 0.1 0.11 ­ 0.06

0° to 10°

NOTE: Dimension "" does not include mold protrusion.

SONY CODE EIAJ CODE JEDEC CODE

M-235

PACKAGE WEIGHT

0.1g

Marking

CATHODE MARK

2

78 B

Notes 1) B:Lot No.(Year and Month of manufacture) Year;Last one digit Month;A,B,C(for Oct. to Dec.) 1 to 9(for Jan.to Sept.)

1

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