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Details, datasheet, quote on part number:1T379
 
 
Part:1T379
Description:Silicon Variable Capacitance Diode For Electronictuning of BS And CS Tuners
Company:Sony Electronics
Datasheet:Download 1T379 datasheet   File size : 50 kB
Request For quote:  Find where to buy 1T379
 



Datasheet text preview:
1T379
Silicon Variable Capacitance Diode for Electronic Tuning of BS and CS Tuners

For the availability of this product, please contact the sales office.
Description T h e 1T379 is a variable capacitance diode designed for the electronic tuning of BS and CS tuners, and it has a super miniature package. Features · Super miniature package · Small series resistance 1.50 Max. (f=470 MHz) · Large capacitance ratio 12.0 Typ. (C1/C25) · Small capacitance 0.60 pF Max. (VR=25 V) Structure Silicon epitaxial planar-type diode M-235

Absolute Maximum Ratings (Ta=25 °C) · Reverse voltage VR 30 V · Maximum reverse voltage VRM 35 V (RL10 k) · Operating temperature Topr ­20 to +75 °C · Storage temperature Tstg ­65 to +150 °C

Electrical Characteristics Item Reverse current Reverse voltage Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol IR VR C1 C25 C1/C25 rs C Conditions VR=25 V IR=1 µA VR=1 V, f=1 MHz VR=25 V, f=1 MHz f=1 MHz VR=5 V, f=470 MHz VR=1 to 25 V, f=1 MHz Min. 30 6.0 0.5 10.0 Typ. Max. 10 7.2 0.6 12.0 1.50 6

(Ta=25 °C) Unit nA V pF pF %

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

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E94205B82-TE

1T379

Thermal coefficient of diode capacitance (ppm/°C)

Diode capacitance vs. Reverse voltage 10.0 f=1MHz Ta=25°C

Thermal coefficient of diode capacitance 1000

C-Diode capacitance (pF)

1.0

100

50

1

10 VR-Reverse voltage (V)

100

0.1

1

10 VR-Reverse voltage

100

Diode capacitance vs. Ambient temperature 1.03 f=1MHz 0.90

Forward voltage vs. Ambient temperature

VF-Forward voltage (V)

VR=1V 1.02

IF=1mA 0.86 0.82 0.78 0.74 0.70 -20 0 20 40 60 80

Diode capacitance

VR=2V VR=7V VR=15V VR=25V

1.01

C (25°C)

1.00

C (Ta)

Ta-Ambient temperature (°C) 0.99

0.98 -20

0

20

40

60

80

Ta-Ambient temperature (°C)

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1T379

Reverse voltage vs. Ambient temperature 44

VR-Reverse voltage (V)

IR=10µA 42 40 38 36 34 -20

0

20

40

60

80

Ta-Ambient temperature (°C)

Reverse current vs. Ambient temperature 100 VR=28V 100

Reverse current vs. Reverse voltage

Ta=80°C

Ta=60°C 10 10

IR-Reverse current (pA)

IR-Reverse current (pA)

Ta=25°C

1.0

1.0

0.1 -20 0 20 40 60 80

0.1 1 10 VR-Reverse voltage (V) 100

Ta-Ambient temperature (°C)

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1T379

Package Outline

Unit : mm

M
+ 0.2 1.25 ­ 0.1 2

-235

0.9 ± 0.1 + 0.1 0.3 ­ 0.05 0.2

1.7 ± 0.1
1 + 0.1 0.3 ­ 0.05

2.5 ± 0.2

0 ± 0.05 + 0.1 0.11 ­ 0.06

0° to 10°

NOTE: Dimension "" does not include mold protrusion.

SONY CODE EIAJ CODE JEDEC CODE

M-235

PACKAGE WEIGHT

0.1g

Marking

CATHODE MARK

2

79 B

Notes 1) B:Lot No.(Year and Month of manufacture) Year;Last one digit Month;A,B,C(for Oct. to Dec.) 1 to 9(for Jan.to Sept.)

1

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