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Details, datasheet, quote on part number:1T397
 
 
Part:1T397
Description:Variable Capacitance Diode
Company:Sony Electronics
Datasheet:Download 1T397 datasheet   File size : 50 kB
Request For quote:  Find where to buy 1T397
 



Datasheet text preview:
1T397
Variable Capacitance Diode For the availability of this product, please contact the sales office.
Description T h e 1T397 is a variable capacitance diode d e s i g n e d for the electronic tuning of wide band CATV tuners, and it has a super miniature package. Features · Super miniature package · Large capacitance ratio C2/C25=14.5 Min. C1/C28=21.5 Min. C25/C28=1.03 Min. · Small series resistance rs=1.1 Max. · High reverse voltage VR=34 V Structure Silicon epitaxial planar-type diode M-235

Absolute Maximum Ratings (Ta=25 °C) · Reverse voltage VR 34 · Operating temperature Topr ­20 to +75 · Storage temperature Tstg ­65 to +150

V °C °C

Electrical Characteristics Item Reverse current Reverse voltage Diode capacitance Symbol IR VR C2 C25 C2/C25 C1/C28 C25/C28 rs C Conditions VR=28 V IR=1 µA VR=2 V, f=1 MHz VR=25 V, f=1 MHz Min. 34 42.9 2.60 14.5 21.5 1.03 Typ. Max. 10 51.0 3.03 15.5

(Ta=25 °C) Unit nA V pF pF

Capacitance ratio Series resistance Capacitance deviation in a matching group

CD=14 pF, f=470 MHz VR=1 to 28 V

1.1 2.0

%

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

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E94610B83-TE

1T397

Diode capacitance vs. Reverse voltage temperature 100 Ta=25°C 50 1.000

Reverse current vs. Ambient temperature

VR=28V

C-Diode capacitance (pF)

20

10

5

2

IR Reverse current (nA)
1 2 5 10 20 50 VR - Reverse voltage temperature

0.100

1

0.010

0.001 ­20 0 20 40 60 80 Ta - Ambient temperature (°C)

Forward voltage vs. Ambient temperature 0.90 50 IF=1mA

Reverse voltage vs. Ambient temperature IR=10µA

VF Forward voltage (V)

VR - Reverse voltage (V)

0.80

45

0.70

40

0.60 ­20

35

0

20

40

60

80

Ta - Ambient temperature (°C) 30 -20 0 20 40 60 80

Ta - Ambient temperature (°C)

--2--

1T397

Diode capacitance vs. Ambient temperature 1.03 VR=1V 1.02

VR=2V VR=7V VR=25V VR=15V

C (25°C)

C (Ta)

1.01

Diode capacitance

1.00

0.99

0.98 ­20

0

20

40

60

80

Ta - Ambient temperature (°C)

Reverse current vs. Reverse voltage

Thermal coeffcient of diode capacitance vs. Reverse voltage

0.100

Thermal coeffcient of diode capacitance (ppm/°C)

1000

500

200

IR - Reverse current (nA)

0.010 Ta=80°C

100

50 1 2 5 10 20 50

Ta=60°C

VR - Reverse voltage (V)

0.001

Ta=25°C

0.0001 1 2 5 10 20 50 VR - Reverse voltage(V)

--3--

1T397

Package Outline

Unit : mm

M
+ 0.2 1.25 ­ 0.1 2

-235

0.9 ± 0.1 + 0.1 0.3 ­ 0.05 0.2

1.7 ± 0.1
1 + 0.1 0.3 ­ 0.05

2.5 ± 0.2

0 ± 0.05 + 0.1 0.11 ­ 0.06

0° to 10°

NOTE: Dimension "" does not include mold protrusion.

SONY CODE EIAJ CODE JEDEC CODE

M-235

PACKAGE WEIGHT

0.1g

Marking

CATHODE MARK

2

97 B

Notes 1) B:Lot No.(Year and Month of manufacture) Year;Last one digit Month;A,B,C(for Oct. to Dec.) 1 to 9(for Jan.to Sept.)

1

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