Digchip : Database on electronics components
Electronic components database
Search:                      In section:
Member, Distributor  
Log In
Email:
Password:


Part: 1T399

Category:

Description: Variable Capacitance Diode

Company: Sony Electronics

Datasheet: Download 1T399 datasheet     File size : 110 kB

Request For quote: Find where to buy 1T399



Datasheet text preview:
1T399
Variable Capacitance Diode For the availability of this product, please contact the sales office.
Description T h e 1T399 is a variable capacitance diode d e s i g n e d for the electronic tuning of wide-band CATV tuners, and it has a super miniature package. Features · Super miniature package · Small series resistance 0.75 Max. (f=470 MHz) · Large capacitance ratio 11.7 Typ. (C2/C25) 18.0 Typ. (C1/C28) · Small leak current 10 nA Max. (VR=28 V) · Capacitance deviation in a matching group: within 2 % Applications Electronic tuning of wide-band CATV tuners Structure Silicon epitaxial planar-type diode M-235

Absolute Maximum Ratings (Ta=25 °C) · Reverse voltage VR 34 · Operating temperature Topr ­20 to +75 · Storage temperature Tstg ­65 to +150

V °C °C

Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol IR C2 C25 C2/C25 C25/C28 rs C Conditions VR=28 V VR=2 V, f=1 MHz VR=25 V, f=1 MHz Min. 29.50 2.53 11.0 1.03 Typ. Max. 10 35.50 2.93

(Ta=25 °C) Unit nA pF pF

11.7 0.75 2 %

CD=14 pF, f=470 MHz VR=2 to 25 V, f=1 MHz

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

--1--

E97454A82-TE

1T399

Example of Representative Characteristics

Diode capacitance vs. Reverse voltage 100 Ta = 25°C 50

Reverse current vs. Ambient temperature VR = 28V

C ­ Diode capacitance (pF)

20 10 5

100

2 1 1 2 5 10 20 50 VR ­ Reverse voltage (V)

IR ­ Reverse current (pA)

10

1 ­20

0

20

40

60

80

Ta ­ Ambient temperature [°C]

Forward voltage vs. Ambient temperature 0.80 IF = 1mA 50

Reverse voltage vs. Ambient temperature IR = 10µA

VR ­ Reverse voltage (V)
0 20 40 60 80

VF ­ Forward voltage (V)

0.70

45

0.60

40

0.50 ­20

35 ­20

0

20

40

60

80

Ta ­ Ambient temperature (°C)

Ta ­ Ambient temperature (°C)

--2--

1T399

Diode capacitance vs. Ambient temperature 1.03 VR = 1V VR = 2V

C (Ta)/C (25°C) ­ Diode capacitance

1.02

1.01

VR = 7V VR = 15V VR = 25V

1.00

0.99

0.98 ­20

0

20

40

60

80

Ta ­ Ambient temperature (°C)

Reverse current vs. Reverse voltage 100 Ta = 80°C Ta = 60°C 1000

Temperature coefficient of diode capacitance

Temperature coefficient (ppm/°C)

500

Ta = 25°C

IR ­ Reverse current (pA)

10

200

100

50 1 1 2 5 10 20 50 VR ­ Reverse voltage (V)

0.1 1 3 10 30 VR ­ Reverse voltage (V)

--3--

1T399

Package Outline

Unit : mm

M
+ 0.2 1.25 ­ 0.1 2

-235

0.9 ± 0.1 + 0.1 0.3 ­ 0.05 0.2

1.7 ± 0.1
1 + 0.1 0.3 ­ 0.05

2.5 ± 0.2

0 ± 0.05 + 0.1 0.11 ­ 0.06

0° to 10°

NOTE: Dimension "" does not include mold protrusion.

SONY CODE EIAJ CODE JEDEC CODE

M-235

PACKAGE WEIGHT

0.1g

Marking

CATHODE MARK

2

99 B

Notes 1) B:Lot No.(Year and Month of manufacture) Year;Last one digit Month;A,B,C(for Oct. to Dec.) 1 to 9(for Jan.to Sept.)

1

--4--




Others parts begin by 1t
1T-1