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Part: 1T403
Category:
Description: Variable Capacitance Diode
Company: Sony Electronics
Datasheet: Download 1T403 datasheet File size : 110 kB
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1T403
Variable Capacitance Diode For the availability of this product, please contact the sales office.
Description T h e 1T403 is a variable capacitance diode designed for electronic tuning of VHF TV tuners and C A T V tuners using a super-small-miniature flat package (SSVC). Features · Super-small-miniature flat package · Low series resistance: 0.8 Max. (f=470 MHz) · Large capacitance ratio: 15.0 Typ. (C1/C28) · Small leakage current: 10 nA Max. (VR=28 V) · Capacitance deviation in a matching group: within 2 % Applications Electronic tuning of TV and CATV tuners Structure Silicon epitaxial planar type diode M-290
Absolute Maximum Ratings (Ta=25 °C) · Reverse voltage VR 30 V · Peak reverse voltage VRM 35 V (RL10 k) · Operating temperature Topr 20 to +75 °C · Storage temperature Tstg 65 to +150 °C
Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol IR C1 C28 C1/C28 rs C Conditions VR=28 V VR=1 V, f=1 MHz VR=28 V, f=1 MHz CD=14 pF, f=470 MHz VR=1 to 28 V, f=1 MHz Min. Typ. Max. 10 42.31 2.714 15.0 0.75 0.80 2
(Ta=25 °C) Unit nA pF pF %
34.61 2.321 13.5
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E95916-TE
1T403
Diode capacitance vs. Reverse voltage 100 Ta=25°C 50 100
Reverse current vs. Ambient temperature VR=28V
C-Diode capacitance (pF)
10 5
IR-Reverse current (pA)
1 2 5 10 20 VR-Reverse voltage (V) 50
20
10
2 1
1 20
0 20 40 60 Ta-Ambient temperature (°C)
80
Forward voltage vs. Ambient temperature 0.80 45
Reverse voltage vs. Ambient temperature
VF-Forward voltage (V)
0.70
VR-Reverse voltage (V)
IF=1mA
IR=10µA 40
0.60
35
0.50 20
0
20 40 60 Ta-Ambient temperature (°C)
80
30 20
0
20 40 60 Ta-Ambient temperature (°C)
80
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1T403
Diode capacitance vs. Ambient temperature 1.03 VR=1V
C (Ta)/C (25°C)-Diode capacitance
1.02
VR=2V VR=7V VR=28V VR=15V
1.01
1.00
0.99
0.98 20
0
20 40 60 Ta-Ambient temperature (°C)
80
Reverse current vs. Reverse voltage 100 1000
Temperature coefficient of diode capacitance
Temperature coefficient (ppm/°C)
Ta=25°C
500
Ta=80°C
IR-Reverse current (pA)
10
200
Ta=60°C
100
50 1 2 20 5 10 VR-Reverse voltage (V) 50
1
0.1 1 3 10 30 VR-Reverse voltage (V)
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1T403
Package Outline
Unit : mm
M-290
1.3 ± 0.1
A 1.7 ± 0.1
0.8 ± 0.1
0 .2 M
A
10° MAX
b
c
10° MAX
0.7 ± 0.1
BASE METAL WITH PLATING c b 0.11 ± 0.005 0.3 ± 0.025
+ 0.11 0.05 0.01 + 0.05 0.3 0.02
PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE M-290 LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT
EPOXY RESIN SOLDER PLATING COPPER 0.002g
Mark
1
S3
2
1 : Cathode 2 : Anode
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0.2 ± 0.05
Others parts begin by 1t
1T-1
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