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Part: 1T404A

Category:

Description: Variable Capacitance Diode

Company: Sony Electronics

Datasheet: Download 1T404A datasheet     File size : 110 kB

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Datasheet text preview:
1T404A
Variable Capacitance Diode For the availability of this product, please contact the sales office.
Description The 1T404A is a variable capacitance diode designed for electronic tuning of wide-band CATV tuners using a super-small-miniature flat package (SSVC). Features · Super-small-miniature flat package · Low series resistance 0.75 Max. (f = 470MHz) · Large capacitance ratio 11.5 Typ. (C2/C25) · Small leakage current 10nA Max. (VR = 28V) · Capacitance deviation in a matching group within 2% Applications Electronic tuning of wide-band CATV tuners Structure Silicon epitaxial planar type diode M-290

Absolute Maximum Ratings (Ta = 25°C) · Reverse voltage VR 34 · Operating temperature Topr ­20 to +75 · Storage temperature Tstg ­65 to +150

V °C °C

Electrical Characteristics Item Reverse voltage Reverse current Diode capacitance Symbol VR IR C2 C25 C2/C25 C25/C28 rs C CD = 14pF, f = 470MHz VR = 2 to 25V, f = 1MHz Conditions IR = 1µA VR = 28V VR = 2V, f = 1MHz VR = 25V, f = 1MHz 29.5 2.60 11.0 11.5 1.03 Min. 34.0

(Ta = 25°C) Typ. Max. Unit V 10.0 33.5 2.90 nA pF pF

Capacitance ratio Series resistance Capacitance deviation in a matching group

0.75 2.0

%

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

­1­

E99805-PS

1T404A

Diode capacitance vs. Reverse voltage
100 Ta = 25°C 50

Reverse current vs. Ambient temperature
VR = 28V

100

C ­ Diode capacitance [pF]

10

5

IR ­ Reverse current [pA]
1 2 5 10 20 50 100 VR ­ Reverse voltage [V]

20

10

2 1

1 ­20

0

20

40

60

80

Ta ­ Ambient temperature [°C]

Forward voltage vs. Ambient temperature
0.80 50

Reverse voltage vs. Ambient temperature
VR ­ Reverse voltage [V]
IR = 10µA 45

VF ­ Forward voltage [V]

IF = 1mA

0.70

0.60

40

0.50 ­20

0

20

40

60

80

35 ­20

0

20

40

60

80

Ta ­ Ambient temperature [°C]

Ta ­ Ambient temperature [°C]

­2­

1T404A

Diode capacitance vs. Ambient temperature
1.03 VR = 1V

C (Ta)/C (25°C) ­ Diode capacitance

1.02

VR = 2V

VR = 7V 1.01 VR = 25V VR = 15V 1.00

0.99

0.98 ­20

0

20

40

60

80

Ta ­ Ambient current [°C]

Reverse current vs. Reverse voltage
100 1000

Temperature coefficient of diode capacitance

Ta = 80°C

Temperature coefficient [ppm/°C]

500

Ta = 60°C

IR ­ Reverse current [pA]

10

200

100

Ta = 25°C 50 1 1 2 5 10 20 50 VR ­ Reverse voltage [V]

0.1 1 3 10 30 VR ­ Reverse voltage [V]

­3­

1T404A

Package Outline

Unit: mm
M-290

1.3 ± 0.1

A 1.7 ± 0.1

0.8 ± 0.1

0.2 M

A

10° MAX

b

c

10° MAX

0.7 ± 0.1

BASE METAL WITH PLATING c b 0.11 ± 0.005 0.3 ± 0.025
+ 0.11 ­ 0.05 0.01 + 0.05 0.3 ­ 0.02

PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE M-290 LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT

EPOXY RESIN SOLDER PLATING COPPER 0.002g

Marking

1

S4

2

1: Cathode 2: Anode

­4­

0.2 ± 0.05




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