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Part: 1T407
Category:
Description: Variable Capacitance Diode
Company: Sony Electronics
Datasheet: Download 1T407 datasheet File size : 110 kB
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1T407
Variable Capacitance Diode For the availability of this product, please contact the sales office.
Description T h e 1T407 is a variable capacitance diode designed for electronic tuning of wide-band CATV tuners using a super-small-miniature flat package (SSVC). Features · Super-small-miniature flat package · Low series resistance: 1.1 Max. (f=470 MHz) · Large capacitance ratio: 15.5 Typ. (C2/C25) 21.5 Min. (C1/C28) 1.03 Min. (C25/C28) · Small leakage current: 10 nA Max. (VR=28 V) · Capacitance deviation in a matching group: within 2 % Applications Electronic tuning of wide-band CATV tuners Structure Silicon epitaxial planar type diode M-290
Absolute Maximum Ratings (Ta=25 °C) · Reverse voltage VR 34 · Operating temperature Topr 20 to +75 · Storage temperature Tstg 65 to +150
V °C °C
Electrical Characteristics Item Reverse current Reverse voltage Diode capacitance Capacitance ratio Symbol IR VR C2 C25 C2/C25 C1/C28 C25/C/28 rs C Conditions VR=28 V IR=1 µA VR=2 V, f=1 MHz VR=25 V, f=1 MHz Min. Typ. Max. 10 34 42.86 2.56 14.5 21.5 1.03 50.96 2.99 15.5
(Ta=25 °C) Unit nA V pF pF
Series resistance Capacitance deviation in a matching group
CD=14 pF, f=470 MHz VR=1 to 28 V, f= MHz
1.1 2
%
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E95920-TE
1T407
Diode capacitance vs. Reverse voltage 100 Ta=25°C 50 100
Reverse current vs. Ambient temperature VR=28V
C-Diode capacitance (pF)
10 5
IR-Reverse current (pA)
1 2 5 10 20 VR-Reverse voltage (V) 50
20
10
2 1
1 20
0 20 40 60 Ta-Ambient temperature (°C)
80
Forward voltage vs. Ambient temperature 0.80 50
Reverse voltage vs. Ambient temperature
VF-Forward voltage (V)
0.70
VR-Reverse voltage (V)
IF=1mA
IR=10µ A 45
0.60
40
0.50 20
0
20 40 60 Ta-Ambient temperature (°C)
80
35 20
0
20 40 60 Ta-Ambient temperature (°C)
80
--2--
1T407
Diode capacitance vs. Ambient temperature 1.03 VR=1V
C (Ta)/C (25 °C)-Diode capacitance
1.02
VR=2V
1.01
VR=7V VR=25V VR=15V
1.00
0.99
0.98 20
0
20 40 60 Ta-Ambient temperature (°C)
80
Reverse current vs. Reverse voltage 100 1000
Temperature coefficient of diode capacitance
Temperature coefficient (ppm/°C)
Ta=80°C
500
Ta=60°C
IR-Reverse current (pA)
10
200
Ta=25°C
100
50 1 1 2 20 5 10 VR-Reverse voltage (V) 50
0.1 1 3 10 30 VR-Reverse voltage (V)
--3--
1T407
Package Outline
Unit : mm
M-290
1.3 ± 0.1
A 1.7 ± 0.1
0.8 ± 0.1
0 .2 M
A
10° MAX
b
c
10° MAX
0.7 ± 0.1
BASE METAL WITH PLATING c b 0.11 ± 0.005 0.3 ± 0.025
+ 0.11 0.05 0.01 + 0.05 0.3 0.02
PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE M-290 LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT
EPOXY RESIN SOLDER PLATING COPPER 0.002g
Mark
1
S7
2
1 : Cathode 2 : Anode
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0.2 ± 0.05
Others parts begin by 1t
1T-1
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