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Details, datasheet, quote on part number:1T409
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Datasheet text preview:
1T409
Variable Capacitance Diode For the availability of this product, please contact the sales office.
Description T h e 1T409 is a variable capacitance diode designed for UHF-band VCO using a super-smallminiature flat package (SSVC). Features · Super-small-miniature flat package · Low series resistance: 0.4 Max. (f=470 MHz) · Large capacitance ratio: 2.5 Typ. (C2/C10) · Small leakage current: 3 nA Max. (VR=15 V) Applications · UHF-band VCO · Local oscillator for cordless telephone · Local oscillator for cellular equipment Structure Silicon epitaxial planar type diode M-290
Absolute Maximum Ratings (Ta=25 °C) · Reverse voltage VR 15 · Operating temperature Topr 35 to +85 · Storage temperature Tstg 65 to +150
V °C °C
Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Series resistance Symbol IR C2 C10 C2/C10 rs Conditions VR=15 V VR=2 V, f=1 MHz VR=10 V, f=1 MHz VR=5V, f=470 MHz Min. Typ. Max. 3 15.96 6.46 2.5 0.3 0.4
(Ta=25 °C) Unit nA pF pF
14.26 5.46 2.2
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E96144A98-TE
1T409
Diode capacitance vs. Reverse voltage 100 Ta=25°C 50 10
Reverse current vs. Ambient temperature VR=15V
C-Diode capacitance (pF)
20 10 5
IR-Reverse current (pA)
1
2 1 1 2 5 10 20 VR-Reverse voltage (V) 50 0.1 20
0 20 40 60 Ta-Ambient temperature (°C)
80
Forward voltage vs. Ambient temperature 0.90 35
Reverse voltage vs. Ambient temperature
VR-Reverse voltage (V)
VF-Forward voltage (V)
IF=1mA 0.80
IR=10µA 30
0.70
25
0.60 20
0 20 40 60 Ta-Ambient temperature (°C)
80
20 20
0
20 40 60 Ta-Ambient temperature (°C)
80
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1T409
Diode capacitance vs. Ambient temperature 1.03 VR=1V
C (Ta)/C (25°C)-Diode capacitance
1.02 VR=2V
1.01
VR=7V VR=10V
1.00
0.99
0.98 20
0 20 40 60 Ta-Ambient temperature (°C)
80
Reverse current vs. Reverse voltage 100 1000
Temperature coefficient of diode capacitance
Temperature coefficient (ppm/°C)
500
Ta=80°C
IR-Reverse current (pA)
10
200
Ta=60°C
100
1
50 1
2
5 10 VR-Reverse voltage (V)
20
50
Ta=25°C
0.1 1 3 10 VR-Reverse voltage (V) 30
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1T409
Package Outline
Unit : mm
M - 90 2
1 3 1. }0.
A 1 7 1. }0.
0. } . 8 01
2 0. M
A
10 KM A X
b
c
10 KM A X
1 7 0. }0.
B A S E M E TA L W I H PLATI G T N c b 0. 1 }0. 05 1 0 0. }0. 25 3 0
0 0. 1 {0.05 1 |0. 1 0 0. {0. 5 3 |0. 2 0
P A C K A G E M A TE R I L A SO N Y C O D E EI J C O D E A JE D E C C O D E M - 90 2 LE A D TR E A TM E N T LE A D M A TE R I L A PAC KAG E W EI H T G
EPO XY R ESI N S O LD E R PLATI G N C O PPER 0. 02g 0
Mark
1
S9
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2
1 : Cathode 2 : Anode
0 2 0. }0. 5
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