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Part: 1T410
Category:
Description: Variable Capacitance Diode
Company: Sony Electronics
Datasheet: Download 1T410 datasheet File size : 110 kB
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1T410
Variable Capacitance Diode For the availability of this product, please contact the sales office.
Description T h e 1T410 is a variable capacitance diode designed for electronic tuning of BS/CS tuners using a super-small-miniature flat package (SSVC). Features · Super-small-miniature flat package · Low series resistance: 1.5 Max. (f=470 MHz) · Large capacitance ratio: 12.0 Typ. (C1/C25) · Small leakage current: 10 nA Max. (VR=25 V) · Capacitance deviation in a matching group: within 6 % Applications Electronic tuning of BS/CS tuners Structure Silicon epitaxial planar type diode M-290
Absolute Maximum Ratings (Ta=25 °C) · Reverse voltage VR 30 V · Peak reverse voltage VRM 35 V (RL 10 k) · Operating temperature Topr 20 to +75 °C · Storage temperature Tstg 65 to +150 °C
Electrical Characteristics Item Reverse current Reverse voltage Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol IR VR C1 C25 C1/C25 rs C Conditions VR=25 V IR=1 µA VR=1 V, f=1 MHz VR=25 V, f=1 MHz VR=5 V, f=470 MHz VR=1 to 25 V, f=1 MHz Min. Typ. Max. 10 30 5.96 0.46 10.0 7.16 0.60 12.0 1.30 1.50 6
(Ta=25 °C) Unit nA v pF pF %
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E96145A67-TE
1T410
Diode capacitance vs. Reverse voltage 10 5 Ta=25°C 100
Reverse current vs. Ambient temperature VR=28V
C-Diode capacitance (pF)
2 1 0.5 10
0.2 0.1 1 2 5 10 20 VR-Reverse voltage (V) 50
IR-Reverse current (pA)
1 0.1 20
0 20 40 60 Ta-Ambient temperature (°C)
80
Forward voltage vs. Ambient temperature 0.90 45 IF=1mA
Reverse voltage vs. Ambient temperature IR=10µA
VF-Forward voltage (V)
VR-Reverse voltage (V)
0 20 40 60 Ta-Ambient temperature (°C) 80
0.80
40
0.70
35
0.60 20
30 20
0
20 40 60 Ta-Ambient temperature (°C)
80
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1T410
Diode capacitance vs. Ambient temperature 1.03 VR=1V
C (Ta)/C (25°C)-Diode capacitance
1.02
VR=2V
VR=7V 1.01 VR=25V VR=15V
1.00
0.99
0.98 20
0
20 40 60 Ta-Ambient temperature (°C)
80
Reverse current vs. Reverse voltage 100 Ta=80°C 1000
Temperature coefficient of diode capacitance
Temperature coefficient (ppm/°C)
500
IR-Reverse current (pA)
10
200
Ta=60°C
100
1 Ta=25°C
50 1
2
5 10 VR-Reverse voltage (V)
20
50
0.1 1 3 10 VR-Reverse voltage (V) 30
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1T410
Package Outline
Unit : mm
M - 90 2
3 1. }0. 1
A 7 1. }0. 1
0. } . 1 80
2 0. M
A
10KM A X
b
c
10K A X M
7 0. }0. 1
B A S E M E TA L W I H PLATI G T N c b 0. 1}0. 005 1 0. }0. 025 3 0. 1{0. 05 1 |0. 01 0. {0. 05 3|0. 02
P A C K A G E M A TE R I L A SO N Y C O D E EI J C O D E A JE D E C C O D E M - 90 2 LE A D TR E A TM E N T LE A D M A TE R I L A PAC KAG E W EI H T G
EPO XY R ESI N S O LD E R PLATI G N C O PPER 0. 02g 0
Mark
1
X0
1 : Cathode
2
2 : Anode
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2 0. }0. 05
Others parts begin by 1t
1T-1
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