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Part: 1T411
Category:
Description: Variable Capacitance Diode
Company: Sony Electronics
Datasheet: Download 1T411 datasheet File size : 110 kB
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1T411
Variable Capacitance Diode For the availability of this product, please contact the sales office.
Description T h e 1T411 is a variable capacitance diode d e s i g n e d for analog cellular phone and it has a super miniature package. Features · Super miniature package · Small series resistance 0.40 Max. (f=470 MHz) · Large capacitance ratio 6.5 Typ. (C2/C25) · Capacitance deviation in a matching group 3 % (max.) Structure Silicon epitaxial planar-type diode M-235
Absolute Maximum Ratings (Ta=25 °C) · Reverse voltage VR 30 V · Peak reverse voltage VRM 35 V (RL10 k) · Operating temperature Topr 20 to +75 °C · Storage temperature Tstg 65 to +150 °C
Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol IR C2 C25 C2/C25 rs C Conditions VR=28 V VR=2 V, f=1 MHz VR=25 V, f=1 MHz f=1 MHz CD=14 pF, f=470 MHz VR=2 to 25 V, f=1 MHz Min. 26.37 4.030 Typ. 29.50 4.400 6.5 0.35 Max. 20 33.05 4.807 0.40 3
(Ta=25 °C) Unit nA pF pF %
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E95304B83-TE
1T411
Diode capacitance vs. Reverse voltage 100 1.000
Reverse current vs. Ambient temperature VR=28V
50
C-Diode capacitance (pF)
IR-Reverse current (nA)
Ta=25°C 20
0.100
10
5
0.010
2
1 1 2 5 10 VR-Reverse voltage (V) 20 50
0.001 20
0
20 40 60 Ta-Ambient temperature (°C)
80
Forward voltage vs. Ambient temperature 0.80 40
Reverse voltage vs. Ambient temperature
VF-Forward voltage (V)
0.70
VR-Reverse voltage (V)
IF=1mA
IR=10µA
35
0.60
30
0.50 20
0
20 40 60 Ta-Ambient temperature (°C)
80
25 20
0
20 40 60 Ta-Ambient temperature (°C)
80
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1T411
Diode capacitance vs. Ambient temperature 1.03 VR=1V
C (Ta) /C (25°C) -Diode capacitance
1.02
VR=2V
1.01
VR=7V VR=25V VR=15V
1.00
0.99
0.98 20
0
20 40 60 Ta-Ambient temperature (°C)
80
Thermal coefficient of diode capacitance (ppm/°C)
Reverse current vs. Reverse voltage 1.000
Thermal coefficient of diode capacitance 1000
500
IR-Reverse current (nA)
0.100
200
100
Ta=80°C 0.010
50 1 2 5 10 20 VR-Reverse voltage (V) 50
Ta=60°C Ta=25°C 0.001 1 2 5 10 20 VR-Reverse voltage (V) 50
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1T411
Package Outline
Unit : mm
M
+ 0.2 1.25 0.1 2
-235
0.9 ± 0.1 + 0.1 0.3 0.05 0.2
1.7 ± 0.1
1 + 0.1 0.3 0.05
2.5 ± 0.2
0 ± 0.05 + 0.1 0.11 0.06
0° to 10°
NOTE: Dimension "" does not include mold protrusion.
SONY CODE EIAJ CODE JEDEC CODE
M-235
PACKAGE WEIGHT
0.1g
Marking
CATHODE MARK
2
11 B
Notes 1) B:Lot No.(Year and Month of manufacture) Year;Last one digit Month;A,B,C(for Oct. to Dec.) 1 to 9(for Jan.to Sept.)
1
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Others parts begin by 1t
1T-1
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