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Details, datasheet, quote on part number:1T413
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Datasheet text preview:
1T413
Variable Capacitance Diode For the availability of this product, please contact the sales office.
Description T h e 1T413 is a variable capacitance diode designed for the digital cellular phone VCO using a super-small-miniature flat package (SSVC). Features · Super-small-miniature flat package · Low series resistance: 0.40 Max. (f=470 MHz) · Large capacitance ratio: 2.90 Typ. (C1/C4) · Small leakage current: 10 nA Max. (VR=15 V) Applications Digital cellular phone VCO Structure Silicon epitaxial planar type diode M-290
Absolute Maximum Ratings (Ta=25 °C) · Reverse voltage VR 15 · Operating temperature Topr 20 to +75 · Storage temperature Tstg 65 to +150
V °C °C
Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Series resistance Symbol IR C1 C4 C1/C4 rs Conditions VR=15 V VR=1 V, f=1 MHz VR=4 V, f=1 MHz VR=1 V, f=470 MHz Min. 15.0 5.1 2.5 Typ. Max. 10.0 17.5 6.1 0.40
(Ta=25 °C) Unit nA pF pF
2.9
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E99220-TE
1T413
Example of Representative Characteristics
Diode capacitance vs. Reverse voltage 100 50 C-Diode capacitance (pF) Ta=25°C
Reverse current vs. Ambient temperature
VR=15V
20 10 IR-Reverse current (pA) 0.1 0.2 0.5 1 2 5 10 VR-Reverse voltage (V) 10
5
2 1
1
0.1 20
0
20
40
60
80
Ta-Ambient temperature (°C)
Forward voltage vs. Ambient temperature 0.90 VR-Reverse voltage (V) VF-Forward voltage (V) IF=1mA 0.80 35
Reverse voltage vs. Ambient temperature IR=10µA
30
0.70
25
0.60 20
0
20
40
60
80
20 20
0
20
40
60
80
Ta-Ambient temperature (°C)
Ta-Ambient temperature (°C)
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1T413
Diode capacitance vs. Ambient temperature 1.03 C (Ta)/C (25°C)-Diode capacitance VR=1V VR=2V VR=3V Temperature coefficient (ppm/°C) 2000
Temperature coefficient of diode capacitance
1.02 VR=4V 1.01 VR=10V 1.00
1000
500
200
100
0.99
50 0.98 20 0 20 40 60 80 30 0.1 0.2 0.5 1.0 2.0 5.0 10.0 20.0
Ta-Ambient temperature (°C)
VR-Reverse voltage (V)
Reverse current vs. Reverse voltage 100 0.5
Series resistance vs. Reverse voltage
f=470MHz 0.4 Ta=80°C 10 Ta=60°C rs-Series resistance ()
0.3
IR-Reverse current (pA)
0.2
0.1
1
0.0
0.1
1 VR-Reverse voltage (V)
10
Ta=25°C
0.1
1
3
10
30
VR-Reverse voltage (V)
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1T413
Package Outline
Unit : mm
M-290
1.3 ± 0.1
A 1.7 ± 0.1
0.8 ± 0.1
0 .2 M
A
10° MAX
b
c
10° MAX
0.7 ± 0.1
BASE METAL WITH PLATING c b 0.11 ± 0.005 0.3 ± 0.025
+ 0.11 0.05 0.01 + 0.05 0.3 0.02
PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE M-290 LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT
EPOXY RESIN SOLDER PLATING COPPER 0.002g
Mark
1
X3
1 F athode C 2 F node A
2
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0.2 ± 0.05
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