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Details, datasheet, quote on part number: 2N3055
 
 
Part number2N3055
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionComplementary Silicon Power Transistors
CompanyST Microelectronics, Inc.
DatasheetDownload 2N3055 datasheet
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Specifications, Features, Applications

STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES

DESCRIPTION The is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is MJ2955.

Symbol Parameter NPN PNP V CBO V CER V CEO V EBO IB P tot T stg Tj Collector-Base Voltage = 0) Collector-Emitter Voltage 100 ) Collector-Emitter Voltage = 0) Emitter-Base Voltage = 0) Collector Current Base Current Total Dissipation o C Storage Temperature Max. Operating Junction Temperature Value to 200

ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified)

Symbol I CEX I CEO IEBO Parameter Collector Cut-off Current = -1.5V) Collector Cut-off Current = 0) Emitter Cut-off Current = 0) Test Conditions o C Min. Typ. Max. Unit mA V

V CEO(sus) Collector-Emitter Sustaining Voltage = 0) VCER(sus) Collector-Emitter Sustaining Voltage 100 ) VCE(sat) FE fT Is/b Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Transition frequency Second Breakdown Collector Current

Pulsed: Pulse duration = 300 Ás, duty cycle 1.5 % For PNP types voltage and current values are negative.




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MJ2955  


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