| Some Part number from the same manufacture ST Microelectronics, Inc. |
| 2N3773 High power NPN silicon transistor
General features
■ STMicroelectronics preferred salestype
Description
The device is a silicon planar NPN transistor
mounted in Jedec TO-3 metal case. It is intended
for |
| STD36NH02L General features
■ RDS(on) * Qg industry’s benchmark
■ Conduction losses reduced
■ Switching losses reduced
Description
This series of products utilizes the last advanced
design |
| STSJ60NH3LL General features
■ Optimal RDS(on) x Qg trade-off @ 4.5 V
■ Conduction losses reduced
■ Improved junction-case thermal resistance
■ Low threshold device
Description
This device |
| SMTYxxA Low forward voltage TVS: Transky™
Main applications
■ Power rail ESD transient over-voltages and
reverse voltages protection for 5 and 12 V
supplied IC’s
Description
The Transky is designed |
| TS4995 1.2W differential input/output audio power amplifier with selectable standby and 6db fixed gain
The TS4995 is an audio power amplifier capable
of delivering 1.2W of continuous RMS output
power into |
| DB-54003-470 The DB-54003-470 is a common source
N-Channel Enhancement-Mode Lateral Field
Effect RF power amplifer designed for UHF
Portable radio applications |
| DB-55008-500 RF POWER amplifier using 1 x PD55008 N-Channel enhancement-mode lateral MOSFETs |
| DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs |
| BUL704 High voltage fast-switching npn power transistor
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular |
| BUL805 High voltage fast-switching NPN Power Transistor
Description
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It |
| STP75NS04Z N-channel Clamped - 7mOhm - 80A - TO-220 Fully protected MESH Overlay III Power MOSFET
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay
process which is based |
| STS15N4LL N-channel 40V - 0.0042 Ohm - 15A - SO-8 STripFET Power MOSFET
This N-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronic unique “Single Feature Size™“
strip-based process |
| STB20NM60D N-channel 600V - 0.26 Ohm - 20A - D2PAK FDmesh Power MOSFET
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly |
| STG3P2M10N60B 1-Phase bridge rectifier + 3 phase inverter IGBT - SEMITOP2 module
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, |
| STG3P3M25N60 3 Phase inverter IGBT - SEMITOP3 module
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBT, |
| STGW40NC60WD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, |
| ST10F273Z4 16-bit MCU with 512 Kbyte Flash memory and 36 Kbyte RAM |
| ST10F276Z5 16-bit MCU with MAC unit, 832 Kbyte Flash memory and 68 Kbyte RAM |
| M69KM048AA 32 Mbit (2 Mb x16), 83MHz Clock Rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM
The M69KM048AA is a 32 Mbit (33,554,432 bit) PSRAM, organized as 2,097,152 Words by
16 bits. It uses a high-speed |
| M69KM096AA 64 Mbit (4 Mb x16), 83MHz Clock Rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM
The M69KM096AA is a 64 Mbit (67,108,864 bit) PSRAM, organized as 4,194,304 Words by
16 bits. It uses a high-speed |
| M58LR128GU The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
x16) non-volatile Flash memories, respectively. They will be referred to as M58LRxxxGU/L
in the rest of the document |
