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Details, datasheet, quote on part number: 2N3773
 
 
Part number2N3773
CategoryDiscrete => Transistors => Bipolar => General Purpose => NPN
DescriptionHigh power NPN silicon transistor
General features
■ STMicroelectronics preferred salestype
Description
The device is a silicon planar NPN transistor
mounted in Jedec TO-3 metal case. It is intended
for linear amplifiers and inductive switching
applications.
CompanyST Microelectronics, Inc.
DatasheetDownload 2N3773 datasheet
Request For QuoteFind where to buy 2N3773
 


 
Specifications, Features, Applications

Description

The device is a silicon planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for linear amplifiers and inductive switching applications.

Symbol VCEO VCEV VCBO VEBO IC ICM IB IBM Ptot Tstg

Parameter Collector-emitter voltage (IB = 0) Collector-emitter voltage (VBE = -1.5V) Collector-base voltage (IE = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 1ms) Total dissipation Tc 25°C Storage temperature Value to 200 Unit °C

Parameter Thermal resistance junction-case ____M__mMax Value 1.17 Unit °C/W

Parameter Collector cut-off current = -1.5V) Collector cut-off current (IB = 0) Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0)

Collector-emitter VCEV(sus) (1) sustaining voltage = -1.5V) Collector-emitter VCER(sus) (1) sustaining voltage = 100) VCE(sat) (1) VBE (1) hFE (1) Is/b Collector-emitter saturation voltage Base-emitter voltage DC current gain Second Breakdown Collector Current




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