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Details, datasheet, quote on part number: 2N3773
 
 
Part number2N3773
CategoryDiscrete => Transistors => Bipolar => General Purpose => NPN
DescriptionHigh power NPN silicon transistor
General features
■ STMicroelectronics preferred salestype
Description
The device is a silicon planar NPN transistor
mounted in Jedec TO-3 metal case. It is intended
for linear amplifiers and inductive switching
applications.
CompanyST Microelectronics, Inc.
DatasheetDownload 2N3773 datasheet
Request For QuoteFind where to buy 2N3773
PackagesTO-3
 


 
Specifications, Features, Applications

Description

The device is a silicon planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for linear amplifiers and inductive switching applications.

Symbol VCEO VCEV VCBO VEBO IC ICM IB IBM Ptot Tstg

Parameter Collector-emitter voltage (IB = 0) Collector-emitter voltage (VBE = -1.5V) Collector-base voltage (IE = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 1ms) Total dissipation Tc 25°C Storage temperature Value to 200 Unit °C

Parameter Thermal resistance junction-case ____M__mMax Value 1.17 Unit °C/W

Parameter Collector cut-off current = -1.5V) Collector cut-off current (IB = 0) Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0)

Collector-emitter VCEV(sus) (1) sustaining voltage = -1.5V) Collector-emitter VCER(sus) (1) sustaining voltage = 100) VCE(sat) (1) VBE (1) hFE (1) Is/b Collector-emitter saturation voltage Base-emitter voltage DC current gain Second Breakdown Collector Current




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