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Details, datasheet, quote on part number:2N5416
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Datasheet text preview:
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2N5415 2N5416
SILICON PNP TRANSISTORS
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s
STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS
DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CB O V CE O VEBO IC IB P tot P tot Tstg Parameter 2N5415 C o l l e c t o r- B a s e Voltage (I E = 0) C o l l e c t o r- E m i tt e r Voltage (I B = 0) E m i t te r- B a s e Voltage (I C = 0) C o l l e c t o r Current B a s e Current T o t a l Dissipation at T c 25 C T o t a l Dissipation at T a m b 50 o C S t o r a g e Temperature
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Value 2N5 416 -3 5 0 -3 0 0 -6 -1 -0.5 10 1 - 6 5 to 200 -200 -200 -4
U ni t V V V A A W W
o
C
December 2000
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2N5415 / 2N5416
THERMAL DATA
R t h j - c a se R t hj- amb T h e r m a l Resistance Junction-case T h e r m a l Resistance Junction-ambient Max Max 17.5 1 75
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol IC BO IC EO IEBO V C E R Pa ra m e te r C o l l e c t o r Cut-off C u r r e n t (I E = 0) C o l l e c t o r Cut-off C u r r e n t (I B = 0) E m i t t e r Cut-off Current ( I C = 0) C o l l e c t o r- E m i t te r S u s t a i n i n g Voltage T e s t Conditions f o r 2N5415 f o r 2N5416 V C E = -150 V f o r 2N5415 f o r 2N5416 I C = -50 mA I C = -10 mA for 2N5415 f o r 2N5416 I C = -50 mA I C = -50 mA I C = -50 mA for 2N5415 f o r 2N5416 I C = -5 mA I C = -10 mA IE = 0 I B = -5 mA V C E = -10 V V C E = -10 V 30 30 V C E = -10 V V C E = -10 V f = 1KHz f = 5MHz f = 1MHz 25 15 25 MHz pF 15 0 12 0 VE B = -4 V VE B = -6 V R BE = 50 for 2N5416 -350 VC B = -175 V VC B = -280 V Min. Typ. Ma x. -5 0 -5 0 -5 0 -2 0 -2 0 Unit µA µA µA µA µA V
V CE O ( s u s ) C o l l e c t o r- E m i t te r S u s t a i n i n g Voltage V C E(s at ) VBE hFE C o l l e c t o r- E m i t te r S a t u r a t io n Voltage B a s e - E m i tt e r Voltage D C Current Gain
-200 -300 -2 .5 -1 .5
V V V V
hfe fT CC BO
S m a l l Signal Current Gain T r a n s i t io n frequency C o l l e c t o r Base C a p a c it a n c e
V C B = -10 V
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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2N5415 / 2N5416
TO-39 MECHANICAL DATA
mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch
G I H
D
A
L
F
E
B
P008B
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2N5415 / 2N5416
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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