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Part: 2N5657
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: Silicon NPN Transistor
Company: ST Microelectronics, Inc.
Datasheet: Download 2N5657 datasheet File size : 85 kB
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Datasheet text preview:
®
2N5657
SILICON NPN TRANSISTOR
s
s
STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR
DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays.
3 2
1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VC BO VC EO VEBO IC I CM IB P tot Tstg Tj P a r am e t e r C ol l e ct o r - Ba s e Voltage (I E = 0) C ol l e ct o r - Em i t t e r Voltage (I B = 0) Em it t e r- B a s e Voltage (I C = 0) C ol l e ct o r Current C ol l e ct o r Peak Current Ba s e Current T ot a l Dissipation at T c 25 o C St o r a ge Temperature M a x. Operating Junction Temperature Value 375 350 6 0.5 1 0.25 20 - 65 to 150 150 U ni t V V V A A A W o C o C
December 2000
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2N5657
THERMAL DATA
R t h j - c a se T h e r m al Resistance Junction-case Max 6.25
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Sy m b o l IC BO I CE V IC EO P a r a m et e r C o l le c t o r Cut-off C u r re n t (I E = 0) C o l le c t o r Cut-off C u r re n t (V B E = -1.5V) T e s t Conditions V C E = 375 V V C E = 350 V V C E = 250 V V C E = 250 V VEB = 6 V I C = 1 mA I C = 100 mA L = 50 mH 350 350 1 2.5 10 1 25 30 15 5 20 10 25 MHz pF 250 Min. Typ. M a x. 0 . 01 0.1 1 0.1 0 . 01 Unit mA mA mA mA mA V V V V V V
T c = 100 o C
C o l le c t o r Cut-off C u r re n t (I B = 0) IEBO E m i t t er Cut-off Current ( I C = 0) V ( B R) C E O C o l le c t o r- E m i t te r B r e ak d o w n Voltage V CE O ( s u s ) C o l le c t o r- E m i t te r S u s t ai n i ng Voltage V C E ( s a t ) C o l le c t o r- E m i t te r S a t u ra t i on Voltage VBE h FE B a s e -E m i t t er Voltage D C Current Gain
hf e fT CC BO
S m a l l Signal Current Gain T r a n si t i on frequency C o l le c t o r Base C a p a c it a n c e
I C = 0.1 A I B = 10 mA I C = 0.25 A IB = 25 mA I C = 0.5 A I B = 0.1 A I C = 0.1 A V C E = 10 V I C = 50 mA V C E = 10 V I C = 0.1 A V C E = 10 V I C = 0.25 A VC E = 10 V I C = 0.5 A V C E = 10 V I C = 0.1 A V C E = 10 V f = 1KHz I C = 50 mA V C B = 10 V V C E = 10 V f =10MHz
f = 100KHz
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Derating Curve
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2N5657
DC Current Gain (NPN type) DC Current Gain (PNP type)
Collector Emitter Saturation Voltage (NPN type)
Collector Emitter Saturation Voltage (PNP type)
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2N5657
SOT-32 (TO-126) MECHANICAL DATA
mm MIN. A B b b1 C c1 D e e3 F G H 3 4.15 3.8 3.2 2.54 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 i nch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629
DIM.
H2 c1
0016114
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2N5657
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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