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Part: 2N6107
Category:
Discrete
-> Transistors
-> Bipolar
-> Switching
-> PNP
Description: Silicon PNP Switching Transistors
Company: ST Microelectronics, Inc.
Datasheet: Download 2N6107 datasheet File size : 175 kB
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Datasheet text preview:
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2N6107 2N6111
SILICON PNP SWITCHING TRANSISTORS
s
s
STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTORS
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APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic package. They are intended for a wide variety of medium power switching and linear applications.
1 2
3
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l V CB O V CE X V CE O VEBO IC IB P tot Tstg Tj P a r am e t e r 2N6107 C o l le c t o r- B a s e Voltage (I E = 0) C o l le c t o r- E m i t te r Voltage (R B E = 100 ) C o l le c t o r- E m i t te r Voltage (I B = 0) E m i t te r - B as e Voltage (I C = 0) C o l le c t o r Current B a s e Current T o t a l Dissipation at T c = 25 o C S t o ra g e Temperature M a x . Operating Junction Temperature 80 80 70 5 7 3 40 - 6 5 to 150 150 Va l u e 2 N 6 1 11 40 40 30 V V V V A A W
o o
U ni t
C C
For PNP devices voltage and current values are negative
February 2001
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2N6107/2N6111
THERMAL DATA
R t h j - c a se R t hj- amb T h e r m al Resistance Junction-case T h e r m al Resistance Junction-ambient Max Max 3.12 70
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Sy m b o l I CE X P a r a m et e r C o l le c t o r Cut-off C u r re n t (V B E = - 1.5V) for for TC for for T e s t Conditions 2N6107 2N6111 = 150 o C 2N6107 2N6111 V C E = 80 V V C E = 40 V V C E = 70 V V C E = 30 V V C E = 60 V V C E = 20 V Min. Typ. M a x. 0.1 0.1 2 2 1 1 1 Unit mA mA mA mA mA mA mA
IC EO IEBO
C o l le c t o r Cut-off C u r re n t (I B = 0) E m i t t er Cut-off Current ( I C = 0)
f o r 2N6107 f o r 2N6111 VEB = 5 V I C = 0.1 A f o r 2N6107 f o r 2N6111 I C = 0.1 A f o r 2N6107 f o r 2N6111 IC = 3 A IC = 2 A IC = 7 A IC = 3 A IC = 2 A IC = 7 A IC = 2 A IC = 3 A IC = 7 A I C = 0.5 A I C = 0.5 A V C B = 10 V I B = 0.3 A I B = 0.2 A I B = 3.0 A VCE = 4 V VCE = 4 V VCE = 4 V VCE = 4 V VCE = 4 V VCE = 4 V V CE = 4 V
V CE O ( s u s ) C o l le c t o r- e m i t te r S u s t ai n i ng Voltage V C E R( su s ) C o l le c t o r- e m i t te r S u s t ai n i ng Voltage ( I C = 0) V C E(s at ) C o l le c t o r- e m i t te r S a t u ra t i on Voltage B a s e -e m i t t er Voltage
70 30 R B E = 100 80 40 for 2N6107 for 2N6111 for 2N6107 for 2N6111 for 2N6107 for 2N6111 f = 50 KHz V CE = 4 V f = 1 MHz 30 30 2.3 20 4 250 1 1 3.5 1.5 1.5 3 150 150
V V V V V V V V V V
V BE(on)
h FE
D C Current Gain
hf e fT C cb o
S m a l l Signal Current Gain T r a n si t i on - F r eq u e n c y C o l le c t o r- b a s e C a p a c it a n c e
MHz pF
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. For PNP types voltage and current values are negative. For characteristic curves see the bd534 (PNP) series.
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2N6107/2N6111
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. M AX. 4.60 1.32 2.72 M IN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. M AX. 0.181 0.051 0.107
P011C
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2N6107/2N6111
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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