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Part: 2N6387
Category:
Discrete
-> Transistors
-> Bipolar
-> Darlington
-> NPN
Description: Silico NPN Power Darlington Transistor
Company: ST Microelectronics, Inc.
Datasheet: Download 2N6387 datasheet File size : 165 kB
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Datasheet text preview:
®
2N6388
SILICON NPN POWER DARLINGTON TRANSISTOR
s
s s s
STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is inteded for use in low and medium frequency power applications.
3 1 2
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 K
R2 Typ. = 160
ABSOLUTE MAXIMUM RATINGS
Symbol V CB O V CE V VC ER V CE O VEBO IC ICM IB P tot Tstg Tj Parameter C o l l e c t o r- B a s e Voltage (I B = 0) C o l l e c t o r- E m i tt e r Voltage (V B E = -1.5V) C o l l e c t o r- E m i tt e r Voltage (R B E 100) C o l l e c t o r- E m i tt e r Voltage (I B = 0) E m i t te r- B a s e Voltage (I C = 0) C o l l e c t o r Current C o l l e c t o r Peak Current B a s e Current T o t a l Dissipation at T c 25 o C S t o r a g e Temperature M a x . Operating Junction Temperature Value 80 80 80 80 5 10 15 0.25 65 - 6 5 to 150 150 U ni t V V V V V A A A W
o o
C C
August 2000
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2N6388
THERMAL DATA
R t h j - c a se T h e r m a l Resistance Junction-case Max 1 .9 2
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CE V IC EO IEBO Pa ra m e te r C o l l e c t o r Cut-off C u r r e n t (V B E = -1.5V) C o l l e c t o r Cut-off C u r r e n t (I B = 0) E m i t t e r Cut-off Current ( I C = 0) T e s t Conditions V C E = 80 V V C E = 80 V V C E = 80 V VEB = 5 V I C = 200 mA 80 T c = 125 o C Min. Typ. Ma x. 0.3 3 1 5 Unit mA mA mA mA V
V CE O ( s u s ) C o l l e c t o r- E m i t te r S u s t a i n i n g Voltage ( I B = 0) V C E R( su s ) C o l l e c t o r- E m i t te r S u s t a i n i n g Voltage V CE V ( su s ) C o l l e c t o r- E m i t te r S u s t a i n i n g Voltage V C E(s at ) VBE hFE hfe VF CC BO Is/b Es/b C o l l e c t o r- E m i t te r S a t u r a t io n Voltage B a s e - E m i tt e r Voltage D C Current Gain S m a l l Signal Current Gain P a r a l le l - d i o d e Forward Voltage C o l l e c t o r Base C a p a c it a n c e S e c o n d Breakdown C o l l e c t o r Current S e c o n d Breakdown Energy
I C = 200 mA I C = 200 mA IC = 5 A I C = 10 A IC = 5 A I C = 10 A IC = 5 A I C = 10 A IC = 1 A IC = 1 A I F = 10 A IE = 0
R B E = 100 V B E = -1.5V I B = 10 mA I B = 100 mA V CE = 3 V VCE = 3 V V CE = 3 V VCE = 3 V
80 80 2 3 2.8 4.5 1000 100 20 1000 4 200 00
V V V V V V
V C E = 10 V V C E = 10 V
f = 1MHz f = 1KHz
V pF A mJ
V C B = 10 V
f = 1MHz 2.6
20 0
V C E = 25 V L = 12 mH V B E = -1.5 V R B E = 100 IC = 4.5 A
120
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Pulsed: Pulse duration = 100ms non repetitive pulse.
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2N6388
Safe Operating Area DC Current Gain
Collector Emitter Saturation Voltage
DC Transconductance
Collector Emitter Saturation Voltage
Saturated Switching Characteristics
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2N6388
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. M AX. 4.60 1.32 2.72 M IN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. M AX. 0.181 0.051 0.107
P011C
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2N6388
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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